Abstract: A current break circuit includes a current break control circuit suitable for sequentially outputting a first enable signal and a second enable signal with a time difference in response to at least one control signal, and a current break switch circuit suitable for outputting or blocking a second voltage in response to a first voltage, wherein the current break switch circuit forms a first current path in response to the first enable signal and a second current path in response to the second enable signal when blocking the second voltage.

Abstract: A semiconductor device includes a memory region suitable for providing a plurality of read data in parallel at every read operation cycle, an output path suitable for outputting the plurality of read data at a set time in response to an internal clock and one or more internal control signals at the every read operation cycle, and an output path control unit suitable for generating the internal control signal in response to a read command and generating the internal clock in response to a system clock, wherein a shifting time of a first edge of the internal clock is adjusted by a set level at the every read operation cycle during a test mode.

Abstract: A current break circuit includes a current break control circuit suitable for sequentially outputting a first enable signal and a second enable signal with a time difference in response to at least one control signal, and a current break switch circuit suitable for outputting or blocking a second voltage in response to a first voltage, wherein the current break switch circuit forms a first current path in response to the first enable signal and a second current path in response to the second enable signal when blocking the second voltage.

Abstract: A semiconductor device includes a memory region suitable for providing a plurality of read data in parallel at every read operation cycle, an output path suitable for outputting the plurality of read data at a set time in response to an internal clock and one or more internal control signals at the every read operation cycle, and an output path control unit suitable for generating the internal control signal in response to a read command and generating the internal clock in response to a system clock, wherein a shifting time of a first edge of the internal clock is adjusted by a set level at the every read operation cycle during a test mode.

Abstract: A semiconductor device includes a memory region suitable for providing a plurality of read data in parallel at every read operation cycle, an output path suitable for outputting the plurality of read data at a set time in response to an internal clock and one or more internal control signals at the every read operation cycle, and an output path control unit suitable for generating the internal control signal in response to a read command and generating the internal clock in response to a system clock, wherein a shifting time of a first edge of the internal clock is adjusted by a set level at the every read operation cycle during a test mode.

Abstract: An error detecting circuit of a semiconductor apparatus, comprising: a fail detecting section configured to receive 2-bit first test data signals outputted from a first block and 2-bit second test data signals outputted from a second block, disable a first fail detection signal when the 2-bit first test data signals have different levels, disable a second fail detection signal when the 2-bit second test data signals have different levels, and disable both the first and second fail detection signals when the 2-bit first test data signals have the same level, the 2-bit second test data signals have the same level, and levels of the 2-bit first test data signals and the 2-bit second test data signals are the same with each other.

Abstract: A memory device includes a first bank, a second bank, a plurality of interface pads, and a data output unit configured to output compressed data of the first bank through at least one interface pad among the plurality of interface pads and subsequently output compressed data of the second bank through the one interface pad.

Abstract: A semiconductor device includes a memory region suitable for providing a plurality of read data in parallel at every read operation cycle, an output path suitable for outputting the plurality of read data at a set time in response to an internal clock and one or more internal control signals at the every read operation cycle, and an output path control unit suitable for generating the internal control signal in response to a read command and generating the internal clock in response to a system clock, wherein a shifting time of a first edge of the internal clock is adjusted by a set level at the every read operation cycle during a test mode.

Abstract: A latch circuit may include a first inverting unit configured to drive a second node in response to a level of a first node, a second inverting unit configured to drive the first node in response to a level of the second node, an initialization unit configured to drive the first node at a first level in response to activation of an initialization signal, and a power breaker configured to break a supply of power of a second level to the second inverting unit when the initialization signal is activated.

Abstract: A latch circuit may include a first inverting unit configured to drive a second node in response to a level of a first node, a second inverting unit configured to drive the first node in response to a level of the second node, an initialization unit configured to drive the first node at a first level in response to activation of an initialization signal, and a power breaker configured to break a supply of power of a second level to the second inverting unit when the initialization signal is activated.

