Abstract: The impurity analyzing method is for analyzing impurities that exist on a surface of a semiconductor wafer, which includes a step of bubbling a mixed solution including hydrofluoric acid and aqueous hydrogen peroxide or a mixed solution including hydrofluoric acid and aqueous ozone to generate a vapor including hydrofluoric acid and aqueous hydrogen peroxide or a vapor including hydrofluoric acid and aqueous ozone, a step of dissolving a film formed on the surface of the semiconductor wafer by means of the vapor including hydrofluoric acid and aqueous hydrogen peroxide or the vapor including hydrofluoric acid and aqueous ozone, a step of supplying liquid drops onto the surface of the semiconductor wafer and collecting the impurities along with the liquid drops, and a step of analyzing the collected impurities.