Abstract: An object of the present invention is to provide a compound having an anti-inflammatory activity or a pharmacologically acceptable salt thereof. The solution of the present invention is a compound of general formula (1) or a pharmacologically acceptable salt thereof. wherein the symbols in the formula are defined below: R1: e.g., a C1-C6 alkyl group; R2: a C1-C6 alkyl group; A: e.g., an oxygen atom; and R3: e.g., a C1-C6 alkyl group.

Abstract: The present invention provides a microstructure in which evenly distributed crystal grains line up in parallel lines extending along the surface of the film, and a no-lateral-growth region left at each of locations exposed to both ends of a grain interface, which serves as a partition between the neighboring two crystal grains. According to the present invention, there are also provided: a method for forming a polycrystalline film, such as a thin polycrystalline silicon film, a thin aluminum film, and a thin copper film, which is flat and even, in surface, electrically uniform and stable, and mechanically stable; a laser crystallization device for use in manufacture of polycrystalline films, and a semiconductor device using the polycrystalline film and having good electrical property and increased breakdown voltage.

Abstract: The present invention provides a microstructure in which evenly distributed crystal grains line up in parallel lines extending along the surface of the film, and a no-lateral-growth region left at each of locations exposed to both ends of a grain interface, which serves as a partition between the neighboring two crystal grains. According to the present invention, there are also provided: a method for forming a polycrystalline film, such as a thin polycrystalline silicon film, a thin aluminum film, and a thin copper film, which is flat and even, in surface, electrically uniform and stable, and mechanically stable; a laser crystallization device for use in manufacture of polycrystalline films, and a semiconductor device using the polycrystalline film and having good electrical property and increased breakdown voltage.

Abstract: A set of film thickness calculation values of constituent films of a lamination structure is calculated at a set of non-treating regions unexposed to laser light, the non-treating regions residing close to a set of treating regions to be annealed, and a set of crystallization levels of the set of treating regions is calculated by a fitting between a second spectral spectrum measurement values of the set of treating regions and a second spectral spectrum calculation values computed from the set of film thickness calculation values, for use to adjust a set of laser energies of laser light to be irradiated on a TFT substrate to be laser annealed at the next time.

Abstract: A hole injection layer, a hole transport layer, a blue light emitting layer, an orange light emitting layer, an electron transport layer, an electron injection layer, and a cathode are formed in this order on an anode. The blue light emitting layer is composed of a host material doped with an assisting dopant and a luminescent dopant emitting blue light. A material used for the hole transport layer is used for the assisting dopant. The orange light emitting layer is composed of a host material doped with a luminescent dopant emitting orange light.

Abstract: An organic EL device according to the present invention has a layered structure in which a hole injection electrode (anode), a hole injection layer, a hole transport layer, a light emitting layer, a hole blocking layer, an electron injection layer, and an electron injection electrode (cathode) are layered in this order on a substrate. The light emitting layer is composed of a host material and an emitting dopant. A compound for light emitting device which is an organic material is employed for the emitting material. The compound for light emitting device is a metal complex employing a ligand having a substituent containing boron.

Abstract: A hole injection layer, a hole transport layer, a blue light emitting layer, an orange light emitting layer, an electron transport layer, an electron injection layer, and a cathode are formed in this order on an anode. The blue light emitting layer is composed of a host material doped with an assisting dopant and a luminescent dopant emitting blue light. A material used for the hole transport layer is used for the assisting dopant. The orange light emitting layer is composed of a host material doped with a luminescent dopant emitting orange light.

Abstract: An organic EL device according to the present invention has a layered structure in which a hole injection electrode (anode), a hole injection layer, a hole transport layer, a light emitting layer, a hole blocking layer, an electron injection layer, and an electron injection electrode (cathode) are layered in this order on a substrate. The light emitting layer is composed of a host material and an emitting dopant. A compound for light emitting device which is an organic material is employed for the emitting material. The compound for light emitting device is a metal complex employing a ligand having a substituent containing boron.

Abstract: A method of producing an organic compound, which includes the steps of irradiating a reaction solution with an electromagnetic wave having a wavelength range of 900 MHz to 30 GHz to heat the solution, thereby producing the organic compound, and removing a low-boiling point component produced through the reaction from a reaction system to facilitate the reaction.