Abstract: A light-emitting element having a long lifetime is provided. A light-emitting element exhibiting high emission efficiency in a high luminance region is provided. A light-emitting element includes a light-emitting layer between a pair of electrodes. The light-emitting layer contains a first organic compound, a second organic compound, and a phosphorescent compound. The first organic compound is represented by a general formula (G0). The molecular weight of the first organic compound is greater than or equal to 500 and less than or equal to 2000. The second organic compound is a compound having an electron-transport property. In the general formula (G0), Ar1 and Ar2 each independently represent a fluorenyl group, a spirofluorenyl group, or a biphenyl group, and Ar3 represents a substituent including a carbazole skeleton.

Abstract: A light-emitting element with a lower voltage and higher emission efficiency is provided. The light-emitting element includes a first organic compound, a second organic compound, and a guest material. The LUMO level of the first organic compound is lower than the LUMO level of the second organic compound, and a difference between them is larger than 0 eV and smaller than or equal to 0.5 eV. Furthermore, the HOMO level of the first organic compound is lower than the HOMO level of the second organic compound. The guest material has a function of converting triplet excitation energy into light emission. The first organic compound and the second organic compound form an exciplex.

Abstract: A light-emitting element having a long lifetime is provided. A light-emitting element exhibiting high emission efficiency in a high luminance region is provided. A light-emitting element includes a light-emitting layer between a pair of electrodes. The light-emitting layer contains a first organic compound, a second organic compound, and a phosphorescent compound. The first organic compound is represented by a general formula (G0). The molecular weight of the first organic compound is greater than or equal to 500 and less than or equal to 2000. The second organic compound is a compound having an electron-transport property. In the general formula (G0), Ar1 and Ar2 each independently represent a fluorenyl group, a spirofluorenyl group, or a biphenyl group, and Ar3 represents a substituent including a carbazole skeleton.

Abstract: A novel organic compound having a high hole-transport property is provided. A long-lifetime light-emitting element is provided. An organic compound represented by General Formula (G0) is provided. In General Formula (G0), Ar1 represents a substituted or unsubstituted naphthyl group, Ar2 represents a substituted or unsubstituted carbazolyl group, Ar3 represents a substituted or unsubstituted fluorenyl group or a substituted or unsubstituted spirofluorenyl group, and ?1 and ?2 each independently represent a substituted or unsubstituted phenylene group or a substituted or unsubstituted biphenyldiyl group.

Abstract: A novel organic compound having a high hole-transport property is provided. A long-lifetime light-emitting element is provided. An organic compound represented by General Formula (G0) is provided. In General Formula (G0), Ar1 represents a substituted or unsubstituted naphthyl group, Ar2 represents a substituted or unsubstituted carbazolyl group, Ar3 represents a substituted or unsubstituted fluorenyl group or a substituted or unsubstituted spirofluorenyl group, and ?1 and ?2 each independently represent a substituted or unsubstituted phenylene group or a substituted or unsubstituted biphenyldiyl group.

Abstract: A light-emitting element having a long lifetime is provided. A light-emitting element exhibiting high emission efficiency in a high luminance region is provided. A light-emitting element includes a light-emitting layer between a pair of electrodes. The light-emitting layer contains a first organic compound, a second organic compound, and a phosphorescent compound. The first organic compound is represented by a general formula (G0). The molecular weight of the first organic compound is greater than or equal to 500 and less than or equal to 2000. The second organic compound is a compound having an electron-transport property. In the general formula (G0), Ar1 and Ar2 each independently represent a fluorenyl group, a spirofluorenyl group, or a biphenyl group, and Ar3 represents a substituent including a carbazole skeleton.

Abstract: Provided is a method for manufacturing a semiconductor device, in which a degradation of characteristics of a thin film transistor can be suppressed by performing plasma oxidation treatment on a gate insulating film containing nitrogen. An embodiment of the present invention is a method for manufacturing a semiconductor device comprising a thin film transistor including a gate electrode, a gate insulating film containing nitrogen, and a channel region in microcrystalline semiconductor films. The method includes the steps of performing plasma treatment on the gate insulating film in an oxidizing gas atmosphere containing hydrogen and an oxidizing gas containing an oxygen atom, and forming the microcrystalline semiconductor film over the gate insulating film. Formula (1), a/b?2, and Formula (2), b>0, are satisfied, where the amount of hydrogen and the amount of the oxidizing gas in the oxidizing gas atmosphere are a and b, respectively.

Abstract: Provided is a method for manufacturing a semiconductor device, in which a degradation of characteristics of a thin film transistor can be suppressed by performing plasma oxidation treatment on a gate insulating film containing nitrogen. An embodiment of the present invention is a method for manufacturing a semiconductor device comprising a thin film transistor including a gate electrode, a gate insulating film containing nitrogen, and a channel region in microcrystalline semiconductor films. The method includes the steps of performing plasma treatment on the gate insulating film in an oxidizing gas atmosphere containing hydrogen and an oxidizing gas containing an oxygen atom, and forming the microcrystalline semiconductor film over the gate insulating film. Formula (1), a/b?2, and Formula (2), b>0, are satisfied, where the amount of hydrogen and the amount of the oxidizing gas in the oxidizing gas atmosphere are a and b, respectively.

Abstract: A novel organic compound having a high hole-transport property is provided. A long-lifetime light-emitting element is provided. An organic compound represented by General Formula (G0) is provided. In General Formula (G0), Ar1 represents a substituted or unsubstituted naphthyl group, Ar2 represents a substituted or unsubstituted carbazolyl group, Ar3 represents a substituted or unsubstituted fluorenyl group or a substituted or unsubstituted spirofluorenyl group, and ?1 and ?2 each independently represent a substituted or unsubstituted phenylene group or a substituted or unsubstituted biphenyldiyl group.

Abstract: A light-emitting element having a long lifetime is provided. A light-emitting element exhibiting high emission efficiency in a high luminance region is provided. A light-emitting element includes a light-emitting layer between a pair of electrodes. The light-emitting layer contains a first organic compound, a second organic compound, and a phosphorescent compound. The first organic compound is represented by a general formula (G0). The molecular weight of the first organic compound is greater than or equal to 500 and less than or equal to 2000. The second organic compound is a compound having an electron-transport property. In the general formula (G0), Ar1 and Ar2 each independently represent a fluorenyl group, a spirofluorenyl group, or a biphenyl group, and Ar3 represents a substituent including a carbazole skeleton.

Abstract: Provided is a method for manufacturing a semiconductor device, in which a degradation of characteristics of a thin film transistor can be suppressed by performing plasma oxidation treatment on a gate insulating film containing nitrogen. An embodiment of the present invention is a method for manufacturing a semiconductor device comprising a thin film transistor including a gate electrode, a gate insulating film containing nitrogen, and a channel region in microcrystalline semiconductor films. The method includes the steps of performing plasma treatment on the gate insulating film in an oxidizing gas atmosphere containing hydrogen and an oxidizing gas containing an oxygen atom, and forming the microcrystalline semiconductor film over the gate insulating film. Formula (1), a/b?2, and Formula (2), b>0, are satisfied, where the amount of hydrogen and the amount of the oxidizing gas in the oxidizing gas atmosphere are a and b, respectively.