Abstract: When pressure in a chamber is once reduced lower than that when a flash of light is emitted and is maintained, after a flash lamp irradiates a semiconductor wafer accommodated in the chamber with the flash of light, a portion in the chamber, where gas is liable to remain, is eliminated. Then, when a flow rate of nitrogen gas to be supplied into the chamber is increased to discharge gas in the chamber, particles flying in the chamber due to flash irradiation can be smoothly discharged. As a result, the particles flying in the chamber can be prevented from being attached to an additional semiconductor wafer.

Abstract: When pressure in a chamber is once reduced lower than that when a flash of light is emitted and is maintained, after a flash lamp irradiates a semiconductor wafer accommodated in the chamber with the flash of light, a portion in the chamber, where gas is liable to remain, is eliminated. Then, when a flow rate of nitrogen gas to be supplied into the chamber is increased to discharge gas in the chamber, particles flying in the chamber due to flash irradiation can be smoothly discharged. As a result, the particles flying in the chamber can be prevented from being attached to an additional semiconductor wafer.

Abstract: Light is applied for preheating from a halogen lamp to a lower surface of a semiconductor wafer supported on a susceptor within a chamber. Thereafter, flash light is applied for flash heating from a flash lamp to an upper surface of the semiconductor wafer. Treatment gas supplied from a gas supply source is heated by a heater, and supplied into the chamber. A flow amount control valve is provided to increase a flow amount of the treatment gas supplied into the chamber. Contaminants discharged from a film of the semiconductor wafer during heat treatment are discharged to the outside of the chamber with a gas flow formed by a large amount of high-temperature treatment gas supplied into the chamber to reduce contamination inside the chamber.

Abstract: Light is applied for preheating from a halogen lamp to a lower surface of a semiconductor wafer supported on a susceptor within a chamber. Thereafter, flash light is applied for flash heating from a flash lamp to an upper surface of the semiconductor wafer. Treatment gas supplied from a gas supply source is heated by a heater, and supplied into the chamber. A flow amount control valve is provided to increase a flow amount of the treatment gas supplied into the chamber. Contaminants discharged from a film of the semiconductor wafer during heat treatment are discharged to the outside of the chamber with a gas flow formed by a large amount of high-temperature treatment gas supplied into the chamber to reduce contamination inside the chamber.

Abstract: An acceleration sensor has a pair of main surface protection members arranged at one end of both main surfaces of a piezoelectric oscillation element, and spaced from the main surfaces through a pair of main surface spacer members. An end surface protection member is arranged on an end surface at the other end of the main surface protection members by having an interval between the end surface protection member and the piezoelectric oscillation element, through a pair of end surface spacer members. A pair of side surface protection members is arranged at one end of the both side surfaces of the piezoelectric vibration element, the pair of main surface protection members, the end surface protection member, the pair of main surface spacer members, and a pair of side surface spacer members arranged on both side surfaces of the end surface spacer members.

Abstract: An electronic component 3 with a shielding function whose upper surface is held at a reference potential, an electronic component 13, and a semiconductor component 4 are mounted on a wiring board 2, and are covered with an insulating resin portion 5 while a conductive layer 6 is formed on an upper surface of the insulating resin portion 5. The conductive layer 6 is held at the reference potential by being connected to a portion, which is held at the reference potential, of the electronic component 3 with a shielding function exposed from the insulating resin portion 5. There can be provided a small-sized circuit module superior in an electromagnetic shielding function.

Abstract: A sensor module includes a substrate having a cavity in a surface thereof; a first sensor inside the cavity; a second sensor inside the cavity; and a lid body sealing the cavity and including an internal surface. The second sensor includes a first electrode located on an internal surface of the lid body and a second electrode located in the cavity.

