Patents by Inventor Kaoru Hatano

Kaoru Hatano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120286312
    Abstract: An object is to provide a method for manufacturing a light-emitting device including a flexible substrate, in which separation is performed without separation at the interface between the light-emitting layer and the electrode. A spacer formed of a light absorbing material which absorbs laser light is formed over a partition of one of substrates, a coloring layer is formed over the other substrate, and the substrates are bonded to each other with the use of a bonding layer. The light-emitting layer and the electrode which are formed over the spacer are irradiated with laser light through the coloring layer, so that at least the bonding layer among the light-emitting layer, the electrode, the coloring layer, and the bonding layer is melted to form a fixed portion where the bonding layer and the spacer are bonded by welding.
    Type: Application
    Filed: May 9, 2012
    Publication date: November 15, 2012
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Kaoru HATANO, Akihiro Chida, Akihisa Shimomura, Shunpei Yamazaki
  • Publication number: 20120273804
    Abstract: When a hollow structure in which a light-emitting element is provided between a pair of substrates is used in order to prevent oxygen or moisture from reaching the light-emitting element, light leakage to an adjacent pixel easily occurs as compared to a structure in which a space between a pair of substrates is filled with a resin such as an adhesive. In order to reduce light leakage to an adjacent pixel in the hollow structure, a light-blocking spacer is formed over a partition to keep the distance between the pair of substrates uniform. The cross-sectional shape of the light-blocking spacer is a trapezoid having a lower side shorter than an upper side.
    Type: Application
    Filed: April 24, 2012
    Publication date: November 1, 2012
    Inventor: Kaoru Hatano
  • Publication number: 20120273834
    Abstract: An object is to provide a light-emitting device having a structure in which an external connection portion can easily be connected and a method for manufacturing the light-emitting device. A light-emitting device includes a lower support 110, a base insulating film 112 over the lower support 110 which has a through-hole 130, a light-emitting element 127 over the base insulating film 112, and an upper support 122 over the light-emitting element 127. An electrode 131 is provided in the through-hole 130, and the external connection terminal 132 electrically connected to the electrode 131 is provided below the base insulating film 112. The external connection terminal 132 is electrically connected to the external connection portion 133 and functions as a terminal that inputs a signal or a power supply into the light-emitting device. This light-emitting device has a structure in which an external connection portion can easily be connected.
    Type: Application
    Filed: July 12, 2012
    Publication date: November 1, 2012
    Applicant: Semiconductor Energy Laboratory Co., LTD.
    Inventors: Kaoru HATANO, Satoshi SEO
  • Publication number: 20120264346
    Abstract: To provide an electroluminescent device in which an element substrate provided with a light-emitting element and a sealing substrate are bonded to each other without causing thermal damage to the light-emitting element and which is formed using an electroluminescent material. A sheet 108 in which layers of at least two different kinds of metals are stacked is formed in a peripheral portion of one or both of the element substrate 102 provided with an EL element 104 and a sealing substrate 106 bonded to the element substrate 102 so as to face each other. Further, the sheet is irradiated with a focused beam, and the irradiation portion of the sheet is heated, whereby at least two kinds of metals are alloyed, and the element substrate and the sealing substrate are bonded to each other by heat generated in the alloying.
    Type: Application
    Filed: April 12, 2012
    Publication date: October 18, 2012
    Inventors: Akihisa Shimomura, Kaoru Hatano
  • Publication number: 20120256208
    Abstract: A light-emitting device and a lighting device each of which includes a plurality of light-emitting elements exhibiting light with different wavelengths are provided. The light-emitting device and the lighting device each have an element structure in which each of the light-emitting elements emits only light with a desired wavelength, and thus the light-emitting elements have favorable color purity. In the light-emitting element emitting light (?R) with the longest wavelength of the light with different wavelengths, the optical path length from a reflective electrode to a light-emitting layer (a light-emitting region) included in an EL layer is set to ?R/4 and the optical path length from the reflective electrode to a semi-transmissive and semi-reflective electrode is set to ?R/2.
