Abstract: A magnetic memory device includes a magnetic element and a write circuit electrically connected to two nodes of the magnetic element and configured to provide a write current to the magnetic element, wherein the write current includes a first current having a first peak applied for a first time period and a second current having a second peak applied for a second time period, where the second peak is smaller than the first peak and the second period is longer than the first time period.

Abstract: A technology mapping method for a FPGA includes converting a gate level netlist into an AND-Inverter Graph (AIG) netlist, selecting a node among nodes included in the AIG netlist, generating a cut set including one or more cuts corresponding to the selected node, selecting a best cut by sorting the cuts included in the cut set according to predetermined criteria and outputting a LUT netlist including the best cut, wherein the predetermined criteria include a maximum difference of levels of sub-cuts connected in each cut as a first criterion.

Abstract: A technology mapping method for a FPGA includes converting a gate level netlist into an AND-Inverter Graph (AIG) netlist, selecting a node among nodes included in the AIG netlist, generating a cut set including one or more cuts corresponding to the selected node, selecting a best cut by sorting the cuts included in the cut set according to predetermined criteria and outputting a LUT netlist including the best cut, wherein the predetermined criteria include a maximum difference of levels of sub-cuts connected in each cut as a first criterion.

Abstract: A look up table (LUT) includes a decoder configured to decode input signals and to output decoded signals, a storage unit including a plurality of magnetic elements an being configured to select one or more of the plurality of magnetic elements in response to the decoded signals and a signal input/output (TO) unit configured to output an output signal corresponding to the selected one or more magnetic elements and to program the selected one or more magnetic elements by receiving a write signal.

Abstract: An operating method of a magnetic memory device may include: a first step of retrieving write data to be written to a plurality of magnetic memory cells sharing a bit line according to a write request, the write data including more of a first type of data than a second type of data; a second step of writing the first type of data simultaneously to all cells of the plurality of magnetic memory cells; and a third step of writing the second type of data to a portion of the plurality of magnetic memory cells, the second type of data being different from the first type of data.

Abstract: A look up table (LUT) includes a decoder configured to decode input signals and to output decoded signals, a storage unit including a plurality of magnetic elements an being configured to select one or more of the plurality of magnetic elements in response to the decoded signals and a signal input/output (TO) unit configured to output an output signal corresponding to the selected one or more magnetic elements and to program the selected one or more magnetic elements by receiving a write signal.

Abstract: A magnetic memory device includes a magnetic element and a write circuit electrically connected to two nodes of the magnetic element and configured to provide a write current to the magnetic element, wherein the write current includes a first current having a first peak applied for a first time period and a second current having a second peak applied for a second time period, where the second peak is smaller than the first peak and the second period is longer than the first time period.

Abstract: An operating method of a magnetic memory device may include: a first step of retrieving write data to be written to a plurality of magnetic memory cells sharing a bit line according to a write request, the write data including more of a first type of data than a second type of data; a second step of writing the first type of data simultaneously to all cells of the plurality of magnetic memory cells; and a third step of writing the second type of data to a portion of the plurality of magnetic memory cells, the second type of data being different from the first type of data.

Abstract: A magnetic memory device may include a bit line, a plurality of source lines, a plurality of normal cells coupled between the bit line and the plurality of source lines, and each including a magnetic resistance element and a switching element coupled in series to the magnetic resistance element and switched by a word line signal, a dummy cell coupled to the bit line, and a spin-hall effect material layer between the bit line and the magnetic resistance element. The magnetic resistance element may write data according to a first current that flows through the dummy cell and flows in a direction parallel to the magnetic resistance element, and a second current that flows through the magnetic resistance element.

Abstract: A magnetic memory device may include a bit line, a plurality of source lines, a plurality of normal cells coupled between the bit line and the plurality of source lines, and each including a magnetic resistance element and a switching element coupled in series to the magnetic resistance element and switched by a word line signal, a dummy cell coupled to the bit line, and a spin-hall effect material layer between the bit line and the magnetic resistance element. The magnetic resistance element may write data according to a first current that flows through the dummy cell and flows in a direction parallel to the magnetic resistance element, and a second current that flows through the magnetic resistance element.