Abstract: An acceleration sensor has a pair of main surface protection members arranged at one end of both main surfaces of a piezoelectric oscillation element, and spaced from the main surfaces through a pair of main surface spacer members. An end surface protection member is arranged on an end surface at the other end of the main surface protection members by having an interval between the end surface protection member and the piezoelectric oscillation element, through a pair of end surface spacer members. A pair of side surface protection members is arranged at one end of the both side surfaces of the piezoelectric vibration element, the pair of main surface protection members, the end surface protection member, the pair of main surface spacer members, and a pair of side surface spacer members arranged on both side surfaces of the end surface spacer members.

Abstract: A sensor module includes a substrate having a cavity in a surface thereof; a first sensor inside the cavity; a second sensor inside the cavity; and a lid body sealing the cavity and including an internal surface. The second sensor includes a first electrode located on an internal surface of the lid body and a second electrode located in the cavity.

Abstract: An electronic component 3 with a shielding function whose upper surface is held at a reference potential, an electronic component 13, and a semiconductor component 4 are mounted on a wiring board 2, and are covered with an insulating resin portion 5 while a conductive layer 6 is formed on an upper surface of the insulating resin portion 5. The conductive layer 6 is held at the reference potential by being connected to a portion, which is held at the reference potential, of the electronic component 3 with a shielding function exposed from the insulating resin portion 5. There can be provided a small-sized circuit module superior in an electromagnetic shielding function.

Abstract: A sensor substrate 1 having on its lower surface a surface acoustic wave element 2 for detecting pressure is mounted on a supporting substrate 6 through a sealing member 4 surrounding a sensor section 2. A sealing space S is formed by the sensor substrate 1, the supporting substrate 6, and the sealing member 4, and the surface acoustic wave element 2 for detecting pressure is sealed hermetically in the sealing space S. Reliability can be enhanced by protecting the surface acoustic wave element 2 from the external environment.

Abstract: Thickness of a pressure-detecting piezoelectric substrate (2) that is thinner than that of a supporting piezoelectric substrate (3) and that has a surface acoustic wave element for pressure detection (7a) on its lower surface is mounted on the supporting piezoelectric substrate (3) having a surface acoustic wave element for reference (4a) on its upper surface. A sealing member (5) is provided between the supporting piezoelectric substrate (3) and the pressure-detecting piezoelectric substrate (1). The surface acoustic wave element for pressure detection (7a) and the surface acoustic wave element for reference (4a) can be disposed in a space (S) enclosed with the pressure-detecting piezoelectric substrate (1) and the sealing member (5). It is possible to provide a small-sized pressure sensor device (1) that can perform temperature compensation and that has high reliability.

Abstract: Thickness of a pressure-detecting piezoelectric substrate (2) that is thinner than that of a supporting piezoelectric substrate (3) and that has a surface acoustic wave element for pressure detection (7a) on its lower surface is mounted on the supporting piezoelectric substrate (3) having a surface acoustic wave element for reference (4a) on its upper surface. A sealing member (5) is provided between the supporting piezoelectric substrate (3) and the pressure-detecting piezoelectric substrate (1). The surface acoustic wave element for pressure detection (7a) and the surface acoustic wave element for reference (4a) can be disposed in a space (S) enclosed with the pressure-detecting piezoelectric substrate (1) and the sealing member (5). It is possible to provide a small-sized pressure sensor device (1) that can perform temperature compensation and that has high reliability.

Abstract: A sensor substrate 1 having on its lower surface a surface acoustic wave element 2 for detecting pressure is mounted on a supporting substrate 6 through a sealing member 4 surrounding a sensor section 2. A sealing space S is formed by the sensor substrate 1, the supporting substrate 6, and the sealing member 4, and the surface acoustic wave element 2 for detecting pressure is sealed hermetically in the sealing space S. Reliability can be enhanced by protecting the surface acoustic wave element 2 from the external environment.

Abstract: The present invention relates to a novel compound having hypoxanthine base represented by the following formula: ##STR1## as well as to use of said compound and process for producing said compound.The novel compound of the present invention has an immunosuppressive and antiviral actions and is expected to be useful as a medical drug.