Abstract: A method of manufacturing a semiconductor device forms an interlayer insulating film on a nickel silicide layer formed on a substrate, and forms a through hole by performing dry etching using a resist pattern, formed on the interlayer insulating film, as a mask and then removing the resist pattern by ashing. A wafer after an ashing process is cleaned using a cleaning solution comprised of aqueous solution having a content of the fluorine-containing compound of 1.0 to 5.0 mass %, a content of chelating agent of 0.2 to 5.0 mass %, and a content of the organic acid salt of 0.1 to 3.0 mass %.

Abstract: The present invention provides a composition for photoresist stripping solution which shows a superior stripping property of photoresists and damaged photoresist layers remained after dry etching in the fabrication process of semiconductor circuit devices, without attacking new wiring materials and interlayer insulating film materials, as well as a process of stripping of photoresists and damaged photoresist layers. The composition for photoresist stripping solution which contains at least one of acetylene alcohol compounds and organic sulfonic acid compounds, and at least one of polyvalent alcohols and their derivatives is used.

Abstract: A composition for removing a photoresist residue and a polymer residue remaining on a semiconductor substrate after dry etching and after ashing is provided, the composition containing at least one type of fluorine compound, at least one type of organic acid, at least one type of organic amine, and water, the composition having a pH of 4 to 7, and the total content of components other than water being 0.3 to 30 mass % of the entire composition.

Abstract: A method of manufacturing a semiconductor device forms an interlayer insulating film on a nickel silicide layer formed on a substrate, and forms a through hole by performing dry etching using a resist pattern, formed on the interlayer insulating film, as a mask and then removing the resist pattern by ashing. A wafer after an ashing process is cleaned using a cleaning solution comprised of aqueous solution having a content of the fluorine-containing compound of 1.0 to 5.0 mass %, a content of chelating agent of 0.2 to 5.0 mass %, and a content of the organic acid salt of 0.1 to 3.0 mass %.

Abstract: A method of manufacturing a semiconductor device forms an interlayer insulating film on a nickel silicide layer formed on a substrate, and forms a through hole by performing dry etching using a resist pattern, formed on the interlayer insulating film, as a mask and then removing the resist pattern by ashing. A wafer after an ashing process is cleaned using a cleaning solution comprised of aqueous solution having a content of the fluorine-containing compound of 1.0 to 5.0 mass %, a content of chelating agent of 0.2 to 5.0 mass %, and a content of the organic acid salt of 0.1 to 3.0 mass %.

Abstract: The present invention provides a composition for photoresist stripping solution which shows a superior stripping property of photoresists and damaged photoresist layers remained after dry etching in the fabrication process of semiconductor circuit devices, without attacking new wiring materials and interlayer insulating film materials, as well as a process of stripping of photoresists and damaged photoresist layers. The composition for photoresist stripping solution which contains at least one of acetylene alcohol compounds and organic sulfonic acid compounds, and at least one of polyvalent alcohols and their derivatives is used.

Abstract: A composition for removing a photoresist residue and a polymer residue remaining on a semiconductor substrate after dry etching and after ashing is provided, the composition containing at least one type of fluorine compound, at least one type of organic acid, at least one type of organic amine, and water, the composition having a pH of 4 to 7, and the total content of components other than water being 0.3 to 30 mass % of the entire composition.

Abstract: A method of manufacturing a semiconductor device forms an interlayer insulating film on a nickel silicide layer formed on a substrate, and forms a through hole by performing dry etching using a resist pattern, formed on the interlayer insulating film, as a mask and then removing the resist pattern by ashing. A wafer after an ashing process is cleaned using a cleaning solution comprised of aqueous solution having a content of the fluorine-containing compound of 1.0 to 5.0 mass %, a content of chelating agent of 0.2 to 5.0 mass %, and a content of the organic acid salt of 0.1 to 3.0 mass %.