Abstract: A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a substrate and a first gate electrode disposed on the substrate and located in a first region of the semiconductor device. The semiconductor device also includes a first sidewall structure covering the first gate electrode. The semiconductor device further includes a protective layer disposed between the first gate electrode and the first sidewall structure. In addition, the semiconductor device includes a second gate electrode disposed on the substrate and located in a second region of the semiconductor device. The semiconductor device also includes a second sidewall structure covering a lateral surface of the second gate electrode.

Abstract: The invention is to provide a method that reconstructs enhanced-resolution images with improved super-resolution algorithms, which is based on an iterative method and employs our suggested initial interpolation, robust image registration, automatic image selection, and further image enhancement post-processing. According to the method of the invention, the reconstruction of enhanced-resolution image can be quickly achieved not only by low-resolution image sequences associated with a moving object but also by low-resolution image sequences associated with a stationary scene.