Patents by Inventor Kaori Takimoto

Kaori Takimoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190369299
    Abstract: To make it possible to restrain generation of chipping or cracking in a substrate of a laminated lens structure. A laminated lens structure includes substrates with lens which each have a lens disposed inside a through-hole formed in the substrate and which are laminated on one another by direct bonding, in which the substrates are each provided in the vicinity of the outer circumference thereof with through grooves penetrating the substrate. The present technology is applicable, for example, to a compound eye camera module.
    Type: Application
    Filed: January 16, 2018
    Publication date: December 5, 2019
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Atsushi YAMAMOTO, Kaori TAKIMOTO
  • Publication number: 20190341417
    Abstract: The present disclosure relates to a semiconductor device, an electronic device, and a manufacturing method that can maintain the mounting reliability of an underfill. A chip is formed by a circuit of an imaging element being produced on a Si substrate that is a first substrate and a second substrate being produced on an adhesive formed on the circuit. In this event, a photosensitive material is formed around the chip after the chip is mounted on a mounting substrate by a solder ball or in the state of the chip, then an underfill is formed, and then only the photosensitive material is dissolved. The present disclosure can be applied to, for example, a CMOS solid-state imaging sensor used for an imaging device such as a camera.
    Type: Application
    Filed: July 19, 2019
    Publication date: November 7, 2019
    Applicant: Sony Corporation
    Inventors: Masaya NAGATA, Kaori TAKIMOTO
  • Patent number: 10403669
    Abstract: The present disclosure relates to a semiconductor device, an electronic device, and a manufacturing method that can maintain the mounting reliability of an underfill. A chip is formed by a circuit of an imaging element being produced on a Si substrate that is a first substrate and a second substrate being produced on an adhesive formed on the circuit. In this event, a photosensitive material is formed around the chip after the chip is mounted on a mounting substrate by a solder ball or in the state of the chip, then an underfill is formed, and then only the photosensitive material is dissolved. The present disclosure can be applied to, for example, a CMOS solid-state imaging sensor used for an imaging device such as a camera.
    Type: Grant
    Filed: June 2, 2016
    Date of Patent: September 3, 2019
    Assignee: Sony Corporation
    Inventors: Masaya Nagata, Kaori Takimoto
  • Publication number: 20190237513
    Abstract: A solid state image sensor includes a semiconductor substrate where photoelectric conversion regions for converting light into charges are arranged per pixel planarly arranged; an organic photoelectric conversion film laminated at a light irradiated side of the semiconductor substrate via an insulation film and formed at the regions where the pixels are formed; a lower electrode formed at and in contact with the organic photoelectric conversion film at a semiconductor substrate side; a first upper electrode laminated at a light irradiated side of the organic photoelectric conversion film and formed such that ends of the first upper electrode are substantially conform with ends of the organic photoelectric conversion film when the solid state image sensor is planarly viewed; and a film stress suppressor for suppressing an effect of a film stress on the organic photoelectric conversion film, the film stress being generated on the first upper electrode.
    Type: Application
    Filed: April 8, 2019
    Publication date: August 1, 2019
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Masahiro Joei, Kaori Takimoto
  • Patent number: 10304904
    Abstract: A solid state image sensor includes a semiconductor substrate where photoelectric conversion regions for converting light into charges are arranged per pixel planarly arranged; an organic photoelectric conversion film laminated at a light irradiated side of the semiconductor substrate via an insulation film and formed at the regions where the pixels are formed; a lower electrode formed at and in contact with the organic photoelectric conversion film at a semiconductor substrate side; a first upper electrode laminated at a light irradiated side of the organic photoelectric conversion film and formed such that ends of the first upper electrode are substantially conform with ends of the organic photoelectric conversion film when the solid state image sensor is planarly viewed; and a film stress suppressor for suppressing an effect of a film stress on the organic photoelectric conversion film, the film stress being generated on the first upper electrode.