    Type: Application
    Filed: April 4, 2012
    Publication date: October 11, 2012
    Inventor: Kaoru Hatano
  • Patent number: 8284369
    Abstract: Provided is a flexible light-emitting device including: a base insulating film; a thin film transistor formed over a first surface of the base insulating film; an interlayer insulating film formed over the first surface of the base insulating film with the thin film transistor interposed therebetween; a first pixel electrode formed on a second surface of the base insulating film opposite to the first surface; an electroluminescent layer formed on the second surface of the base insulating film with the first pixel electrode interposed therebetween; a second pixel electrode formed on the second surface of the base insulating film with the first pixel electrode and the electroluminescent layer interposed therebetween; and a wiring electrically connected to a semiconductor layer of the thin film transistor in a contact hole provided in the interlayer insulating film and electrically connected to the first pixel electrode in a through-hole penetrating through at least the interlayer insulating film and the base in
    Type: Grant
    Filed: August 11, 2009
    Date of Patent: October 9, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Akihiro Chida, Kaoru Hatano, Takaaki Nagata, Satoshi Seo
  • Publication number: 20120241799
    Abstract: It is an object to provide a flexible light-emitting device with long lifetime in a simple way and to provide an inexpensive electronic device with long lifetime using the flexible light-emitting device. A flexible light-emitting device is provided, which includes a substrate having flexibility and a light-transmitting property with respect to visible light; a first adhesive layer over the substrate; an insulating film containing nitrogen and silicon over the first adhesive layer; a light-emitting element including a first electrode, a second electrode facing the first electrode, and an EL layer between the first electrode and the second electrode; a second adhesive layer over the second electrode; and a metal substrate over the second adhesive layer, wherein the thickness of the metal substrate is 10 ?m to 200 ?m inclusive. Further, an electronic device using the flexible light-emitting device is provided.
    Type: Application
    Filed: May 25, 2012
    Publication date: September 27, 2012
    Applicant: Semiconductor Energy Laboratoy Co., Ltd.
    Inventors: Kaoru HATANO, Satoshi SEO, Takaaki NAGATA, Tatsuya OKANO
  • Publication number: 20120217516
    Abstract: Provided is a highly reliable light-emitting device in which a light-emitting element is prevented from being damaged when external physical force is applied. The light-emitting device includes a light-emitting element formed over a first substrate, including a first electrode layer, a light-emitting layer, and a second electrode layer; a structure body formed over the first substrate; a second substrate provided to face the first substrate; and a bonding layer provided between the first substrate and the second substrate. The light-emitting layer is separated by the structure body. By strengthening adhesion between the structure body and the bonding layer, or between the structure body and the second electrode, the highly reliable light-emitting device in which damage of the light-emitting element is prevented can be provided.
    Type: Application
    Filed: February 24, 2012
    Publication date: August 30, 2012
    Inventors: Kaoru HATANO, Satoshi SEO, Akihiro CHIDA, Yoshiaki OIKAWA
  • Publication number: 20120206038
    Abstract: Provided is a lighting device capable of displaying a desired image without an element such as a TFT in a light-emitting portion of the lighting device. The lighting device includes a light-emitting portion in which a plurality of light-emitting segments arranged in matrix and each including an EL layer between a pair of electrodes (an anode and a cathode). The area of a light-emitting region is varied as appropriate so as to obtain a desired light-emitting luminance from the light-emitting region in each the light-emitting segment; accordingly, gray-scale display can be performed and a still image can be displayed only by 1 external power source.
    Type: Application
    Filed: February 7, 2012
    Publication date: August 16, 2012
    Inventor: Kaoru Hatano
  • Publication number: 20120187394
    Abstract: A light energy reuse type display device, light-emitting device, and lighting device with low power consumption, which efficiently convert light emitted from a light source (including light emission from a light-emitting element) into electric power, are provided. A photoelectric conversion element interposed between a pair of substrates functions as a color filter (a colored layer); thus, light emitted from a light source (including light emission from a light-emitting element) is efficiently converted into electric power, and a light energy reuse type display device, light-emitting device, and lighting device with low power consumption can be provided.
