Patents by Inventor Kankichi ITO

Kankichi ITO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9761711
    Abstract: A semiconductor device includes a first electrode, a second electrode, a first semiconductor region of a first conductivity type that is between the first electrode and the second electrode. A second semiconductor region is adjacent to the first semiconductor region along a first direction and includes a second conductivity type material. A first insulating region is provided within the second semiconductor region. A third electrode is provided on the first semiconductor region via a second insulating region.
    Type: Grant
    Filed: March 3, 2016
    Date of Patent: September 12, 2017
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kankichi Ito, Hideki Okumura
  • Publication number: 20170077298
    Abstract: A semiconductor device includes a first electrode, a second electrode, a first semiconductor region of a first conductivity type that is between the first electrode and the second electrode. A second semiconductor region is adjacent to the first semiconductor region along a first direction and includes a second conductivity type material. A first insulating region is provided within the second semiconductor region. A third electrode is provided on the first semiconductor region via a second insulating region.
    Type: Application
    Filed: March 3, 2016
    Publication date: March 16, 2017
    Inventors: Kankichi ITO, Hideki OKUMURA