Abstract: A MEMS sensor for detecting electromagnetic waves in a particular frequency range is provided. In a preferred embodiment, the MEMS sensor comprises a bottom substrate layer; a first electrode layer over the substrate layer; a pyroelectric layer over the first electrode layer; and a second electrode layer over the pyroelectric layer; wherein a top electrode layer is patterned with a periodic structure that has a periodicity less than or equal to target infrared wavelength.

Abstract: A MEMS sensor for detecting electromagnetic waves in a particular frequency range is provided. In a preferred embodiment, the MEMS sensor comprises a bottom substrate layer; a first electrode layer over the substrate layer; a pyroelectric layer over the first electrode layer; and a second electrode layer over the pyroelectric layer; wherein a top electrode layer is patterned with a periodic structure that has a periodicity less than or equal to target infrared wavelength.

Abstract: A piezoelectric actuator that includes a fixed electrode in a base substrate, a dielectric layer on the surface of the base substrate, a lower electrode that is at least partially separated from the base substrate, a piezoelectric layer on the surface of the lower electrode, and an upper electrode on the side of the surface of the piezoelectric layer. At least a portion of the upper electrode or the lower electrode serves as a movable electrode, which can be moved by distortion of the piezoelectric layer caused by application of a piezoelectric drive voltage.

Abstract: Provided is a method for producing a piezoelectric thin-film element including a piezoelectric thin-film layer having good surface morphology and high crystallinity. The method includes forming a lower electrode layer on a substrate; forming a piezoelectric thin-film buffer layer on the lower electrode layer at a relatively low film-formation temperature; forming a piezoelectric thin-film layer on the piezoelectric thin-film buffer layer at a film-formation temperature that is higher than the film-formation temperature for the piezoelectric thin-film buffer layer; and forming an upper electrode layer on the piezoelectric thin-film layer.

Abstract: A piezoelectric actuator that includes a fixed electrode in a base substrate, a dielectric layer on the surface of the base substrate, a lower electrode that is at least partially separated from the base substrate, a piezoelectric layer on the surface of the lower electrode, and an upper electrode on the side of the surface of the piezoelectric layer. At least a portion of the upper electrode or the lower electrode serves as a movable electrode, which can be moved by distortion of the piezoelectric layer caused by application of a piezoelectric drive voltage.

Abstract: An acoustic wave sensor having significantly increased sensitivity and excellent sensing reproducibility and stability includes a piezoelectric substrate, an acoustic wave element including an electrode disposed on the piezoelectric substrate, and a reactive membrane which overlies the acoustic wave element and which is reduced in mass by direct or indirect chemical reaction with a measured substance. The measured substance is detected such that a change in mass applied to the acoustic wave element from the reactive membrane is detected by a change in frequency.

Abstract: A Lamb wave device includes a base substrate, a piezoelectric thin film which is provided on the base substrate and which has a floating portion floating above the base substrate, the floating portion having a first surface facing the base substrate and a second surface opposite to the first surface, and an IDT electrode disposed on at least one of the first and the second surfaces of the piezoelectric thin film. The piezoelectric thin film is made of LiTaO3 or LiNbO3, and the c-axis of the piezoelectric thin film is set in approximately the same direction as that of a line substantially perpendicular to the first and the second surfaces of the piezoelectric thin film, and the crystal structure of the piezoelectric thin film is a rotation twin crystal having the c-axis functioning as the rotation axis.

Abstract: A Lamb wave device includes a base substrate, a piezoelectric thin film which is provided on the base substrate and which has a floating portion floating above the base substrate, the floating portion having a first surface facing the base substrate and a second surface opposite to the first surface, and an IDT electrode disposed on at least one of the first and the second surfaces of the piezoelectric thin film. The piezoelectric thin film is made of LiTaO3 or LiNbO3, and the c-axis of the piezoelectric thin film is set in approximately the same direction as that of a line substantially perpendicular to the first and the second surfaces of the piezoelectric thin film, and the crystal structure of the piezoelectric thin film is a rotation twin crystal having the c-axis functioning as the rotation axis.