Abstract: A main object of the present technology is to provide a makeup protection cosmetic for use by spraying over makeup, which is a makeup protection cosmetic that is excellent in terms of the fineness of the mist upon use by spraying and yet has an excellent makeup protection effect. The present technology can provide a multi-layer makeup protection cosmetic for use by spraying over makeup, containing the following components (A) to (C): component (A): an oil-soluble film-forming agent, component (B): 40 to 95 mass % of water, and component (C): a volatile oil agent.

Abstract: Objects of the present invention are to provide a light-emitting element that does not readily deteriorate, a light-emitting device and an electronic device that do not readily deteriorate, and a method of fabricating the light-emitting element that does not readily deteriorate. A light-emitting element having an EL layer between a pair of electrodes is covered with a layer containing an inorganic compound and halogen atoms or a layer containing an organic compound, an inorganic compound, and halogen atoms, whereby deterioration by moisture penetration can be inhibited. Thus, a light-emitting element with a long life can be obtained.

Abstract: The dead time is secured stably in a semiconductor drive circuit for switching devices using a wide band gap semiconductor. The drain terminal of the switching device of an upper arm is connected to the positive terminal of a first power supply, the source terminal of the switching device of a lower arm is connected to the negative terminal of the first power supply, and the source terminal of the switching device of the upper arm is connected with the drain terminal of the switching device of the lower arm. A gate drive circuit provided for each switching device includes an FET circuit and a parallel circuit made of a parallel connection of a first resistor and a first capacitor and having a first terminal connected to the gate terminal of the switching device.

Abstract: The dead time is secured stably in a semiconductor drive circuit for switching devices using a wide band gap semiconductor. The drain terminal of the switching device of an upper arm is connected to the positive terminal of a first power supply, the source terminal of the switching device of a lower arm is connected to the negative terminal of the first power supply, and the source terminal of the switching device of the upper arm is connected with the drain terminal of the switching device of the lower arm. A gate drive circuit provided for each switching device includes an FET circuit and a parallel circuit made of a parallel connection of a first resistor and a first capacitor and having a first terminal connected to the gate terminal of the switching device.

Abstract: The present invention provides a light-emitting device including a light-emitting element over a substrate, the light-emitting element is partitioned from an adjacent light-emitting element by a partition wall, the light-emitting element comprising a first electrode, a layer formed over the first electrode, a light-emitting layer formed over the layer and a second electrode formed over the light-emitting layer, the layer contains an inorganic compound, an organic compound and a halogen atom, the partition wall contains the inorganic compound and the organic compound, and the layer. The light-emitting device provides higher reliability and fewer defects.

Abstract: It is an object of the present invention to provide a light emitting element with low drive voltage. In addition, it is another object to provide a light emitting device having the light emitting element. Further in addition, it is another object to provide an electric appliance which has a light emitting element with low drive voltage. A light emitting element of the present invention comprises a pair of electrodes, a layer containing a light emitting element and a layer containing a mixture material which contains a conductive material formed from an inorganic compound and an insulating material formed from an inorganic compound, which are interposed between the pair of electrodes, wherein the layer containing the mixture material has a resistivity of 50,000 to 1,000,000 ohm cm, preferably, 200,000 to 500,000 ohm cm. The drive voltage of the light emitting element can be lowered with the foregoing structure.

Abstract: It is an object of the present invention to collect a scarce metal such as iridium from a light-emitting element which is no longer used. A method for collecting a metal is provided in which an organic metal compound which can emit visible light from a triplet excited state at room temperature is heated, or an EL layer of a light-emitting layer containing an organic metal compound which can emit visible light from a triplet excited state at room temperature is dissolved in a solvent to form a solution, and the solution is heated, irradiated with microwaves or treated with acid water. According to the above method, resources of metals such as iridium or platinum, which are scarce metals, can be utilized efficiently.

