Abstract: A particulate measurement device includes: a nozzle which discharges liquid from an opening to form a flow of the liquid; a light emitter which emits light such that the light propagates in a region where the flow of the liquid is formed; a photodetector provided outside the region to receive the light from a partial region extending along a longitudinal direction of the region; and an air flow forming unit which forms a flow of gas along a direction in which the liquid flows, on an outer periphery of the region.

Abstract: A particulate measurement device includes: a nozzle which discharges liquid from an opening to form a flow of the liquid; a light emitter which emits light such that the light propagates in a region where the flow of the liquid is formed; a photodetector provided outside the region to receive the light from a partial region extending along a longitudinal direction of the region; and an air flow forming unit which forms a flow of gas along a direction in which the liquid flows, on an outer periphery of the region.

Abstract: A virus detection device includes a diffusion unit configured to diffuse a virus in a gas as an inspection target into an aqueous solution containing a fluorescent antibody specifically adsorptive to the virus by bringing the gas into contact with the aqueous solution and configured to adsorb the fluorescent antibody to the virus in the gas; an atomization unit configured to atomize the aqueous solution and generate a mist group of the aqueous solution in which the gas is diffused; a fluorescence measuring unit configured to measure a fluorescence intensity of the mist group; and an air current generator configured to form an air current flowing toward the fluorescence measuring unit from the atomization unit.

Abstract: In order to prevent particles within a unit from sticking to a substrate in a substrate processing process, an ion generator charges the particles. At the same time, a direct current voltage of the same polarity as the charged polarity of the particles is applied from a direct current power source to the substrate. In order to prevent generation of particles when producing gas plasma, a high-frequency voltage is applied to the upper and lower electrodes at multiple stages to produce plasma. In other words, at a first step, a minimum high-frequency voltage at which plasma can be ignited is applied to the upper and lower electrodes, thereby producing a minimum plasma. Thereafter, the applied voltage is increased in stages to produce predetermined plasma.

Abstract: A virus detection device includes a diffusion unit configured to diffuse a virus in a gas as an inspection target into an aqueous solution containing a fluorescent antibody specifically adsorptive to the virus by bringing the gas into contact with the aqueous solution and configured to adsorb the fluorescent antibody to the virus in the gas; an atomization unit configured to atomize the aqueous solution and generate a mist group of the aqueous solution in which the gas is diffused; a fluorescence measuring unit configured to measure a fluorescence intensity of the mist group; and an air current generator configured to form an air current flowing toward the fluorescence measuring unit from the atomization unit.

Abstract: A pattern forming method includes (a) forming pairs of deposits on sidewalls of mask portions in first mask patterns by forming a thin film thereon, etching it to leave deposits, and exposing a top surface of a second-layer film between the deposits; (b) forming second mask patterns formed of mask portions corresponding to the deposits by removing the mask portion, plasma etching the second-layer film, and removing the deposits; (c) forming a thin film thereon, and etching it to leave deposits on sidewalls of mask portions facing each other and to expose a third-layer film between the deposits while leaving deposits between adjacent mask portions; and (d) forming grooves thereon by removing the second mask portion, and etching off the third-layer film.

Abstract: A support structure for supporting a processing target object includes a support main body that supports a weight of the processing target object and recess-shaped supporting body accommodating portions formed on a top surface of the support main body. The support structure further includes supporting bodies accommodated in the respective supporting body accommodating portions to be protruded above the top surface of the support main body. The supporting bodies are rollable in the respective supporting body accommodating portions while supporting the processing target object of which bottom surface is in contact with upper peak portions of the supporting bodies.

Abstract: In a substrate inspection method, it is inspected whether the metal electrode is electrically connected to the conductive film by radiating electron beams onto a surface of the substrate to detect the number of secondary electrons emitted therefrom. The method includes placing the substrate onto a mounting table; inspecting the metal electrode by radiating electron beams onto an area of the substrate including the metal electrode at a first acceleration voltage and detecting secondary electrons emitted from the metal electrode; and radiating electron beams onto an area of the substrate not including the metal electrode at a second acceleration voltage. The second acceleration voltage is set such that a difference between the number of electrons entering the insulation film and the number of secondary electrons emitted from the insulation film is smaller at the second acceleration voltage than at the first acceleration voltage.