    Type: Grant
    Filed: June 26, 2018
    Date of Patent: May 28, 2019
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Masahiro Joei, Kaori Takimoto
  • Publication number: 20190115414
    Abstract: [Object] To enable further reducing a chip area. [Solution] Provided is a display module including: a display device configured such that a pixel region in which a plurality of pixels for displaying an image are arranged is formed on an upper surface of a substrate, and a device-side signal electrode for exchanging a signal related to the pixels with an outside is disposed on a side surface of the substrate; and a module casing configured to store the display device and have a casing-side signal electrode electrically connected to the device-side signal electrode in a spot facing the device-side signal electrode.
    Type: Application
    Filed: April 14, 2017
    Publication date: April 18, 2019
    Inventors: Hiroshi Horikoshi, Masato Kawashima, Kaori Takimoto, Masaya Nagata
  • Publication number: 20180301510
    Abstract: A solid state image sensor includes a semiconductor substrate where photoelectric conversion regions for converting light into charges are arranged per pixel planarly arranged; an organic photoelectric conversion film laminated at a light irradiated side of the semiconductor substrate via an insulation film and formed at the regions where the pixels are formed; a lower electrode formed at and in contact with the organic photoelectric conversion film at a semiconductor substrate side; a first upper electrode laminated at a light irradiated side of the organic photoelectric conversion film and formed such that ends of the first upper electrode are substantially conform with ends of the organic photoelectric conversion film when the solid state image sensor is planarly viewed; and a film stress suppressor for suppressing an effect of a film stress on the organic photoelectric conversion film, the film stress being generated on the first upper electrode.
    Type: Application
    Filed: June 26, 2018
    Publication date: October 18, 2018
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Masahiro Joei, Kaori Takimoto
  • Patent number: 10014349
    Abstract: A solid state image sensor includes a semiconductor substrate where photoelectric conversion regions for converting light into charges are arranged per pixel planarly arranged; an organic photoelectric conversion film laminated at a light irradiated side of the semiconductor substrate via an insulation film and formed at the regions where the pixels are formed; a lower electrode formed at and in contact with the organic photoelectric conversion film at a semiconductor substrate side; a first upper electrode laminated at a light irradiated side of the organic photoelectric conversion film and formed such that ends of the first upper electrode are substantially conform with ends of the organic photoelectric conversion film when the solid state image sensor is planarly viewed; and a film stress suppressor for suppressing an effect of a film stress on the organic photoelectric conversion film, the film stress being generated on the first upper electrode.
    Type: Grant
    Filed: May 8, 2017
    Date of Patent: July 3, 2018
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Masahiro Joei, Kaori Takimoto
  • Publication number: 20180166491
    Abstract: The present disclosure relates to a semiconductor device, an electronic device, and a manufacturing method that can maintain the mounting reliability of an underfill. A chip is formed by a circuit of an imaging element being produced on a Si substrate that is a first substrate and a second substrate being produced on an adhesive formed on the circuit. In this event, a photosensitive material is formed around the chip after the chip is mounted on a mounting substrate by a solder ball or in the state of the chip, then an underfill is formed, and then only the photosensitive material is dissolved. The present disclosure can be applied to, for example, a CMOS solid-state imaging sensor used for an imaging device such as a camera.
    Type: Application
    Filed: June 2, 2016
    Publication date: June 14, 2018
    Inventors: Masaya NAGATA, Kaori TAKIMOTO
  • Patent number: 9786708
    Abstract: A solid-state image pickup unit including a pixel section having a plurality of unit pixels two-dimensionally arranged in a matrix formation, wherein a unit pixel includes a conductive region of a first conductivity type having a surface adjacent to a multilayer wiring layer, a charge accumulation region of a second conductivity type formed within the first conductive region, wherein the charge accumulation region is separated from the surface of the conductive region adjacent to the multilayer wiring layer by a separation section, and a contact disposed in the conductive region, the contact electrically connecting the charge accumulation region and an external wire of the multilayer wiring layer.