Abstract: The present invention provides a light-emitting device including a light-emitting element over a substrate, the light-emitting element is partitioned from an adjacent light-emitting element by a partition wall, the light-emitting element comprising a first electrode, a layer formed over the first electrode, a light-emitting layer formed over the layer and a second electrode formed over the light-emitting layer, the layer contains an inorganic compound, an organic compound and a halogen atom, the partition wall contains the inorganic compound and the organic compound, and the layer. The light-emitting device provides higher reliability and fewer defects.

Abstract: It is an object to provide an organic field effect transistor including an electrode which can reduce an energy barrier at an interface between a conductive layer and a semiconductor layer, and a semiconductor device including the organic field effect transistor. A composite layer containing an organic compound and an inorganic compound is provided in at least part of one of a source electrode and a drain electrode in an organic field effect transistor, and as the organic compound, a carbazole derivative represented by the general formula (1) is used. By providing the composite layer in at least part of one of the source electrode and the drain electrode, an energy barrier at an interface between a conductive layer and a semiconductor layer can be reduced.

Abstract: A manufacturing method of a semiconductor device capable of efficiently inspecting whether a metal silicide layer is sufficiently formed is provided. The manufacturing method is provided with the steps of forming a metal layer over a semiconductor layer containing silicon; forming a metal silicide layer over a surface of the semiconductor layer by heating the semiconductor layer and the metal layer; generating image data by performing color imaging of the metal silicide layer from above the metal silicide layer; calculating saturation of the metal silicide layer by processing the image data; and judging the formation amount of the metal silicide layer on the basis of the calculated saturation.

Abstract: Objects of the present invention are to provide a light-emitting element that does not readily deteriorate, a light-emitting device and an electronic device that do not readily deteriorate, and a method of fabricating the light-emitting element that does not readily deteriorate. A light-emitting element having an EL layer between a pair of electrodes is covered with a layer containing an inorganic compound and halogen atoms or a layer containing an organic compound, an inorganic compound, and halogen atoms, whereby deterioration by moisture penetration can be inhibited. Thus, a light-emitting element with a long life can be obtained.

Abstract: The present invention provides a light-emitting element and a light-emitting device which have high contrast, and specifically, provides a light-emitting device whose contrast is enhanced, not by using a polarizing plate but using a conventional electrode material. Reflection of external light is suppressed by provision of a light-absorbing layer included between a non-light-transmitting electrode and a light-emitting layer. As the light-absorbing layer, a layer is used, which is obtained by adding a halogen atom into a layer including an organic compound and a metal oxide. Further, the light-absorbing layer is formed also over a region in which a thin film transistor for driving a light-emitting element is formed, a region in which a wiring is formed, and the like, and thus light is extracted from the side opposite to the region in which the TFT is formed, thereby reducing reflection of external light.

Abstract: Objects of the present invention are to provide a light-emitting element that does not readily deteriorate, a light-emitting device and an electronic device that do not readily deteriorate, and a method of fabricating the light-emitting element that does not readily deteriorate. A light-emitting element having an EL layer between a pair of electrodes is covered with a layer containing an inorganic compound and halogen atoms or a layer containing an organic compound, an inorganic compound, and halogen atoms, whereby deterioration by moisture penetration can be inhibited. Thus, a light-emitting element with a long life can be obtained.

Abstract: Objects are to solve inhibition of miniaturization of a memory element and complexity of a manufacturing process thereof, and to provide a nonvolatile memory device and a semiconductor device each having the memory device, in which data can be additionally written except at the time of manufacture and in which forgery or the like caused by rewriting of data can be prevented, and a memory device and a semiconductor device that are inexpensive and nonvolatile. The present invention provides a semiconductor device that includes a plurality of memory elements, in each of which a first conductive layer, a second conductive layer disposed beside the first conductive layer, and a mixed film that are disposed over the same insulating film. The mixed film contains an inorganic compound, an organic compound, and a halogen atom and is disposed between the first conductive layer and the second conductive layer.