Abstract: A pattern forming method includes (a) forming pairs of deposits on sidewalls of mask portions in first mask patterns by forming a thin film thereon, etching it to leave deposits, and exposing a top surface of a second-layer film between the deposits; (b) forming second mask patterns formed of mask portions corresponding to the deposits by removing the mask portion, plasma etching the second-layer film, and removing the deposits; (c) forming a thin film thereon, and etching it to leave deposits on sidewalls of mask portions facing each other and to expose a third-layer film between the deposits while leaving deposits between adjacent mask portions; and (d) forming grooves thereon by removing the second mask portion, and etching off the third-layer film.

Abstract: The present invention relates to a particle measuring method for irradiating light to a surface of a substrate to scatter the light so as to measure a condition of particles on the substrate based on the scattered light. The particle measuring method according to the present invention comprises the steps of: heating a certain liquid to obtain a steam; supplying the steam onto a substrate so that a content of the steam is absorbed by each particle, while a temperature of the substrate is maintained in such a manner that the steam does not condense on the substrate; cooling the substrate before the particle dries so that the content absorbed by the particle is solidified, while preventing generation of solidified substance on regions of the surface of the substrate to which no particle adheres; and irradiating light to the substrate to scatter the light and detecting the scattered light, under a condition in which the content absorbed by the particle has been solidified.

Abstract: The present invention relates to a particle measuring method for irradiating light to a surface of a substrate to scatter the light so as to measure a condition of particles on the substrate based on the scattered light. The particle measuring method according to the present invention comprises the steps of: heating a certain liquid to obtain a steam; supplying the steam onto a substrate so that a content of the steam is absorbed by each particle, while a temperature of the substrate is maintained in such a manner that the steam does not condense on the substrate; cooling the substrate before the particle dries so that the content absorbed by the particle is solidified, while preventing generation of solidified substance on regions of the surface of the substrate to which no particle adheres; and irradiating light to the substrate to scatter the light and detecting the scattered light, under a condition in which the content absorbed by the particle has been solidified.

Abstract: In order to prevent particles within a unit from sticking to a substrate in a substrate processing process, an ion generator charges the particles. At the same time, a direct current voltage of the same polarity as the charged polarity of the particles is applied from a direct current power source to the substrate. In order to prevent generation of particles when producing gas plasma, a high-frequency voltage is applied to the upper and lower electrodes at multiple stages to produce plasma. In other words, at a first step, a minimum high-frequency voltage at which plasma can be ignited is applied to the upper and lower electrodes, thereby producing a minimum plasma. Thereafter, the applied voltage is increased in stages to produce predetermined plasma.

Abstract: A semiconductor manufacturing facility has a proper strength and an anti-vibration effect. The semiconductor facility contains processing apparatuses, installation tables and an installation floor. An apparatus having a vibration source is installed on an installation table having a rigid structure. The installation table is installed on the installation floor having a floor construction including a plurality of columns, which support a floor member extending in horizontal directions. An interval of the columns is 4 m to 12 m.

Abstract: A semiconductor manufacturing facility has a proper strength and an anti-vibration effect. The semiconductor facility contains processing apparatuses, installation tables and an installation floor. An apparatus having a vibration source is installed on an installation table having a rigid structure. The installation table is installed on the installation floor having a floor construction including a plurality of columns, which support a floor member extending in horizontal directions. An interval of the columns is 4 m to 12 m.

Abstract: An electrical inspecting apparatus includes an apparatus body having a housing section for housing a cassette in which a plurality of wafers are housed, an inspecting section provided with probes for applying an electrical inspection to the wafer, and a transfer section provided with a transfer arm for transferring the wafer between the housing section and the inspecting section. The housing section, inspecting section and transfer section are arranged side by side within the apparatus body, fan filters are mounted on the apparatus body for blowing air in a lateral direction through the housing section, inspecting section and transfer section, and an exhaust duct is mounted on the apparatus body for discharging the air flowing through the sections to the outside of the apparatus body.

Abstract: A heat treating device including a pressure detecting unit for outputting an output signal when a pressure in a heat processing furnace becomes a set value, an air release pipe having a first valve and a check valve, a differential pressure gauge shut off by a second valve in terms of pressure from the interior of the heat processing furnace, and an air feed pipe having a third valve. One ends of each of the air release pipe and the air feed pipe is connected respectively to the heat processing furnace and the other ends opened in air. In such arrangement, after processing gases are evacuated from the heat processing furnace, an inert gas is fed. Then when an internal pressure of the furnace becomes near an air pressure, the first valve is opened in response to the output signal of the pressure detecting unit to make the internal pressure of the heat processing furnace a little higher than the air pressure.