Abstract: A proximity sensor includes a light source, an optical sensing element, and an integration circuit. The light source is turned on and off several times during a measurement time interval. When the light source is turned on and off, the optical sensing element senses the surrounding light to generate a first current and a second current, respectively. The integration circuit integrates the first current and the second current to generate a first integration signal and a second integration signal respectively for determining whether an object is approaching. When the light source is turned on, the present second integration signal is stored, and a stored first integration signal is used as a starting value to integrate the first current. When the light source is turned off, the present first integration signal is stored, and the stored second integration signal is used as a starting value to integrate the second current.

Abstract: A high-sensitivity light sensor includes a light sensing element, a first integrator, a comparator, and a second integrator. The light sensing element senses a light during a measurement time interval to generate a current. The first integrator integrates the current to generate a first integration signal. The comparator compares the first integration signal with a threshold value. While the first integration signal is greater than the threshold value, the comparison signal is at a first level. The second integrator is coupled to the first integrator and integrates the first integration signal to generate a second integration signal. The light sensor of the present invention uses two integrators to integrate the sensed voltage twice. Therefore, the light sensor of the present invention has a higher sensitivity.

Abstract: A proximity sensor includes a light source, an optical sensing element, and an integration circuit. The light source is turned on and off several times during a measurement time interval. When the light source is turned on and off, the optical sensing element senses the surrounding light to generate a first current and a second current, respectively. The integration circuit integrates the first current and the second current to generate a first integration signal and a second integration signal respectively for determining whether an object is approaching. When the light source is turned on, the present second integration signal is stored, and a stored first integration signal is used as a starting value to integrate the first current. When the light source is turned off, the present first integration signal is stored, and the stored second integration signal is used as a starting value to integrate the second current.

Abstract: A high-sensitivity light sensor includes a light sensing element, a first integrator, a comparator, and a second integrator. The light sensing element senses a light during a measurement time interval to generate a current. The first integrator integrates the current to generate a first integration signal. The comparator compares the first integration signal with a threshold value. While the first integration signal is greater than the threshold value, the comparison signal is at a first level. The second integrator is coupled to the first integrator and integrates the first integration signal to generate a second integration signal. The light sensor of the present invention uses two integrators to integrate the sensed voltage twice. Therefore, the light sensor of the present invention has a higher sensitivity.

Abstract: An optical sensing device includes a first sensor, a second sensor, a third sensor and a fourth sensor for sensing light to generate a first sensing signal, a second sensing signal, a third sensing signal and a fourth sensing signal, respectively. A spectrum of a coating of the first sensor includes a first peak of a X spectrum. A spectrum of a coating of the second sensor includes a second peak of the X spectrum. A spectrum of a coating of the third sensor includes a Y spectrum. A spectrum of a coating of the fourth sensor includes a Z spectrum. The first sensing signal and the second sensing signal are used to determine a X output value. The third sensing signal and the fourth sensing signal are used to determine a Y output value and a Z output value, respectively.

Abstract: A sunk-type package structure includes a substrate, an optical sensing chip, and a housing. The substrate has a cavity with a first depth. The optical sensing chip is disposed inside the cavity and electrically connected with the substrate. A surface of the optical sensing chip has a first sensing area for sensing light. The housing covers the substrate and the optical sensing chip. The housing has a light-permeable portion disposed above the first sensing area.

Abstract: An electronic device includes an OLED display having a plurality of pixels and an ambient light sensor disposed under a first pixel of the plurality of pixels. In a first sensing interval, the ambient light sensor generates a first sensing value. The first sensing interval includes a first period and a second period. The first pixel has a first brightness in the first period and has a second brightness the second period. In a second sensing interval, which has the same time length as the first sensing interval, the ambient light sensor generates a second sensing value. The first pixel has the second brightness in the second sensing interval. The first pixel has an identical hue in the first sensing interval and the second sensing interval. The ambient light sensor acquires an ambient light intensity according to the first sensing value and the second sensing value.

Abstract: A light sensor includes a light sensing element, a first integrator and a sigma-delta analog-to-digital converter. The light sensing element senses light during a measurement period to generate a first current. The first integrator is coupled to the light sensing element and configured to receive the first current and generates a first integration signal. The sigma-delta analog-to-digital converter is coupled to the first integrator and used to convert the first integration signal to a sensing value.

Abstract: An optical sensing module has a light source and an optical sensing integrated circuit device. The optical sensing integrated circuit device has an optical sensor and a grating. The optical sensor and the light source are arranged along a first direction. The grating is formed over the optical sensor and has multiple parallel wires. The multiple wires are perpendicular to the first direction.

Abstract: A display device comprises an organic light emitting diode (OLED) display panel, an upper linear polarizer, and an ambient light sensor. The upper linear polarizer is disposed over the OLED display panel. The ambient light sensor is disposed beneath the OLED display panel. The ambient light sensor includes a substrate, a first sensing element, a second sensing element, a first lower linear polarizer, and a second lower linear polarizer. The first sensing element senses light to generate a first sensing value. The first lower linear polarizer is disposed between the OLED display panel and the first sensing element. The second sensing element senses light to generate a second sensing value. The second lower linear polarizer is disposed between the OLED display panel and the second sensing element. The first sensing value and the second sensing value are used to calculate an ambient light intensity.

