Abstract: A photoresist composition is disclosed which is a mixture of a photoactive compound and an alkali soluble resin binder comprises of an unsaturated dicarboxylic acid esterified polymeric material, such as a phenolic resin containing a plurality of acid esterifiable groups esterified with an unsaturated dicarboxylic acid anhydride having the formula ##STR1## wherein R.sub.1 and R.sub.2 are independently selected from hydrogen and alkyl groups containing 1 to 3 carbon atoms, R.sub.3 and R.sub.4 are alkylene groups containing 1 to 3 carbon atoms and x and y are either 0 or 1.

Abstract: The dissolution rate in alkaline developer solutions of image-wise exposed photoresist systems based on diazoquinone sensitized polyamic acid is reduced to prepare relief images of fine line resolution by reducing the acidity of the polyamic acid prior to exposure.

Abstract: An image is provided by depositing a first layer of a photoresist containing a phenolic-formaldehyde novolak type polymer and an imidazole, benzimidazole, triazole, or indazoles to increase the solubility of the layer in aqueous alkaline developer after exposure to imaging radiation; depositing on the first layer a second layer of a photoresist containing a phenolic-formaldehyde novolak type polymer; the second layer having a lower degree of solubility in aqueous alkaline developer after exposure to imaging radiation; exposing the layers to imaging radiation; and developing the layers.

Abstract: The dissolution rate in alkaline developer solutions of image-wise exposed photoresist systems based on diazoquinone sensitized polyamic acid is reduced to prepare relief images of fine line resolution by reducing the acidity of the polyamic acid prior to exposure.

Abstract: The present invention is concerned with methods of converting a single resist layer into a multilayered resist.The upper portion of the single resist layer can be converted into a dry-etch resistant form. The conversion can be a blanket conversion of the upper portion of the resist layer or can be a patterned conversion of areas within the upper portion of the layer. A patternwise-converted resist can be oxygen plasma developed.The upper portion of the single resist layer can be patternwise converted into a chemically different composition or structure having altered absorptivity toward radiation. The difference in radiation absorptivity within the patterned upper portion of the resist enables subsequent use of blanket irradiation of the resist surface to create differences in chemical solubility between areas having the altered absorptivity toward radiation and non-altered areas. The difference in chemical solubility enables wet development of the patterned resist.

Abstract: A method is provided for creation of oxygen etch-resistant polymeric films for use in the production of micron and submicron dimension patterns and fine lines. These etch-resistant polymeric films find use in fabrication of complex structures such as those in electronic devices and magnetic thin film heads. The etch resistance is achieved by incorporation of a protective-oxide-forming metal into a polymeric material using preferential permeation of organometallic materials into the polymeric material.