Abstract: A semiconductor device according to an embodiment includes a semiconductor substrate, a cell region, and a termination region. The termination region surrounds the cell region and includes a plurality of first diffusion layers containing a first conductivity type impurity. In a cross-section of the termination region in a first direction perpendicular to the first face, at least one of the plurality of first diffusion layers includes a first region extending in the first direction from the first face toward a second face of the semiconductor substrate, and a second region extending in a second direction orthogonal to the first direction from the first region. The concentration of the first conductivity type impurity contained in the second region is lower than the concentration of the first conductivity type impurity contained in the first region.

Abstract: A semiconductor device includes a semiconductor substrate, a cell region provided, and a termination region. The termination region surrounds the cell region and includes a plurality of first diffusion layers containing a first conductive impurity, a plurality of second diffusion layers each disposed on an outer side of each of the plurality of first diffusion layers and having a concentration of the first conductive impurity lower than that of the first diffusion layers, and a plurality of conductive layers opposing the first diffusion layers and the second diffusion layers on the front face of the semiconductor substrate, the plurality of conductive layers electrically connected to the first diffusion layers, the plurality of conductive layers each having an outer end portion. On a lower side of the outer end portion, any one of the plurality of second diffusion layers is present.

Abstract: A semiconductor device includes a semiconductor part, first to fourth electrodes and a control electrode. The first and second electrodes are provided respectively on back and front surfaces of the semiconductor part. The third electrode is provided between the first and second electrodes, and provided in the semiconductor part with a first insulating film interposed. The fourth and control electrodes are provided between the second and third electrodes. The fourth and control electrodes extends into the semiconductor part from the front side and faces the third electrode with a second insulating film interposed. The fourth electrode is positioned between the semiconductor part and the control electrode. The first insulating film extends between the semiconductor part and the control electrode and between the semiconductor part and the fourth electrode. The fourth electrode faces the control electrode with a third insulating film interposed, and is electrically connected to the third electrode.

Abstract: According to one embodiment, a semiconductor device includes first and second electrodes, a first conductive member, a semiconductor member, and an insulating member. The first electrode includes a first face. The second electrode includes a first conductive region and a first conductive portion. The first conductive portion is electrically connected to the first conductive region. The first conductive member is provided between the first face and the first conductive region. The semiconductor member is provided between the first face and the second electrode. The semiconductor member includes a first semiconductor region of a first conductive type, a second semiconductor region of a second conductive type, a third semiconductor region of the second conductive type, a fourth semiconductor region of the first conductive type, and a fifth semiconductor region of the first conductive type. The second semiconductor region is located between the third partial region and the third semiconductor region.

Abstract: Provided is a molybdenum sulfide that is ribbon-shaped and particularly suitable for a hydrogen generation catalyst. Disclosed are a ribbon-shaped molybdenum sulfide, in which 50 particles as measured by observation with a scanning electron microscope (SEM) have a shape of, on average, 500 to 10000 nm in length, 10 to 1000 nm in width, and 3 to 200 nm in thickness; a method for producing the ribbon-shaped molybdenum sulfide, including: (1) heating a molybdenum oxide at a temperature of 200 to 1000° C. in the presence of a sulfur source; or (2) heating a molybdenum oxide at a temperature of 100 to 800° C. in the absence of a sulfur source, and then heating the molybdenum oxide at a temperature of 200 to 1000° C. in the presence of a sulfur source; and a hydrogen generation catalyst including the ribbon-shaped molybdenum sulfide.

Abstract: An agent for forming wings on gyoza dumplings that has a pH of not less than 8.3, can form large spreading wings, suppress frying unevenness in the wings and fried surfaces, and suppress unfried residues.