    Type: Application
    Filed: January 18, 2012
    Publication date: July 26, 2012
    Inventors: Kaoru HATANO, Satoshi SEO, Yoshiaki OIKAWA
  • Patent number: 8222666
    Abstract: An object is to provide a light-emitting device having a structure in which an external connection portion can easily be connected and a method for manufacturing the light-emitting device. A light-emitting device includes a lower support 110, a base insulating film 112 over the lower support 110 which has a through-hole 130, a light-emitting element 127 over the base insulating film 112, and an upper support 122 over the light-emitting element 127. An electrode 131 is provided in the through-hole 130, and the external connection terminal 132 electrically connected to the electrode 131 is provided below the base insulating film 112. The external connection terminal 132 is electrically connected to the external connection portion 133 and functions as a terminal that inputs a signal or a power supply into the light-emitting device. This light-emitting device has a structure in which an external connection portion can easily be connected.
    Type: Grant
    Filed: December 11, 2009
    Date of Patent: July 17, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kaoru Hatano, Satoshi Seo
  • Patent number: 8203686
    Abstract: To improve the response speed of liquid crystal molecules when a liquid crystal display device is changed from an on state to an off state. A liquid crystal display device that includes a liquid crystal material between a substrate and a counter substrate; a plurality of pixels over the substrate; and a microstructure which is provided over the substrate, is in contact with the liquid crystal material, and includes a movable portion and a method for manufacturing the liquid crystal display device are provided. The microstructure may include a lower electrode, an upper electrode, and a space between the lower electrode and the upper electrode. The microstructure is manufactured through the steps of forming the lower electrode over the substrate, forming a sacrificial layer over the lower electrode, forming the upper electrode over the sacrificial layer, and removing the sacrificial layer by etching to form the space.
    Type: Grant
    Filed: February 3, 2009
    Date of Patent: June 19, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kaoru Hatano, Takeshi Nishi, Shuji Fukai
  • Publication number: 20120146025
    Abstract: A light energy reuse type light-emitting device with low power consumption is provided by converting light from a light-emitting device into electric power efficiently for reuse. Also, a light energy reuse type light-emitting device with high yield is provided. A light-blocking film of the light-emitting device is replaced to a photoelectric conversion element, so that light is converted into electric power. That is, conventionally, light is not emitted in a portion of a light-blocking film. In the disclosed invention, light which is not emitted can be converted into electric power by a photoelectric conversion element, and can be reused. Therefore, a light-emitting device with low power consumption is realized.
    Type: Application
    Filed: November 29, 2011
    Publication date: June 14, 2012
    Inventors: Satoshi Seo, Kaoru Hatano
  • Patent number: 8188474
    Abstract: It is an object to provide a flexible light-emitting device with long lifetime in a simple way and to provide an inexpensive electronic device with long lifetime using the flexible light-emitting device. A flexible light-emitting device is provided, which includes a substrate having flexibility and a light-transmitting property with respect to visible light; a first adhesive layer over the substrate; an insulating film containing nitrogen and silicon over the first adhesive layer; a light-emitting element including a first electrode, a second electrode facing the first electrode, and an EL layer between the first electrode and the second electrode; a second adhesive layer over the second electrode; and a metal substrate over the second adhesive layer, wherein the thickness of the metal substrate is 10 ?m to 200 ?m inclusive. Further, an electronic device using the flexible light-emitting device is provided.
    Type: Grant
    Filed: October 14, 2009
    Date of Patent: May 29, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kaoru Hatano, Satoshi Seo, Takaaki Nagata, Tatsuya Okano
  • Publication number: 20120126693
    Abstract: A highly reliable lighting device is provided at low cost by using a simple structure and a simple process. A lighting device with improved convenience, which has a shape suitable for a purpose and can respond to diversified applications is provided. A light-emitting panel which includes a light-emitting element provided over a flexible substrate and including an electroluminescent (EL) layer (the panel is also referred to as an “EL film”) is put in a glass housing. The EL film is flexible and thus can be provided in a variety of forms in accordance with the shape of the glass housing.
