Abstract: An organic electroluminescence (EL) element including: an anode; a first functional layer above the anode, the first functional layer having at least one of a hole injection property and a hole transport property; a light-emitting layer above the first functional layer, the light-emitting layer including an organic light-emitting material doped with an electron donor material; a second functional layer above the light-emitting layer, the second functional layer having at least one of an electron injection property and an electron transport property; and a cathode disposed above the second functional layer, wherein carrier density of the light-emitting layer is from 1012/cm3 to 1019/cm3.

Abstract: An organic electroluminescence (EL) element including: an anode; a first functional layer above the anode, the first functional layer having at least one of a hole injection property and a hole transport property; a light-emitting layer above the first functional layer, the light-emitting layer including an organic light-emitting material doped with an electron donor material; a second functional layer above the light-emitting layer, the second functional layer having at least one of an electron injection property and an electron transport property; and a cathode disposed above the second functional layer, wherein carrier density of the light-emitting layer is from 1012/cm3 to 1019/cm3.

Abstract: A method of manufacturing an organic light-emitting element is provided. A first layer is formed above a substrate, and exhibits hole injection properties. A bank material layer is formed above the first layer using a bank material. Banks are formed by patterning the bank material layer, and forming a resin film on a surface of the first layer by attaching a portion of the bank material layer to the first layer. The banks define apertures corresponding to light-emitters. The resin material is the same as the bank material. A functional layer is formed by applying ink to the apertures that contacts the resin film. The ink contains an organic material. The functional layer includes an organic light-emitting layer. A second layer is formed above the functional layer and exhibits electron injection properties. The hole injection properties of the first layer are degraded by applying electrical power to an element structure.

Abstract: The present invention is to provide an organic EL panel that is able to prevent the problems resulting from the unnecessary bank residues at a relatively low cost and has excellent light-emitting characteristics and a long life, and manufacturing method of the organic EL panel. Specifically, an organic EL element is obtained by forming organic EL elements by sequentially laminating an anode, a transparent conductive film, a hole-injection layer, a buffer layer, an organic light-emitting layer, a cathode, and a passivation layer on one surface of a substrate. Each bank residue positioned on the surface of the hole-injection layer has a diameter not greater than 0.2 ?m in one direction when the substrate is seen in plan view. Preferably, when the substrate is seen in plan view, the area of each bank residue is set to be not greater than 0.4 ?m2, or more preferably not greater than 0.04 ?m2.

Abstract: An organic EL display panel offering improved luminance includes: a substrate; pixel electrodes arranged in rows and columns; an insulating film coating the confronting edges of pixel electrodes adjacent in a column direction; banks each elongated in the column direction over a gap between pixel electrodes adjacent in the row direction; a hole transport layer in a gap between the banks; an organic light-emitting layer over the hole transport layer; and a common electrode over the organic light-emitting layer. Light is emitted from a first light-emitting portion and second light-emitting portions of the light-emitting layer. The first light-emitting portion is a portion above the pixel electrodes excluding where the insulating film is disposed. The second light-emitting portions are portions above both the pixel electrodes and the insulating film.

Abstract: An organic light-emitting element having a substrate, an anode on the substrate, a bank layer on or above the substrate that has an opening above the anode, a hole transport layer in the opening that contains organic material, an organic light-emitting layer on the hole transport layer that contains organic light-emitting material, and a cathode above the organic light-emitting layer. A portion of the hole transport layer is located between a periphery of the organic light-emitting layer and a side surface of the bank layer facing the opening. Carrier mobility of the hole transport layer is 1.0×10?3(cm2/Vs) or less.

