Patents by Inventor Kangwei Xia

Kangwei Xia has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for storing and acquiring information using fluorescence defects in wide bandgap materials
    Patent number: 12579998
    Abstract: A method for storing and acquiring information using fluorescence defects in wide bandgap materials, a device, an apparatus and a storage medium are provided, which are applied to a field of optical information storage technology. The method includes: determining a processing parameter group, where the processing parameter group is configured to store target information into wide bandgap materials, and the processing parameter group comprises at least one processing parameter; performing a processing at M storage addresses of the wide bandgap materials based on the processing parameter group, so that fluorescence defects matching the target information are generated at the M storage addresses, where M is a positive integer.
    Type: Grant
    Filed: September 25, 2023
    Date of Patent: March 17, 2026
    Assignee: University of Science and Technology of China
    Inventors: Jingyang Zhou, Kangwei Xia, Ya Wang, Jiangfeng Du
  • METHOD FOR STORING AND ACQUIRING INFORMATION USING FLUORESCENCE DEFECTS IN WIDE BANDGAP MATERIALS
    Publication number: 20260018188
    Abstract: A method for storing and acquiring information using fluorescence defects in wide bandgap materials, a device, an apparatus and a storage medium are provided, which are applied to a field of optical information storage technology. The method includes: determining a processing parameter group, where the processing parameter group is configured to store target information into wide bandgap materials, and the processing parameter group comprises at least one processing parameter; performing a processing at M storage addresses of the wide bandgap materials based on the processing parameter group, so that fluorescence defects matching the target information are generated at the M storage addresses, where M is a positive integer.
    Type: Application
    Filed: September 25, 2023
    Publication date: January 15, 2026
    Inventors: Jingyang ZHOU, Kangwei XIA, Ya WANG, Jiangfeng DU
  • Method for a photon induced material deposition and a device therefor
    Patent number: 11554541
    Abstract: A method for photon induced material deposition includes providing a first solution, which contains metallate or metal ions, providing a second solution, which contains light sensitive reducing agent, such as semiconductor nanoparticles, mixing the first solution and the second solution to form a reagent on a substrate, and focusing a light source on the reagent to form a mechanically rigid deposition in the focus of the light source.
    Type: Grant
    Filed: December 16, 2020
    Date of Patent: January 17, 2023
    Assignee: The Chinese University of Hong Kong
    Inventors: Sen Yang, Kangwei Xia, Siu Fai Hung, Yifan Chen
  • Method for a Photon Induced Material Deposition and a Device Therefor
    Publication number: 20210187828
    Abstract: A method for photon induced material deposition includes providing a first solution, which contains metallate or metal ions, providing a second solution, which contains light sensitive reducing agent, such as semiconductor nanoparticles, mixing the first solution and the second solution to form a reagent on a substrate, and focusing a light source on the reagent to form a mechanically rigid deposition in the focus of the light source.
    Type: Application
    Filed: December 16, 2020
    Publication date: June 24, 2021
    Inventors: Sen Yang, Kangwei Xia, Siu Fai Hung, Yifan Chen