Abstract: A manufacturing method of a semiconductor device including a protecting element with a p-n junction which can be formed in the same process as that of a p-channel junction FET while the junction FET is formed in simple manufacturing process is provided. In the method of manufacturing semiconductor device composed of compound semiconductor having a p-channel FET and protective element, an n-type channel layer 2, n+-type contact layer 3, n-type semiconductor layer 5, p-type channel layer 7, p+-type contact layer 8 are laminated on a substrate 1 to form a semiconductor laminate portion 10. A portion of the semiconductor laminate portion 10 is removed by etching to expose the n+-type contact layer 3 and gate electrode 13 of a junction p-channel FET 22 is formed on the surface of the exposed n+-type contact layer 3. A protective element 23 is formed by a portion of the semiconductor 10.

Abstract: A manufacturing method of a semiconductor device including a protecting element with a p-n junction which can be formed in the same process as that of a p-channel junction FET while the junction FET is formed in simple manufacturing process is provided. In the method of manufacturing semiconductor device composed of compound semiconductor having a p-channel FET and protective element, an n-type channel layer 2, n+-type contact layer 3, n-type semiconductor layer 5, p-type channel layer 7, p+-type contact layer 8 are laminated on a substrate 1 to form a semiconductor laminate portion 10. A portion of the semiconductor laminate portion 10 is removed by etching to expose the n+-type contact layer 3 and gate electrode 13 of a junction p-channel FET 22 is formed on the surface of the exposed n+-type contact layer 3. A protective element 23 is formed by a portion of the semiconductor 10.