Patents by Inventor Kaori Yomogihara

Kaori Yomogihara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing a semiconductor device from which damage layers and native oxide films in connection holes have been removed
    Patent number: 8232197
    Abstract: An insulating film formed on a conducting layer is dry-etched so as to make a connection hole in the insulating film to expose the conducting layer. Plasma is supplied onto the exposed conducting layer to dry-clean a damage layer produced in the connection hole. A product produced in the connection hole as a result of the dry cleaning is removed by a wet process. An oxide film formed in the connection hole as a result of the wet process is etched by a chemical dry process using a gas including either NF3 or HF. A thermally decomposable reaction product produced as a result of the etching is removed by heat treatment.
    Type: Grant
    Filed: September 9, 2009
    Date of Patent: July 31, 2012
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Makoto Honda, Kaori Yomogihara, Kazuhiro Murakami, Masanori Numano, Takahito Nagamatsu, Hideaki Harakawa, Hideto Matsuyama, Hirokazu Ezawa, Hisashi Kaneko
  • Method of manufacturing a semiconductor device from which damage layers and native oxide films in connection holes have been removed
    Publication number: 20100003816
    Abstract: An insulating film formed on a conducting layer is dry-etched so as to make a connection hole in the insulating film to expose the conducting layer. Plasma is supplied onto the exposed conducting layer to dry-clean a damage layer produced in the connection hole. A product produced in the connection hole as a result of the dry cleaning is removed by a wet process. An oxide film formed in the connection hole as a result of the wet process is etched by a chemical dry process using a gas including either NF3 or HF. A thermally decomposable reaction product produced as a result of the etching is removed by heat treatment.
    Type: Application
    Filed: September 9, 2009
    Publication date: January 7, 2010
    Inventors: Makoto Honda, Kaori Yomogihara, Kazuhiro Murakami, Masanori Numano, Takahito Nagamatsu, Hideaki Harakawa, Hideto Matsuyama, Hirokazu Ezawa, Hisashi Kaneko
  • Peripheral processing method and method of manufacturing a semiconductor device
    Patent number: 7638439
    Abstract: A peripheral processing method includes: by at least one of locally heating the periphery of a workpiece including a silicon-based substrate and selectively supplying reacting activation species to the periphery, allowing oxidation rate on the periphery to be higher than oxidation rate of native oxide film on a surface of the silicon-based substrate, thereby forming a first oxide film along the periphery, the first oxide film being thicker than the native oxide film.
    Type: Grant
    Filed: November 28, 2006
    Date of Patent: December 29, 2009
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Takeo Kubota, Atsushi Shigeta, Kaori Yomogihara, Makoto Honda, Hirokazu Ezawa
  • Method of manufacturing a semiconductor device from which damage layers and native oxide films in connection holes have been removed
    Patent number: 7605076
    Abstract: An insulating film formed on a conducting layer is dry-etched so as to make a connection hole in the insulating film to expose the conducting layer. Plasma is supplied onto the exposed conducting layer to dry-clean a damage layer produced in the connection hole. A product produced in the connection hole as a result of the dry cleaning is removed by a wet process. An oxide film formed in the connection hole as a result of the wet process is etched by a chemical dry process using a gas including either NF3 or HF. A thermally decomposable reaction product produced as a result of the etching is removed by heat treatment.
    Type: Grant
    Filed: February 3, 2006
    Date of Patent: October 20, 2009
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Makoto Honda, Kaori Yomogihara, Kazuhiro Murakami, Masanori Numano, Takahito Nagamatsu, Hideaki Harakawa, Hideto Matsuyama, Hirokazu Ezawa, Hisashi Kaneko
  • Peripheral processing method and method of manufacturing a semiconductor device
    Publication number: 20070264822
    Abstract: A peripheral processing method includes: by at least one of locally heating the periphery of a workpiece including a silicon-based substrate and selectively supplying reacting activation species to the periphery, allowing oxidation rate on the periphery to be higher than oxidation rate of native oxide film on a surface of the silicon-based substrate, thereby forming a first oxide film along the periphery, the first oxide film being thicker than the native oxide film.
    Type: Application
    Filed: November 28, 2006
    Publication date: November 15, 2007
    Inventors: Takeo Kubota, Atsushi Shigeta, Kaori Yomogihara, Makoto Honda, Hirokazu Ezawa
  • Method of manufacturing a semiconductor device from which damage layers and native oxide films in connection holes have been removed
    Publication number: 20060189145
    Abstract: An insulating film formed on a conducting layer is dry-etched so as to make a connection hole in the insulating film to expose the conducting layer. Plasma is supplied onto the exposed conducting layer to dry-clean a damage layer produced in the connection hole. A product produced in the connection hole as a result of the dry cleaning is removed by a wet process. An oxide film formed in the connection hole as a result of the wet process is etched by a chemical dry process using a gas including either NF3 or HF. A thermally decomposable reaction product produced as a result of the etching is removed by heat treatment.
    Type: Application
    Filed: February 3, 2006
    Publication date: August 24, 2006
    Inventors: Makoto Honda, Kaori Yomogihara, Kazuhiro Murakami, Masanori Numano, Takahito Nagamatsu, Hideaki Harakawa, Hideto Matsuyama, Hirokazu Ezawa, Hisashi Kaneko