Abstract: According to one embodiment, a material feeder includes a feeding unit. The feeding unit includes a container that is containable of a powdery material and a first wall that is provided with a plurality of first openings communicated with the container and at least partially covers a region to which the material is fed, the feeding unit feeding the material in the container from the first openings to the region to form a layer of the material.

Abstract: According to an embodiment, a bush includes a first member, a second member, and a third member. The first member is provided with a first hole having a first axis, and has a first outer surface having a second axis different from the first axis. The second member is provided with a second hole in which the first member is housed, and has a second inner surface that is in contact with the first outer surface and a second outer surface having a third axis different from the second axis. The third member is provided with a third hole in which the second member is housed and has a third inner surface that is in contact with the second outer surface.

Abstract: According to one embodiment, a gas supply pipe has a first gas pipe configured to blow a gas which has flowed from an inflow opening via first gas blow holes arranged along a longitudinal direction, and a second gas pipe provided in parallel with the first gas pipe. The second gas pipe has second gas blow holes arranged along the longitudinal direction, and allows the gas to flow in a direction opposite to the first gas pipe.

Abstract: According to one embodiment, a film forming apparatus includes a process chamber, a placement portion, a susceptor, a cover, a gas source, a heater, and a support portion. The placement portion is provided inside the process chamber. The susceptor is held in an end portion of the placement portion and is capable of placing a substrate. The cover is capable of being placed facing the susceptor inside the process chamber. The gas source is capable of supplying a process gas between the cover and the substrate. The heater is capable of heating the substrate. The support portion is provided inside the process chamber and is capable of supporting the cover at a first position above the susceptor and is capable of separating the cover at a second position which is different from the first position.

Abstract: A substrate treatment apparatus according to an embodiment includes a treatment part, a cyclic path, a heater, and a first injector. The treatment part is supplied with an etchant containing phosphoric acid and a silica deposition suppressor, and brings a substrate having a silicon nitride film on a surface thereof into contact with the etchant to remove the silicon nitride film from the substrate. The cyclic path circulates the etchant in the treatment part. The heater heats the etchant. The first injector is provided on the cyclic path, and injects the silica deposition suppressor into the etchant.

Abstract: A nozzle includes a body. The body includes a supply port to which a liquid is supplied, a vent from which the liquid is discharged downward, and a flow channel that extends between the supply port and the vent. The flow channel includes: a storage including a first part through which the liquid flows downward to the vent, and a second part provided downstream of the first part, through which the liquid flows upward to the vent; and an exhaust capable of exhausting a gas upstream of the second part while the liquid is not discharged from the vent and is stored in the storage. The storage includes a third part connecting the first part and the second part. The exhaust includes a bypass channel that leads to parts upstream and downstream of the third part in the flow channel.

Abstract: According to an embodiment, a high-rigidity plate includes: a first protrusion including a first top wall configured to support a vibration member and a first circumferential wall connected with an outer circumferential edge of the first top wall, the first protrusion being configured to protrude inside a housing or outside the housing; an intermediate part disposed at a position surrounding the first top wail when viewed along a first direction and connected with the first circumferential wall via a first bend; and an annular second protrusion including a second top wall disposed at a position surrounding the first top wall when viewed along the first direction and a second circumferential wall connected with the intermediate part via a second bend and connected with an inner circumferential edge of the second top wall, the second protrusion being configured to protrude inside the housing or outside the housing.

Abstract: According to an embodiment, a bush includes a first member, a second member, and a third member. The first member is provided with a first hole having a first axis, and has a first outer surface having a second axis different from the first axis. The second member is provided with a second hole in which the first member is housed, and has a second inner surface that is in contact with the first outer surface and a second outer surface having a third axis different from the second axis. The third member is provided with a third hole in which the second member is housed and has a third inner surface that is in contact with the second outer surface.

Abstract: According to one embodiment, a film forming apparatus includes a process chamber, a placement portion, a susceptor, a cover, a gas source, a heater, and a support portion. The placement portion is provided inside the process chamber. The susceptor is held in an end portion of the placement portion and is capable of placing a substrate. The cover is capable of being placed facing the susceptor inside the process chamber. The gas source is capable of supplying a process gas between the cover and the substrate. The heater is capable of heating the substrate. The support portion is provided inside the process chamber and is capable of supporting the cover at a first position above the susceptor and is capable of separating the cover at a second position which is different from the first position.

Abstract: A substrate treatment apparatus according to an embodiment includes a treatment part, a cyclic path, a heater, and a first injector. The treatment part is supplied with an etchant containing phosphoric acid and a silica deposition suppressor, and brings a substrate having a silicon nitride film on a surface thereof into contact with the etchant to remove the silicon nitride film from the substrate. The cyclic path circulates the etchant in the treatment part. The heater heats the etchant. The first injector is provided on the cyclic path, and injects the silica deposition suppressor into the etchant.

Abstract: According to one embodiment, a material feeder includes a feeding unit. The feeding unit includes a container that is containable of a powdery material and a first wall that is provided with a plurality of first openings communicated with the container and at least partially covers a region to which the material is fed, the feeding unit feeding the material in the container from the first openings to the region to form a layer of the material.

Abstract: According to one embodiment, a gas supply pipe has a first gas pipe configured to blow a gas which has flowed from an inflow opening via first gas blow holes arranged along a longitudinal direction, and a second gas pipe provided in parallel with the first gas pipe. The second gas pipe has second gas blow holes arranged along the longitudinal direction, and allows the gas to flow in a direction opposite to the first gas pipe.

Abstract: According to one embodiment, a semiconductor manufacturing apparatus includes a process tube, a substrate supporting unit, and a heater. A surface processing area is provided in a portion of the outer surface of the process tube facing the heater. The surface processing area is processed to reduce the heat radiation passing compared to that of other areas of the outer surface. The surface processing area is provided in a range sandwiched by a straight line connecting the upper end of the heater and the upper end of the substrate supporting unit and a straight line connecting the lower end of the heater and the lower end of the substrate supporting unit.

Abstract: A film-forming apparatus and film-forming method is provided that includes a reflector system capable of adjusting the temperature distribution of a substrate. The essential role of a reflector is to reduce the output of a heater by reflecting radiation heat from the heater and to protect members provided below the heater from heat. When a silicon wafer is heated by a first heater and a second heater, the temperature of the silicon wafer becomes higher in the inner circumferential part of the wafer rather than in the outer circumferential part of the silicon wafer. When a ring-shaped reflector is used, radiation heat is reflected by the ring-shaped portion, but is not reflected by the inner circumferential part of the reflector. Therefore, the use of a ring-shaped reflector makes it possible to allow a wafer to have an even heating distribution.