Patent number: 11309454
Abstract: A deep ultraviolet LED with a design wavelength ?, including a reflecting electrode layer (Au), a metal layer (Ni), a p-GaN contact layer, a p-block layer made of a p-AlGaN layer, an i-guide layer made of an AlN layer, a multi-quantum well layer, an n-AlGaN contact layer, a u-AlGaN layer, an AlN template, and a sapphire substrate that are arranged in this order from a side opposite to the sapphire substrate, in which the thickness of the p-block layer is 52 to 56 nm, a two-dimensional reflecting photonic crystal periodic structure having a plurality of voids is provided in a region from the interface between the metal layer and the p-GaN contact layer to a position not beyond the interface between the p-GaN contact layer and the p-block layer in the thickness direction of the p-GaN contact layer, the distance from an end face of each of the voids in the direction of the sapphire substrate to the interface between the multi-quantum well layer and the i-guide layer satisfies ?/2n1Deff (where ? is the design wav
Type:
Grant
Filed:
January 25, 2019
Date of Patent:
April 19, 2022
Assignees:
Marubun Corporation, Shibaura Machine Co., Ltd., RIKEN, ULVAC, Inc., Tokyo Ohka Kogyo Co., Ltd., Nippon Tungsten Co., Ltd., Dai Nippon Printing Co., Ltd., Dowa Holdings Co., Ltd.
Inventors:
Yukio Kashima, Eriko Matsuura, Mitsunori Kokubo, Takaharu Tashiro, Hideki Hirayama, Noritoshi Maeda, Masafumi Jo, Ryuichiro Kamimura, Yamato Osada, Kanji Furuta, Takeshi Iwai, Yohei Aoyama, Yasushi Iwaisako, Tsugumi Nagano, Yasuhiro Watanabe