Abstract: Provided is a molybdenum sulfide that is ribbon-shaped and particularly suitable for a hydrogen generation catalyst. Disclosed are a ribbon-shaped molybdenum sulfide, in which 50 particles as measured by observation with a scanning electron microscope (SEM) have a shape of, on average, 500 to 10000 nm in length, 10 to 1000 nm in width, and 3 to 200 nm in thickness; a method for producing the ribbon-shaped molybdenum sulfide, including: (1) heating a molybdenum oxide at a temperature of 200 to 1000° C. in the presence of a sulfur source; or (2) heating a molybdenum oxide at a temperature of 100 to 800° C. in the absence of a sulfur source, and then heating the molybdenum oxide at a temperature of 200 to 1000° C. in the presence of a sulfur source; and a hydrogen generation catalyst including the ribbon-shaped molybdenum sulfide.

Abstract: A problem is to provide a silver paste which can produce, without variation in resistivity value, a conductive silver coating film exhibiting resistivity substantially equivalent to the resistance value of bulk silver in low-temperature sintering. The problem is solved by providing a silver paste including a silver nanoparticle aqueous dispersion prepared by using a compound having a polyethyleneimine skeleton as a protective agent, a compound having a functional group reactable with nitrogen atoms in the polyethyleneimine, and at least one compound selected from the group consisting of a compound having an amine functional group and a compound having an amide functional group.

Abstract: A problem is to provide a silver paste which can produce, without variation in resistivity value, a conductive silver coating film exhibiting resistivity substantially equivalent to the resistance value of bulk silver in low-temperature sintering. The problem is solved by providing a silver paste including a silver nanoparticle aqueous dispersion prepared by using a compound having a polyethyleneimine skeleton as a protective agent, a compound having a functional group reactable with nitrogen atoms in the polyethyleneimine, and at least one compound selected from the group consisting of a compound having an amine functional group and a compound having an amide functional group.

Abstract: The present invention provides: a catalyst for electroless plating composed of a complex of a compound (X) and metal nanoparticles (Y), wherein the compound (X) is produced by polymerizing a monomer mixture (I) containing a (meth)acrylic acid-based monomer having at least one anionic functional group selected from the group consisting of a carboxyl group, a phosphoric acid group, a phosphorous acid group, a sulfonic acid group, a sulfinic acid group and a sulfenic acid group, and also provides a metal film produced using the catalyst, and a method for producing a metal film using the catalyst.

Abstract: Provided is a composite including copper nanoparticles or copper(I) oxide nanoparticles and a thioether-containing organic compound represented by X(OCH2CHR1)nOCH2CH(OH)CH2SZ [X represents an alkyl group; R1 represents a hydrogen atom or a methyl group; n represents an integer of 2 to 100; R1 is independent between repeating units and may be the same or different; and Z represents an alkyl group, an allyl group, an aryl group, an arylalkyl group, —R2—OH, —R2—NHR3, or —R2—(COR4)m (where R2 represents a saturated hydrocarbon group; R3 represents a hydrogen atom, an acyl group, an alkoxycarbonyl group, or a benzyloxycarbonyl group; R4 represents a hydroxy group, an alkyl group, or an alkoxy group; and m represents 1 to 3)].

Abstract: Provided is a composite including copper nanoparticles or copper(I) oxide nanoparticles and a thioether-containing organic compound represented by X(OCH2CHR1)nOCH2CH(OH)CH2SZ [X represents an alkyl group; R1 represents a hydrogen atom or a methyl group; n represents an integer of 2 to 100; R1 is independent between repeating units and may be the same or different; and Z represents an alkyl group, an allyl group, an aryl group, an arylalkyl group, —R2—OH, —R2—NHR3, or —R2—(COR4)m (where R2 represents a saturated hydrocarbon group; R3 represents a hydrogen atom, an acyl group, an alkoxycarbonyl group, or a benzyloxycarbonyl group; R4 represents a hydroxy group, an alkyl group, or an alkoxy group; and m represents 1 to 3)].

Abstract: The present invention relates to powder containing silver nanoparticles having an average particle size of 2 to 50 nm in an amount of 95% or more by mass and to applications of the powder. Silver-containing powder containing the silver nanoparticles is obtained by reducing a silver compound in the presence of a compound obtained by bonding polyethylene glycol to polyethyleneimine having a certain molecular weight and then by performing a concentration step and a drying step. A plastic substrate is obtained by directly applying a conductive paste that uses the powder on a plastic substrate and by performing drying.