Abstract: A data output circuit includes a strobe signal controlling block configured to generate a first delayed strobe signal by delaying a first strobe signal by a certain delay amount, an input/output sense amplifying block configured to amplify first parallel data signals to generate second parallel data signals having the same number of bits as that of the first parallel data signals in response to the first strobe signal and the first delayed strobe signal, a storing block configured to latch the second parallel data signals in response to a second strobe signal and a second delayed strobe signal, and a parallel-to-serial converting block configured to sequentially output the second parallel data signals latched in the storing block, wherein the first strobe signal is used to generate a data signal that is outputted first among the second parallel data signals.

Abstract: A semiconductor memory apparatus may include a bonding pad; a control signal pad; and an operation mode signal generation unit configured to generate a plurality of operation mode signals in response to a bonding signal inputted through the bonding pad and a control signal inputted through the control signal pad.

Abstract: A data output circuit of a semiconductor memory device includes a pipe latch unit configured to store input parallel data and align the stored data in response to a plurality of alignment control signals to output serial output data, and an alignment control signal generating unit configured to generate the plurality of alignment control signals in response to a burst-type information and a seed address group, wherein the alignment control signal generating unit generates the alignment control signals to swap data in a swap mode where the burst-type is a certain type and bits of the seed address group are certain values.

Abstract: A memory device includes a first bank, a second bank, a plurality of interface pads, and a data output unit configured to output compressed data of the first bank through at least one interface pad among the plurality of interface pads and subsequently output compressed data of the second bank through the one interface pad.

Abstract: A synchronous semiconductor memory device includes a data alignment reference pulse generation unit configured to generate a data alignment reference pulse in response to a data strobe signal, a data alignment suspension signal generation unit configured to generate a data alignment suspension signal in response to the data alignment reference pulse, a data strobe termination signal, and a write pulse, and a data alignment unit configured to align input data in response to the data alignment reference pulse and stop aligning the input data in response to the data alignment suspension signal.

Abstract: A semiconductor memory apparatus may include a bonding pad; a control signal pad; and an operation mode signal generation unit configured to generate a plurality of operation mode signals in response to a bonding signal inputted through the bonding pad and a control signal inputted through the control signal pad.

Abstract: A semiconductor integrated circuit includes: a semiconductor substrate comprising a word line decoder region and a memory cell region; a basic word line formed in the memory cell region in a buried gate type; and an additional word line formed to extend from the word line decoder region across the memory cell region, wherein the additional word line is formed over the basic word line in parallel to the basic word line and is coupled to the basic word line through two or more vias.

Abstract: A synchronous semiconductor memory device includes a data alignment reference pulse generation unit configured to generate a data alignment reference pulse in response to a data strobe signal, a data alignment suspension signal generation unit configured to generate a data alignment suspension signal in response to the data alignment reference pulse, a data strobe termination signal, and a write pulse, and a data alignment unit configured to align input data in response to the data alignment reference pulse and stop aligning the input data in response to the data alignment suspension signal.

Abstract: A data output circuit includes a strobe signal controlling block configured to generate a first delayed strobe signal by delaying a first strobe signal by a certain delay amount, an input/output sense amplifying block configured to amplify first parallel data signals to generate second parallel data signals having the same number of bits as that of the first parallel data signals in response to the first strobe signal and the first delayed strobe signal, a storing block configured to latch the second parallel data signals in response to a second strobe signal and a second delayed strobe signal, and a parallel-to-serial converting block configured to sequentially output the second parallel data signals latched in the storing block, wherein the first strobe signal is used to generate a data signal that is outputted first among the second parallel data signals.

Abstract: A semiconductor device includes a delay locked loop including a replica delay unit which is configured to delay a signal reflecting a delay amount of an output path of a signal, and a delay time compensator configured to compensate for a difference of a delay time between the replica delay unit and the output path by comparing an output signal of the replica delay unit and an output signal of the output path.