Patents by Inventor Kanji Bando

Kanji Bando has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Gallium nitride based III-V group compound semiconductor device and method of producing the same
    Patent number: 7375383
    Abstract: A gallium nitride-based III-V Group compound semi-conductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.
    Type: Grant
    Filed: March 7, 2007
    Date of Patent: May 20, 2008
    Assignee: Nichia Corporation
    Inventors: Shuji Nakamura, Takao Yamada, Masayuki Senoh, Motokazu Yamada, Kanji Bando
  • Gallium nitride based III-V group compund semiconductor device and method of producing the same
    Publication number: 20070178689
    Abstract: A gallium nitride-based III-V Group compound semi-conductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.
    Type: Application
    Filed: March 7, 2007
    Publication date: August 2, 2007
    Applicant: Nichia Corporation
    Inventors: Shuji Nakamura, Takao Yamada, Masayuki Senoh, Motokazu Yamada, Kanji Bando
  • Gallium nitride based III-V group compound semiconductor device and method of producing the same
    Patent number: 7205220
    Abstract: A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.
    Type: Grant
    Filed: August 8, 2005
    Date of Patent: April 17, 2007
    Assignee: Nichia Corporation
    Inventors: Shuji Nakamura, Takao Yamada, Masayuki Senoh, Motokazu Yamada, Kanji Bando
  • Gallium nitride based III-V group compound semiconductor device and method of producing the same
    Patent number: 6998690
    Abstract: A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.
    Type: Grant
    Filed: July 1, 2003
    Date of Patent: February 14, 2006
    Assignee: Nichia Corporation
    Inventors: Shuji Nakamura, Takao Yamada, Masayuki Senoh, Motokazu Yamada, Kanji Bando
  • Gallium nitride based Ill-V group compound semiconductor device and method of producing the same
    Publication number: 20060006399
    Abstract: A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.
    Type: Application
    Filed: August 8, 2005
    Publication date: January 12, 2006
    Applicant: Nichia Corporation
    Inventors: Shuji Nakamura, Takao Yamada, Masayuki Senoh, Motokazu Yamada, Kanji Bando
  • Gallium nitride based III-V group compound semiconductor device and method of producing the same
    Publication number: 20040095977
    Abstract: A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.
    Type: Application
    Filed: July 1, 2003
    Publication date: May 20, 2004
    Applicant: Nichia Corporation
    Inventors: Shuji Nakamura, Takao Yamada, Masayuki Senoh, Motokazu Yamada, Kanji Bando
  • Gallium nitride-based III-V group compound semiconductor
    Patent number: 6610995
    Abstract: A gallium nitride-based III-V Group compound semi-conductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.
    Type: Grant
    Filed: November 13, 2002
    Date of Patent: August 26, 2003
    Assignee: Nichia Corporation
    Inventors: Shuji Nakamura, Takao Yamada, Masayuki Senoh, Motokazu Yamada, Kanji Bando
  • Gallium nitride-based III-V group compound semiconductor
    Publication number: 20030094620
    Abstract: A gallium nitride-based III-V Group compound semi-conductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.
    Type: Application
    Filed: November 13, 2002
    Publication date: May 22, 2003
    Applicant: Nichia Chemical Industries, Ltd.
    Inventors: Shuji Nakamura, Takao Yamada, Masayuki Senoh, Motokazu Yamada, Kanji Bando
  • Gallium nitride-based III-V group compound semiconductor
    Patent number: 6507041
    Abstract: A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.
    Type: Grant
    Filed: January 2, 2001
    Date of Patent: January 14, 2003
    Assignee: Nichia Chemical Industries, Ltd.
    Inventors: Shuji Nakamura, Takao Yamada, Masayuki Senoh, Motokazu Yamada, Kanji Bando
  • Gallium nitride-based III-V group compound semiconductor
    Publication number: 20010022367
    Abstract: A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.
    Type: Application
    Filed: January 2, 2001
    Publication date: September 20, 2001
    Applicant: Nichia Chemical Industries, Ltd.
    Inventors: Shuji Nakamura, Takao Yamada, Masayuki Senoh, Motokazu Yamada, Kanji Bando
  • Gallium nitride-based III-V group compound semiconductor device and method of producing the same
    Patent number: 6204512
    Abstract: A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.
    Type: Grant
    Filed: November 24, 1999
    Date of Patent: March 20, 2001
    Assignee: Nichia Chemical Industries, Ltd.
    Inventors: Shuji Nakamura, Takao Yamada, Masayuki Senoh, Motokazu Yamada, Kanji Bando
  • Gallium nitride-based III-V group compound semiconductor
    Patent number: 6093965
    Abstract: A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.
    Type: Grant
    Filed: December 11, 1998
    Date of Patent: July 25, 2000
    Assignee: Nichia Chemical Industries Ltd.
    Inventors: Shuji Nakamura, Takao Yamada, Masayuki Senoh, Motokazu Yamada, Kanji Bando
  • Gallium nitride-based III-V group compound semiconductor
    Patent number: 5877558
    Abstract: A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.
    Type: Grant
    Filed: December 19, 1997
    Date of Patent: March 2, 1999
    Assignee: Nichia Chemical Industries, Ltd.
    Inventors: Shuji Nakamura, Takao Yamada, Masayuki Senoh, Motokazu Yamada, Kanji Bando
  • Gallium nitride-based III-V group compound semiconductor
    Patent number: 5767581
    Abstract: A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.
    Type: Grant
    Filed: June 17, 1996
    Date of Patent: June 16, 1998
    Assignee: Nichia Chemical Industries, Ltd.
    Inventors: Shuji Nakamura, Takao Yamada, Masayuki Senoh, Motokazu Yamada, Kanji Bando
  • Gallium nitride-based III-V group compound semiconductor
    Patent number: 5652434
    Abstract: A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.
    Type: Grant
    Filed: June 17, 1996
    Date of Patent: July 29, 1997
    Assignee: Nichia Chemical Industries, Ltd.
    Inventors: Shuji Nakamura, Takao Yamada, Masayuki Senoh, Motokazu Yamada, Kanji Bando
  • Gallium nitride-based III-V group compound semiconductor device and method of producing the same
    Patent number: 5563422
    Abstract: A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.
    Type: Grant
    Filed: April 28, 1994
    Date of Patent: October 8, 1996
    Assignee: Nichia Chemical Industries, Ltd.
    Inventors: Shuji Nakamura, Takao Yamada, Masayuki Senoh, Motokazu Yamada, Kanji Bando