    Type: Grant
    Filed: November 12, 2015
    Date of Patent: October 10, 2017
    Assignee: Sony Corporation
    Inventors: Tetsuji Yamaguchi, Kazunori Nagahata, Toshihiro Miura, Kaori Takimoto
  • Publication number: 20170243925
    Abstract: A solid state image sensor includes a semiconductor substrate where photoelectric conversion regions for converting light into charges are arranged per pixel planarly arranged; an organic photoelectric conversion film laminated at a light irradiated side of the semiconductor substrate via an insulation film and formed at the regions where the pixels are formed; a lower electrode formed at and in contact with the organic photoelectric conversion film at a semiconductor substrate side; a first upper electrode laminated at a light irradiated side of the organic photoelectric conversion film and formed such that ends of the first upper electrode are substantially conform with ends of the organic photoelectric conversion film when the solid state image sensor is planarly viewed; and a film stress suppressor for suppressing an effect of a film stress on the organic photoelectric conversion film, the film stress being generated on the first upper electrode.
    Type: Application
    Filed: May 8, 2017
    Publication date: August 24, 2017
    Inventors: Masahiro Joei, Kaori Takimoto
  • Patent number: 9666643
    Abstract: A solid state image sensor includes a semiconductor substrate where photoelectric conversion regions for converting light into charges are arranged per pixel planarly arranged; an organic photoelectric conversion film laminated at a light irradiated side of the semiconductor substrate via an insulation film and formed at the regions where the pixels are formed; a lower electrode formed at and in contact with the organic photoelectric conversion film at a semiconductor substrate side; a first upper electrode laminated at a light irradiated side of the organic photoelectric conversion film and formed such that ends of the first upper electrode are substantially conform with ends of the organic photoelectric conversion film when the solid state image sensor is planarly viewed; and a film stress suppressor for suppressing an effect of a film stress on the organic photoelectric conversion film, the film stress being generated on the first upper electrode.
    Type: Grant
    Filed: September 4, 2014
    Date of Patent: May 30, 2017
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Masahiro Joei, Kaori Takimoto
  • Publication number: 20160329379
    Abstract: There is provided a solid state imaging element including: an insulation film laminated on a semiconductor substrate; a lower transparent electrode film formed and separated by the insulation film per pixel; a hydrophobic treatment layer laminated on a flat surface of the insulation film and the lower transparent electrode film; an organic photoelectric conversion layer laminated on the hydrophobic treatment layer; and an upper transparent electrode film laminated on the organic photoelectric conversion layer. Also, there is provided a production method thereof and an electronic device.
    Type: Application
    Filed: July 15, 2016
    Publication date: November 10, 2016
    Inventors: Shingo Takahashi, Masahiro Joei, Kaori Takimoto
  • Patent number: 9490441
    Abstract: There are provided a semiconductor device capable of adjusting a work function without reducing light transmittance of an electrode, a method of manufacturing this semiconductor device, a solid-state image pickup unit including this semiconductor device, and an electronic apparatus including this solid-state image pickup action. The semiconductor device includes a functional layer between a first electrode and a second electrode, the functional layer including an organic film, in which the first electrode and the second electrode are made of a same transparent conductive material, and an oxygen amount at an interface on the functional layer side of the first electrode is smaller than an oxygen amount at an interface on the functional layer side of the second electrode.
    Type: Grant
    Filed: July 25, 2013
    Date of Patent: November 8, 2016
    Assignee: SONY CORPORATION
    Inventor: Kaori Takimoto
  • Patent number: 9412791
    Abstract: There is provided a solid state imaging element including: an insulation film laminated on a semiconductor substrate; a lower transparent electrode film formed and separated by the insulation film per pixel; a hydrophobic treatment layer laminated on a flat surface of the insulation film and the lower transparent electrode film; an organic photoelectric conversion layer laminated on the hydrophobic treatment layer; and an upper transparent electrode film laminated on the organic photoelectric conversion layer. Also, there is provided a production method thereof and an electronic device.
