Patents by Inventor Kaoru Mizutani

Kaoru Mizutani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7463395
    Abstract: A method for recording information into a rewritable thermal label of a non-contact type by irradiation with a laser beam is provided. When a prescribed drawing is conducted by irradiation with a laser beam focused on the rewritable thermal label of a non-contact type using an optical scanning apparatus, the optical scanning apparatus is driven continuously without activating oscillation for the laser beam, and the drawing is conducted by activating the oscillation for the laser beam and scanning with the laser beam only when a locus of a laser beam which would be emitted if the oscillation for the laser beam would be active (a virtual laser beam) moves at a substantially uniform speed. Damages to the recording face of a recording medium after repeated recording and erasure of information by a non-contact method are decreased, and the recording medium can be used repeatedly 1,000 times or more.
    Type: Grant
    Filed: March 23, 2006
    Date of Patent: December 9, 2008
    Assignee: Lintec Corporation
    Inventors: Tetsuyuki Utagawa, Hiroaki Iwabuchi, Takehiko Nishikawa, Chisato Iino, Naoji Noda, Kaoru Mizutani
  • Publication number: 20060221424
    Abstract: A method for recording information into a rewritable thermal label of a non-contact type by irradiation with a laser beam is provided. When a prescribed drawing is conducted by irradiation with a laser beam focused on the rewritable thermal label of a non-contact type using an optical scanning apparatus, the optical scanning apparatus is driven continuously without activating oscillation for the laser beam, and the drawing is conducted by activating the oscillation for the laser beam and scanning with the laser beam only when a locus of a laser beam which would be emitted if the oscillation for the laser beam would be active (a virtual laser beam) moves at a substantially uniform speed. Damages to the recording face of a recording medium after repeated recording and erasure of information by a non-contact method are decreased, and the recording medium can be used repeatedly 1,000 times or more.
    Type: Application
    Filed: March 23, 2006
    Publication date: October 5, 2006
    Applicant: LINTEC CORPORATION
    Inventors: Tetsuyuki Utagawa, Hiroaki Iwabuchi, Takehiko Nishikawa, Chisato Iino, Naoji Noda, Kaoru Mizutani
  • Patent number: 6758222
    Abstract: A method of processing a substrate resists unwanted generation of plasma within a waiting chamber of a processing apparatus. The waiting chamber and a processing chamber are depressurized, and an untreated substrate is placed into the processing chamber, by raising a mounting table. A lower opening of the processing chamber is air-tightly closed by an edge portion of the mounting table. Thereafter, gas is introduced into the waiting chamber to increase the pressure therein, and in parallel with this, reactive gas is introduced into the processing chamber, but at a much lower pressure than that of the waiting chamber. Under this condition, high frequency power is applied to electrodes of the processing chamber to generate plasma therein. The likelihood of unwanted plasma generation in the waiting chamber is significantly reduced by the higher pressure therein, relative to the processing chamber.
    Type: Grant
    Filed: February 11, 2002
    Date of Patent: July 6, 2004
    Assignee: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Kazuto Obuchi, Kaoru Mizutani, Atsushi Matsushita
  • Patent number: 6656323
    Abstract: For obtaining uniformity of processing by controlling difference in impedance between a plurality of processing chambers, in a plasma processing apparatus, a conductor 7 of an attachment portion 3a and a conductor 7 of an attachment portion 3c are connected via a small width portion 7a, and therefore belt-like electrodes 11 and 13 are equal to each other in electrical potential. That is, the belt-like electrode 11 and the belt-like electrode 13 constitute a first electrode. Furthermore, to each of the belt-like electrodes 11 and 11 is applied high frequency power from a single high-frequency electric power supply 17 through a cable 18, and the belt-like electrodes 13 and 13 are connected (or short-circuited) to each other by means of a belt-like conductor 19 having a width substantially equal to that of the belt-like electrode 13.
    Type: Grant
    Filed: February 11, 2002
    Date of Patent: December 2, 2003
    Assignee: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Kazuto Obuchi, Kaoru Mizutani
  • Publication number: 20020108712
    Abstract: For obtaining uniformity of processing by controlling difference in impedance between a plurality of processing chambers, in a plasma processing apparatus, a conductor 7 of an attachment portion 3a and a conductor 7 of an attachment portion 3c are connected via a small width portion 7a, and therefore belt-like electrodes 11 and 13 are equal to each other in electrical potential. That is, the belt-like electrode 11 and the belt-like electrode 13 constitute a first electrode. Furthermore, to each of the belt-like electrodes 11 and 11 is applied high frequency power from a single high-frequency electric power supply 17 through a cable 18, and the belt-like electrodes 13 and 13 are connected (or short-circuited) to each other by means of a belt-like conductor 19 having a width substantially equal to that of the belt-like electrode 13.
    Type: Application
    Filed: February 11, 2002
    Publication date: August 15, 2002
    Applicant: Tokyo Ohka Kogyo Co., Ltd
    Inventors: Kazuto Obuchi, Kaoru Mizutani
  • Publication number: 20020108710
    Abstract: A method of processing a substrate resists unwanted generation of plasma within a waiting chamber of a processing apparatus. The waiting chamber and a processing chamber are depressurized, and an untreated substrate is placed into the processing chamber, by raising a mounting table. A lower opening of the processing chamber is air-tightly closed by an edge portion of the mounting table. Thereafter, gas is introduced into the waiting chamber to increase the pressure therein, and in parallel with this, reactive gas is introduced into the processing chamber, but at a much lower pressure than that of the waiting chamber. Under this condition, high frequency power is applied to electrodes of the processing chamber to generate plasma therein. The likelihood of unwanted plasma generation in the waiting chamber is significantly reduced by the higher pressure therein, relative to the processing chamber.
    Type: Application
    Filed: February 11, 2002
    Publication date: August 15, 2002
    Applicant: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Kazuto Obuchi, Kaoru Mizutani, Atsushi Matsushita
  • Patent number: 5352362
    Abstract: A brine recycling method where the used brine containing metal ions is added with a reaction agent to provide a agent-added brine. The reaction agent is of a kind which, when it is reacted with the metal ions, produces an insoluble substance, excluding an oxidant which, when reacted with oxygen, produces metal oxide. The agent-added brine is subsequently filtrated with the use of a microporous filtration membrane having an average pore size within the range of 0.005 to 1 .mu.m. A brine recycling apparatus is also disclosed which includes a filter module containing a microporous filtration membrane having an average pore size within the range of 0.005 to 1 .mu.m. The used brine is, after having been added with the reaction agent, supplied through a supply passage into the filter module. The filtrate is then removed from the filter module through a recovery passage.
    Type: Grant
    Filed: March 5, 1993
    Date of Patent: October 4, 1994
    Assignees: Showa Water Industries Co., Ltd, Kuraray Co., Ltd., Tokiwa Co., Ltd.
    Inventors: Masumi Mizutani, Kaoru Mizutani, Masaru Kawahashi, Yoshio Fujiwara