Patents by Inventor Kanishka Biswas

Kanishka Biswas has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220263004
    Abstract: The present disclosure discloses a p-type material of Formula I: AgSb1-xCdxTe2, wherein x is in a range of 0.01-0.07. It further discloses a process of preparation of the p-type material, and the use of the p-type material as a thermoelectric material.
    Type: Application
    Filed: July 8, 2020
    Publication date: August 18, 2022
    Inventors: Kanishka BISWAS, Subhajit ROYCHOWDHURY, Tanmoy GHOSH
  • Patent number: 8778214
    Abstract: Composites comprising a continuous matrix formed from compounds having a rock salt structure (represented by the structure “MQ”) and inclusions comprising chalcogenide compounds having a rock salt structure (represented by the structure “AB”) are provided. Composites having the structure MQ-ABC2, where MQ represents a matrix material and ABC2 represents inclusions comprising a chalcogenide dispersed in the matrix material are also provided.
    Type: Grant
    Filed: September 15, 2010
    Date of Patent: July 15, 2014
    Assignee: Northwestern University
    Inventors: Mercouri G. Kanatzidis, Qichun Zhang, Steven N. Girard, Kanishka Biswas
  • Publication number: 20110073797
    Abstract: Composites comprising a continuous matrix formed from compounds having a rock salt structure (represented by the structure “MQ”) and inclusions comprising chalcogenide compounds having a rock salt structure (represented by the structure “AB”) are provided. Composites having the structure MQ-ABC2, where MQ represents a matrix material and ABC2 represents inclusions comprising a chalcogenide dispersed in the matrix material are also provided.
    Type: Application
    Filed: September 15, 2010
    Publication date: March 31, 2011
    Inventors: Mercouri G. Kanatzidis, Qichun Zhang, Steven N. Girard, Kanishka Biswas