    Type: Grant
    Filed: January 15, 2015
    Date of Patent: August 9, 2016
    Assignee: SONY CORPORATION
    Inventors: Shingo Takahashi, Masahiro Joei, Kaori Takimoto
  • Patent number: 9281486
    Abstract: A semiconductor device includes, in order on a substrate, an organic semiconductor layer, an inorganic film, and a protective film. The inorganic film and the protective film each have a peripheral edge portion that is formed in an outer region compared to a peripheral edge portion of the organic semiconductor layer.
    Type: Grant
    Filed: November 20, 2012
    Date of Patent: March 8, 2016
    Assignee: SONY CORPORATION
    Inventors: Kaori Takimoto, Tetsuji Yamaguchi
  • Publication number: 20160064440
    Abstract: A solid-state image pickup unit including a pixel section having a plurality of unit pixels two-dimensionally arranged in a matrix formation, wherein a unit pixel includes a conductive region of a first conductivity type having a surface adjacent to a multilayer wiring layer, a charge accumulation region of a second conductivity type formed within the first conductive region, wherein the charge accumulation region is separated from the surface of the conductive region adjacent to the multilayer wiring layer by a separation section, and a contact disposed in the conductive region, the contact electrically connecting the charge accumulation region and an external wire of the multilayer wiring layer.
    Type: Application
    Filed: November 12, 2015
    Publication date: March 3, 2016
    Inventors: Tetsuji Yamaguchi, Kazunori Nagahata, Toshihiro Miura, Kaori Takimoto
  • Patent number: 9219100
    Abstract: A solid-state image pickup unit including a pixel section having a plurality of unit pixels two-dimensionally arranged in a matrix formation, wherein a unit pixel includes a conductive region of a first conductivity type having a surface adjacent to a multilayer wiring layer, a charge accumulation region of a second conductivity type formed within the first conductive region, wherein the charge accumulation region is separated from the surface of the conductive region adjacent to the multilayer wiring layer by a separation section, and a contact disposed in the conductive region, the contact electrically connecting the charge accumulation region and an external wire of the multilayer wiring layer.
    Type: Grant
    Filed: January 21, 2014
    Date of Patent: December 22, 2015
    Assignee: Sony Corporation
    Inventors: Tetsuji Yamaguchi, Kazunori Nagahata, Toshihiro Miura, Kaori Takimoto
  • Publication number: 20150206925
    Abstract: There is provided a solid state imaging element including: an insulation film laminated on a semiconductor substrate; a lower transparent electrode film formed and separated by the insulation film per pixel; a hydrophobic treatment layer laminated on a flat surface of the insulation film and the lower transparent electrode film; an organic photoelectric conversion layer laminated on the hydrophobic treatment layer; and an upper transparent electrode film laminated on the organic photoelectric conversion layer. Also, there is provided a production method thereof and an electronic device.
    Type: Application
    Filed: January 15, 2015
    Publication date: July 23, 2015
    Inventors: Shingo Takahashi, Masahiro Joei, Kaori Takimoto
  • Publication number: 20150188065
    Abstract: There are provided a semiconductor device capable of adjusting a work function without reducing light transmittance of an electrode, a method of manufacturing this semiconductor device, a solid-state image pickup unit including this semiconductor device, and an electronic apparatus including this solid-state image pickup action. The semiconductor device includes a functional layer between a first electrode and a second electrode, the functional layer including an organic film, in which the first electrode and the second electrode are made of a same transparent conductive material, and an oxygen amount at an interface on the functional layer side of the first electrode is smaller than an oxygen amount at an interface on the functional layer side of the second electrode.
    Type: Application
    Filed: July 25, 2013
    Publication date: July 2, 2015
    Inventor: Kaori Takimoto