Patents by Inventor Kaori NARUMIYA

Kaori NARUMIYA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Manufacturing method of semiconductor device
    Patent number: 11367624
    Abstract: According to one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes forming a second film on the first film. The method further includes forming a recess in the first film using the second film as a mask. The second film includes a first layer having carbon and a second layer having carbon formed on the first layer. The second layer has a second carbon density lower than a first carbon density of the first layer.
    Type: Grant
    Filed: March 2, 2020
    Date of Patent: June 21, 2022
    Assignee: KIOXIA CORPORATION
    Inventors: Junichi Hashimoto, Kaori Narumiya, Kosuke Horibe, Soichi Yamazaki, Kei Watanabe, Yusuke Kondo, Mitsuhiro Omura, Takehiro Kondoh, Yuya Matsubara, Junya Fujita, Toshiyuki Sasaki
  • MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    Publication number: 20210066090
    Abstract: According to one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes forming a second film on the first film. The method further includes forming a recess in the first film using the second film as a mask. The second film includes a first layer having carbon and a second layer having carbon formed on the first layer. The second layer has a second carbon density lower than a first carbon density of the first layer.
    Type: Application
    Filed: March 2, 2020
    Publication date: March 4, 2021
    Applicant: KIOXIA CORPORATION
    Inventors: Junichi HASHIMOTO, Kaori NARUMIYA, Kosuke HORIBE, Soichi YAMAZAKI, Kei WATANABE, Yusuke KONDO, Mitsuhiro OMURA, Takehiro KONDOH, Yuya MATSUBARA, Junya FUJITA, Toshiyuki SASAKI
  • Dry etching method and method for manufacturing semiconductor device
    Patent number: 10332906
    Abstract: A dry etching method includes a process of, while continuously applying bias power using an ion species to a material to be processed including a first conductive member, a first insulating film provided on the first conductive member, a second conductive member provided on the first insulating film, and a second insulating film provided on the second conductive member, dry etching the second insulating film to expose the second conductive member. A time for which the bias power is continuously applied is set to 50 microseconds or less and a duty ratio of the bias power is set to 50% or less.
    Type: Grant
    Filed: July 27, 2017
    Date of Patent: June 25, 2019
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Kaori Narumiya, Hisataka Hayashi, Keisuke Kikutani, Akio Ui, Yosuke Sato
  • DRY ETCHING METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    Publication number: 20180145086
    Abstract: A dry etching method includes a process of, while continuously applying bias power using an ion species to a material to be processed including a first conductive member, a first insulating film provided on the first conductive member, a second conductive member provided on the first insulating film, and a second insulating film provided on the second conductive member, dry etching the second insulating film to expose the second conductive member. A time for which the bias power is continuously applied is set to 50 microseconds or less and a duty ratio of the bias power is set to 50% or less.
    Type: Application
    Filed: July 27, 2017
    Publication date: May 24, 2018
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Kaori NARUMIYA, Hisataka HAYASHI, Keisuke KIKUTANI, Akio UI, Yosuke SATO