Abstract: A method of manufacturing an organic light-emitting element. A first layer is formed above a substrate, and exhibits hole injection properties. A bank material layer is formed above the first layer using a bank material. Banks are formed by patterning the bank material layer, and forming a resin film on a surface of the first layer by attaching a portion of the bank material layer to the first layer, the banks defining apertures corresponding to light-emitters, the resin material being the same as the bank material. A functional layer is formed by applying ink to the apertures that contacts the resin film. The ink contains an organic material. The functional layer includes an organic light-emitting layer. A second layer is formed above the functional layer and exhibits electron injection properties. The hole injection properties of the first layer are then degraded by applying electrical power to an element structure.

Abstract: A method of manufacturing an organic light-emitting element is provided. A first layer is formed above a substrate, and exhibits hole injection properties. A bank material layer is formed above the first layer using a bank material. Banks are formed by patterning the bank material layer, and forming a resin film on a surface of the first layer by attaching a portion of the bank material layer to the first layer. The banks define apertures corresponding to light-emitters. The resin material is the same as the bank material. A functional layer is formed by applying ink to the apertures that contacts the resin film. The ink contains an organic material. The functional layer includes an organic light-emitting layer. A second layer is formed above the functional layer and exhibits electron injection properties. The hole injection properties of the first layer are degraded by applying electrical power to an element structure.

Abstract: The present invention is to provide an organic EL panel that is able to prevent the problems resulting from the unnecessary bank residues at a relatively low cost and has excellent light-emitting characteristics and a long life, and manufacturing method of the organic EL panel. Specifically, an organic EL element is obtained by forming organic EL elements by sequentially laminating an anode, a transparent conductive film, a hole-injection layer, a buffer layer, an organic light-emitting layer, a cathode, and a passivation layer on one surface of a substrate. Each bank residue positioned on the surface of the hole-injection layer has a diameter not greater than 0.2 ?m in one direction when the substrate is seen in plan view. Preferably, when the substrate is seen in plan view, the area of each bank residue is set to be not greater than 0.4 ?m2, or more preferably not greater than 0.04 ?m2.

Abstract: An organic EL display panel offering improved luminance includes: a substrate; pixel electrodes arranged in rows and columns; an insulating film coating the confronting edges of pixel electrodes adjacent in a column direction; banks each elongated in the column direction over a gap between pixel electrodes adjacent in the row direction; a hole transport layer in a gap between the banks; an organic light-emitting layer over the hole transport layer; and a common electrode over the organic light-emitting layer. Light is emitted from a first light-emitting portion and second light-emitting portions of the light-emitting layer. The first light-emitting portion is a portion above the pixel electrodes excluding where the insulating film is disposed. The second light-emitting portions are portions above both the pixel electrodes and the insulating film.

Abstract: A semiconductor device includes a first-type internal stress film formed of a silicon oxide film over source/drain regions of an nMISFET and a second-type internal stress film formed of a TEOS film over source/drain regions of a pMISFET. In a channel region of the nMISFET, a tensile stress is generated in the direction of movement of electrons due to the first-type internal stress film, so that the mobility of electrons is increased. In a channel region of the pMISFET, a compressive stress is generated in the direction of movement of holes due to the second-type internal stress film, so that the mobility of holes is increased.

Abstract: A semiconductor device includes a first-type internal stress film formed of a silicon oxide film over source/drain regions of an nMISFET and a second-type internal stress film formed of a TEOS film over source/drain regions of a pMISFET. In a channel region of the nMISFET, a tensile stress is generated in the direction of movement of electrons due to the first-type internal stress film, so that the mobility of electrons is increased. In a channel region of the pMISFET, a compressive stress is generated in the direction of movement of holes due to the second-type internal stress film, so that the mobility of holes is increased.

Abstract: A semiconductor device includes a first-type internal stress film formed of a silicon oxide film over source/drain regions of an nMISFET and a second-type internal stress film formed of a TEOS film over source/drain regions of a pMISFET. In a channel region of the nMISFET, a tensile stress is generated in the direction of movement of electrons due to the first-type internal stress film, so that the mobility of electrons is increased. In a channel region of the pMISFET, a compressive stress is generated in the direction of movement of holes due to the second-type internal stress film, so that the mobility of holes is increased.

