Patents by Inventor Kao-Hua Tsai

Kao-Hua Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and method of manufacturing the same
    Patent number: 11950424
    Abstract: A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a substrate and a first gate electrode disposed on the substrate and located in a first region of the semiconductor device. The semiconductor device also includes a first sidewall structure covering the first gate electrode. The semiconductor device further includes a protective layer disposed between the first gate electrode and the first sidewall structure. In addition, the semiconductor device includes a second gate electrode disposed on the substrate and located in a second region of the semiconductor device. The semiconductor device also includes a second sidewall structure covering a lateral surface of the second gate electrode.
    Type: Grant
    Filed: June 7, 2021
    Date of Patent: April 2, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Yu-Ting Tsai, Ching-Tzer Weng, Tsung-Hua Yang, Kao-Chao Lin, Chi-Wei Ho, Chia-Ta Hsieh
  • Method of making a flexible optoelectronic device having inverted electrode structure
    Patent number: 8574940
    Abstract: A flexible optoelectronic device having inverted electrode structure is disclosed. The flexible optoelectronic device having inverted electrode structure includes a flexible plastic substrate having a cathode structure, an n-type oxide semiconductor layer, an organic layer, and an anode. The n-type oxide semiconductor layer is disposed on the cathode structure. The organic layer is disposed on the n-type oxide semiconductor layer. The anode is electrically connected with the organic layer.
    Type: Grant
    Filed: January 17, 2013
    Date of Patent: November 5, 2013
    Assignee: National Taiwan University
    Inventors: Ching-Fuh Lin, Kao-Hua Tsai
  • Flexible optoelectronic device having inverted electrode structure and method for making the same
    Patent number: 8378337
    Abstract: A flexible optoelectronic device having inverted electrode structure is disclosed. The flexible optoelectronic device having inverted electrode structure includes a flexible plastic substrate having a cathode structure, an n-type oxide semiconductor layer, an organic layer, and an anode. The n-type oxide semiconductor layer is disposed on the cathode structure. The organic layer is disposed on the n-type oxide semiconductor layer. The anode is electrically connected with the organic layer.
    Type: Grant
    Filed: November 4, 2009
    Date of Patent: February 19, 2013
    Assignee: National Taiwan University
    Inventors: Ching-Fuh Lin, Kao-Hua Tsai
  • Flexible Optoelectronic Device Having Inverted Electrode Structure and Method for Making the same
    Publication number: 20110037055
    Abstract: A flexible optoelectronic device having inverted electrode structure is disclosed. The flexible optoelectronic device having inverted electrode structure includes a flexible plastic substrate having a cathode structure, an n-type oxide semiconductor layer, an organic layer, and an anode. The n-type oxide semiconductor layer is disposed on the cathode structure. The organic layer is disposed on the n-type oxide semiconductor layer. The anode is electrically connected with the organic layer.
    Type: Application
    Filed: November 4, 2009
    Publication date: February 17, 2011
    Applicant: NATIONAL TAIWAN UNIVERSITY
    Inventors: CHING-FUH LIN, KAO-HUA TSAI