Abstract: An electronic device includes: a OLED display including a first display area, wherein a saturation of the first display area remains constant in a first period; a display driver for driving the OLED display and changing a brightness coefficient of the first display area from a first brightness coefficient to a second brightness coefficient during the first period; an ambient light sensor under the first display area for sensing light, wherein during the first period, the ambient light sensor generates a first sensing value when the brightness coefficient of the first display area is the first brightness coefficient and generates a second sensing value when the brightness coefficient of the first display area is the second brightness coefficient; and a controller for calculating an ambient light intensity according to the first brightness coefficient, the second brightness coefficient, the first sensing value and the second sensing value.

Abstract: An electronic device includes an OLED display having a plurality of pixels and an ambient light sensor disposed under a first pixel of the plurality of pixels. In a first sensing interval, the ambient light sensor generates a first sensing value. The first sensing interval includes a first period and a second period. The first pixel has a first brightness in the first period and has a second brightness the second period. In a second sensing interval, which has the same time length as the first sensing interval, the ambient light sensor generates a second sensing value. The first pixel has the second brightness in the second sensing interval. The first pixel has an identical hue in the first sensing interval and the second sensing interval. The ambient light sensor acquires an ambient light intensity according to the first sensing value and the second sensing value.

Abstract: A light sensor includes a light sensing element, a first integrator and a sigma-delta analog-to-digital converter. The light sensing element senses light during a measurement period to generate a first current. The first integrator is coupled to the light sensing element and configured to receive the first current and generates a first integration signal. The sigma-delta analog-to-digital converter is coupled to the first integrator and used to convert the first integration signal to a sensing value.

Abstract: An electronic device includes: a OLED display including a first display area, wherein a saturation of the first display area remains constant in a first period; a display driver for driving the OLED display and changing a brightness coefficient of the first display area from a first brightness coefficient to a second brightness coefficient during the first period; an ambient light sensor under the first display area for sensing light, wherein during the first period, the ambient light sensor generates a first sensing value when the brightness coefficient of the first display area is the first brightness coefficient and generates a second sensing value when the brightness coefficient of the first display area is the second brightness coefficient; and a controller for calculating an ambient light intensity according to the first brightness coefficient, the second brightness coefficient, the first sensing value and the second sensing value.

Abstract: A complementary metal-oxide-semiconductor depth sensor element having a photogate formed in a photosensitive area on a substrate. A first transfer gate and a second transfer gate are formed respectively on two sides of the photogate in intervals. A first floating doped area and a second floating doped area are formed respectively on the outer sides of the first transfer gate and the second transfer gate. A semiconductor area is formed on the substrate. A lightly doped region is formed on the semiconductor area. The photogate, the first and second transfer gates and the first and second floating doped area are commonly formed on the lightly doped region. With the lightly doped region, the linear performance that the majority carriers move in the photogate is also affected to achieve the purpose for increasing the reaction rate.

Abstract: A method for determining non-contact gesture is applied to a device for the same. The device has an image sensor to detect an image sensing data, an inertial measurement sensor to detect an inertial sensing data, and a processor to determine if an object data is detected and to determine if an inertial event is occurred. The image sensing data in the same and/or adjacent image frame with the inertial events are excluded so that the image sensing data used to determine the gesture are those not influenced by the inertial events. Therefore, the accuracy of determining the gesture is enhanced.

Abstract: A complementary metal-oxide-semiconductor depth sensor element having a photogate formed in a photosensitive area on a substrate. A first transfer gate and a second transfer gate are formed respectively on two sides of the photogate in intervals. A first floating doped area and a second floating doped area are formed respectively on the outer sides of the first transfer gate and the second transfer gate. A semiconductor area is formed on the substrate. A lightly doped region is formed on the semiconductor area. The photogate, the first and second transfer gates and the first and second floating doped area are commonly formed on the lightly doped region. With the lightly doped region, the linear performance that the majority carriers move in the photogate is also affected to achieve the purpose for increasing the reaction rate.

Abstract: An optical sensing module has a light source and an optical sensing integrated circuit device. The optical sensing integrated circuit device has an optical sensor and a grating. The optical sensor and the light source are arranged along a first direction. The grating is formed over the optical sensor and has multiple parallel wires. The multiple wires are perpendicular to the first direction.

Abstract: A method for sensing depth of an object in three-dimensional space a Time-Of-Flight Sensing procedure and a Proximity-Sensing procedure are respectively operated in the same one period of time. The obtained information of the two procedures are manipulated to acquire the depth information of the measured object. With the result of the Time-Of-Flight Sensing procedure having high accuracy and the result of the Proximity-Sensing procedure having high resolution, the acquired depth information of the measured object is more precise.

Abstract: A complementary metal-oxide-semiconductor depth sensor element comprises a photogate formed in a photosensitive area on a substrate. A first transfer gate and a second transfer gate are formed respectively on two sides of the photogate in intervals. A first floating doped area and a second floating doped area are formed respectively on the outer sides of the first transfer gate and the second transfer gate. The first and second floating doped regions have dopants of a first polarity and the semiconductor area has dopants of a second polarity opposite to the first polarity. Since the photogate and at least parts of the first and second transfer gates connect to the same semiconductor area and no other dopants of polarity opposite to the second polarity. Therefore, the majority carriers from the photogate excited by lights drift, but not diffuse, to transfer to the first and second transfer gates.