Abstract: A method of manufacturing an organic light-emitting element. A first layer is formed above a substrate, and exhibits hole injection properties. A bank material layer is formed above the first layer using a bank material. Banks are formed by patterning the bank material layer, and forming a resin film on a surface of the first layer by attaching a portion of the bank material layer to the first layer, the banks defining apertures corresponding to light-emitters, the resin material being the same as the bank material. A functional layer is formed by applying ink to the apertures that contacts the resin film. The ink contains an organic material. The functional layer includes an organic light-emitting layer. A second layer is formed above the functional layer and exhibits electron injection properties. The hole injection properties of the first layer are then degraded by applying electrical power to an element structure.

Abstract: A semiconductor device includes a first-type internal stress film formed of a silicon oxide film over source/drain regions of an nMISFET and a second-type internal stress film formed of a TEOS film over source/drain regions of a pMISFET. In a channel region of the nMISFET, a tensile stress is generated in the direction of movement of electrons due to the first-type internal stress film, so that the mobility of electrons is increased. In a channel region of the pMISFET, a compressive stress is generated in the direction of movement of holes due to the second-type internal stress film, so that the mobility of holes is increased.

Abstract: A semiconductor device includes a first-type internal stress film formed of a silicon oxide film over source/drain regions of an nMISFET and a second-type internal stress film formed of a TEOS film over source/drain regions of a pMISFET. In a channel region of the nMISFET, a tensile stress is generated in the direction of movement of electrons due to the first-type internal stress film, so that the mobility of electrons is increased. In a channel region of the pMISFET, a compressive stress is generated in the direction of movement of holes due to the second-type internal stress film, so that the mobility of holes is increased.

Abstract: A light-emitting device includes a first electrode, a second electrode, a light-emitting layer between the first electrode and the second electrode, and banks that delimit the light-emitting layer. An upper surface of the light-emitting layer has a pair of sloping portions that each slope upward toward a lateral surface of one of the banks. The light-emitting layer is thicker about a lower boundary position than at a center of the light-emitting layer. The boundary position corresponds to an intersection of a lower surface of the light-emitting layer and the lateral surface of one of the banks. A width of each sloping portion is at least approximately 2 ?m and at most approximately 10% of a width of the light-emitting layer. Thus, it is possible to obtain a light-emitting device having a long life and having less variation in the luminance and an organic EL display apparatus having such a light-emitting device.

Abstract: A semiconductor device includes a first-type internal stress film formed of a silicon oxide film over source/drain regions of an nMISFET and a second-type internal stress film formed of a TEOS film over source/drain regions of a pMISFET. In a channel region of the nMISFET, a tensile stress is generated in the direction of movement of electrons due to the first-type internal stress film, so that the mobility of electrons is increased. In a channel region of the pMISFET, a compressive stress is generated in the direction of movement of holes due to the second-type internal stress film, so that the mobility of holes is increased.

Abstract: A semiconductor device includes a first-type internal stress film formed of a silicon oxide film over source/drain regions of an nMISFET and a second-type internal stress film formed of a TEOS film over source/drain regions of a pMISFET. In a channel region of the nMISFET, a tensile stress is generated in the direction of movement of electrons due to the first-type internal stress film, so that the mobility of electrons is increased. In a channel region of the pMISFET, a compressive stress is generated in the direction of movement of holes due to the second-type internal stress film, so that the mobility of holes is increased.

Abstract: A semiconductor device includes a first-type internal stress film formed of a silicon oxide film over source/drain regions of an nMISFET and a second-type internal stress film formed of a TEOS film over source/drain regions of a pMISFET. In a channel region of the NMISFET, a tensile stress is generated in the direction of movement of electrons due to the first-type internal stress film, so that the mobility of electrons is increased. In a channel region of the pMISFET, a compressive stress is generated in the direction of movement of holes due to the second-type internal stress film, so that the mobility of holes is increased.