    Type: Application
    Filed: November 3, 2011
    Publication date: May 24, 2012
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., Ltd.
    Inventors: Satoshi SEO, Masaaki HIROKI, Kaoru HATANO, Ikuko KAWAMATA
  • Publication number: 20120061652
    Abstract: In a semiconductor device including an organic layer containing a light-emitting substance between a first electrode connected to a source or drain electrode layer of an enhancement-type transistor that has a channel formation region using an oxide semiconductor and a second electrode overlapped with the first electrode, an active, electrically conductive material which produces a hydrogen ion or a hydrogen molecule by reducing an impurity including a hydrogen atom (e.g., moisture) is excluded from the second electrode. The semiconductor device including an oxide semiconductor is formed using especially an inert, electrically conductive material which hardly causes production a hydrogen ion or a hydrogen molecule by reacting with water. Specifically, the semiconductor device is formed using any of a metal, an alloy of metals, and a metal oxide each having a higher oxidation-reduction potential than the standard hydrogen electrode.
    Type: Application
    Filed: September 9, 2011
    Publication date: March 15, 2012
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Nozomu Sugisawa, Kaoru Hatano, Satoshi Seo
  • Publication number: 20120061664
    Abstract: Provided is a method to manufacture a light-emitting display device in which a contact hole for the electrical connection of the pixel electrode and one of the source and drain electrode of a transistor and a contact hole for the processing of a semiconductor layer are formed simultaneously. The method contributes to the reduction of a photography step. The transistor includes an oxide semiconductor layer where a channel formation region is formed.
    Type: Application
    Filed: September 7, 2011
    Publication date: March 15, 2012
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei Yamazaki, Kaoru Hatano
  • Publication number: 20120061671
    Abstract: To provide a highly reliable semiconductor device including an oxide semiconductor. Further to provide a highly reliable light-emitting device including an oxide semiconductor. A second electrode sealed together with a semiconductor element including an oxide semiconductor hardly becomes inactive. A hydrogen ion and/or a hydrogen molecule produced by reaction of the active second electrode with moisture remaining in the semiconductor device and/or moisture entering from the outside of the device increase the carrier concentration in the oxide semiconductor, which causes a reduction in the reliability of the semiconductor device. An adsorption layer of a hydrogen ion and/or a hydrogen molecule may be provided on the other surface side of the second electrode having one surface in contact with the organic layer. Further, an opening which a hydrogen ion and/or a hydrogen molecule passes through may be provided for the second electrode.
    Type: Application
    Filed: September 1, 2011
    Publication date: March 15, 2012
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventor: Kaoru Hatano
  • Publication number: 20120061673
    Abstract: It is an object of one embodiment of the present invention to manufacture a light-emitting display device by simplifying a manufacturing process of a transistor, without an increase in the number of steps as well as the number of photomasks as compared to those in the conventional case. A step for processing a semiconductor layer into an island shape is omitted by using a high-resistance oxide semiconductor which is intrinsic or substantially intrinsic for the semiconductor layer, used to form transistors. Formation of an opening in the semiconductor layer or an insulating layer formed over the semiconductor layer and etching of an unnecessary portion of the semiconductor layer are performed at the same time; thus, the number of photolithography steps is reduced.
    Type: Application
    Filed: September 7, 2011
    Publication date: March 15, 2012
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei Yamazaki, Jun Koyama, Kaoru Hatano
  • Publication number: 20120062814
    Abstract: Provided is a method to manufacture a liquid crystal display device in which a contact hole for the electrical connection of the pixel electrode and one of the source and drain electrode of a transistor and a contact hole for the processing of a semiconductor layer are formed simultaneously. The method contributes to the reduction of a photography step. The transistor includes an oxide semiconductor layer where a channel formation region is formed.
    Type: Application
    Filed: September 7, 2011
    Publication date: March 15, 2012
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei Yamazaki, Kaoru Hatano