Abstract: Disclosed are surface-coated SiC whiskers, processes for preparing the same, a ceramic reinforced with the same, and a process for preparing said reinforced ceramic. The surface-coated SiC whiskers are SiC whiskers (I) having a surface coated with a thin carbonaceous layer having a thickness of 7 to 100 .ANG., or SiC whiskers (II) having a surface coated with an Si.sub.3 N.sub.4 layer. The SiC whiskers (I) can be prepared by dispersing SiC whiskers in a homogeneous solution of a thermosetting resin in an organic solvent, separating the whiskers by filtration and drying it, curing the thermosetting resin, and firing the cured thermosetting resin in a non-oxidizing atmosphere at 800.degree. to 1,600.degree. C. The SiC whiskers (II) can be prepared by the dispersing SiC whiskers in a solvent of an organosilicon polymer in an organic solvent, separating the whiskers by filtration and drying it, heating the whiskers coated with the organosilicon polymer in a nitriding atmosphere at 1,200.degree. to 1,600.degree.

Abstract: Disclosed are surface-coated SiC whiskers, proceses for preparing the same, a ceramic reinforced with the same, and a process for preparing said reinforced ceramic. The surface-coated SiC whiskers are SiC whiskers (I) having a surface coated with a thin carbonaceous layer having a thickness of 7 to 100 .ANG., or SiC whiskers (II) having a surface coated with an Si.sub.3 N.sub.4 layer. The SiC whiskers (I) can be prepared by dispersing SiC whiskers in a homogeneous solution of a thermosetting resin in an organic solvent, separating the whiskers by filtration and drying it, curing the thermosetting resin, and firing the cured thermosetting resin in a non-oxidizing atmoshpere at 800.degree. to 1,600.degree. C. The SiC whiskers (II) can be prepared by dispersing SiC whiskers in a solution of an organosilicon polymer in an organic solvent, separating the whiskers by filtration and drying it, heating the whiskers coated with the organosilicon polymer in a nitriding atmoshpere at 1,200.degree. to 1,600.degree. C.

Abstract: An overtemperature and overcurrent resistor fuse has a resistor body with finely divided conducting powder and silica powder dispersed in an organic flux and resin. The conducting powder has a melting temperature in the range from 60.degree.C to 350.degree. C. This overtemperature and overcurrent resistor fuse has a relatively low electrical resistance below a selected melting temperature and has an irreversible abrupt increase of electrical resistance above the selected melting temperature range caused by serious overload or overheating conditions.