Patents by Inventor Kannan RAMASUBRAMANIYAN

Kannan RAMASUBRAMANIYAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11739419
    Abstract: Improved thin film coatings, cutting tool materials and processes for cutting tool applications are disclosed. A boron-doped graded diamond thin film for forming a highly adhesive surface coating on a cemented carbide (WC—Co) cutting tool material is provided. The thin film is fabricated in a HFCVD reactor. It is made of a bottom layer of BMCD in contact with a surface layer of the cemented carbide, a top layer made of NCD and a transition layer with a decreasing concentration gradient of boron obtained by changing the reaction conditions through ramp up option in hot filament CVD reactor. The top layer has a low friction coefficient. The bottom layer in the coating substrate interface has better interfacial adhesion through cobalt and boron reactivity and decreased cobalt diffusivity in the diamond. The transition layer has minimized lattice mismatch and sharp stress concentration between the top and bottom layers.
    Type: Grant
    Filed: April 26, 2018
    Date of Patent: August 29, 2023
    Assignee: INDIAN INSTITUTE OF TECHNOLOGY MADRAS (IIT MADRAS)
    Inventors: Kannan Ramasubramaniyan, Narayanan Arunachalam, Ramachandra Rao
  • Publication number: 20200181764
    Abstract: Improved thin film coatings, cutting tool materials and processes for cutting tool applications are disclosed. A boron-doped graded diamond thin film for forming a highly adhesive surface coating on a cemented carbide (WC—Co) cutting tool material is provided. The thin film is fabricated in a HFCVD reactor. It is made of a bottom layer of BMCD in contact with a surface layer of the cemented carbide, a top layer made of NCD and a transition layer with a decreasing concentration gradient of boron obtained by changing the reaction conditions through ramp up option in hot filament CVD reactor. The top layer has a low friction coefficient. The bottom layer in the coating substrate interface has better interfacial adhesion through cobalt and boron reactivity and decreased cobalt diffusivity in the diamond. The transition layer has minimized lattice mismatch and sharp stress concentration between the top and bottom layers.
    Type: Application
    Filed: April 26, 2018
    Publication date: June 11, 2020
    Applicant: INDIAN INSTITUTE OF TECHNOLOGY MADRAS (IIT MADRAS)
    Inventors: Kannan RAMASUBRAMANIYAN, Narayanan ARUNACHALAM, Ramachandra RAO