Patents by Inventor Kap Soo Yoon

Kap Soo Yoon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9755054
    Abstract: There are provided a method of manufacturing a thin film transistor and a display including a thin film transistor. The method of manufacturing a thin film transistor includes forming a barrier layer cm a substrate, forming a semiconductor layer on the barrier layer, forming a gate insulating layer on the semiconductor layer, forming a gate electrode on the gate insulating layer, forming an offset region on an external surface of the gate electrode through a plasma heat treatment process or an annealing process, etching, an offset region of the gate electrode, etching a gate insulating layer except for a portion of the gate insulating layer, positioned below the gate electrode, forming an interlayer insulating layer on the gate electrode, and etching, the interlayer insulating layer to form a source electrode and a drain electrode.
    Type: Grant
    Filed: December 1, 2015
    Date of Patent: September 5, 2017
    Assignee: Samsung Display Co., Ltd.
    Inventors: Myung Kwan Ryu, Ki Hwan Kim, Kap Soo Yoon, Hyeon Jun Lee, Jeong Uk Heo
  • Patent number: 9735143
    Abstract: A display substrate. The display substrate includes: a plurality of pixel units; a gate driving unit supplying a gate signal to the plurality of pixel units and including a plurality of shift register circuits which are dependently connected to each other; a vertical start line supplying a vertical start signal to the gate driving unit; and an electrostatic protection unit having two ends connected to different points of the vertical start line, the electrostatic protection unit including a plurality of back-to-back diodes connected in series with each other between the two ends. Each of the back-to-back diodes include a pair of diodes connected in parallel to each other in a bidirectional diode structure.
    Type: Grant
    Filed: June 30, 2015
    Date of Patent: August 15, 2017
    Assignee: Samsung Display Co., Ltd.
    Inventors: Young-Jin Kim, Byoung-Ju Kim, Jae-Hyun Park, Kap Soo Yoon, Jun Hyuck Jeon, Jeong Uk Heo
  • Publication number: 20170184915
    Abstract: A display device is provided. The display device includes a first base substrate, a gate line on the first base substrate and extending in a first direction, a data line disposed on the first base substrate, insulated from the gate line, and extending in a second direction, which crosses the first direction, a switch on the first base substrate and electrically connected to the gate line and the data line, an insulating layer on the switch, a first electrode on the insulating layer, a light-shielding conductive layer directly contacting the first electrode and overlapping the switch, and a second electrode insulated from the first electrode and the light-shielding conductive layer, at least partially overlapping the first electrode, and electrically connected to the switch.
    Type: Application
    Filed: August 11, 2016
    Publication date: June 29, 2017
    Inventors: Dong Ju YANG, Seul Ki KIM, Hyun Jung LEE, Hyo Jin KIM, Kap Soo YOON, Jeong Hyun LEE, Yun Seok HAN, Jeong Uk HEO
  • Patent number: 9647243
    Abstract: A display apparatus includes a pixel part disposed in a display area of a base substrate, including a switching element connected to a signal line, a pixel electrode connected to the switching element and a common electrode that overlaps the pixel electrode, a plurality of fan-out lines disposed in a peripheral area of the base substrate that are connected to the signal line of the display area, a plurality of pads disposed in the peripheral area of the base substrate that are respectively connected to end portions of the fan-out lines, an organic layer that covers the switching element of the display area and that extends from the display area to a portion of the fan-out lines, and an electrode pattern that overlaps the fan-out lines in a boundary portion of the organic layer.
    Type: Grant
    Filed: March 14, 2014
    Date of Patent: May 9, 2017
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Soon-Wook Hong, Seung-Sok Son, Yeon-Kyu Moon, Jae-Hyun Park, Kap-Soo Yoon, Jin-Won Lee
  • Publication number: 20170102574
    Abstract: A display device is provided. The display device includes: a first substrate that comprises a first base substrate, an insulating layer located on the first base substrate, and a barrier layer located on the insulating layer; a second substrate that faces the first substrate; a liquid crystal layer that is located between the first substrate and the second substrate; and a first spacer that is located between the first substrate and the second substrate and is in contact with the first substrate, wherein the first substrate further comprises a second spacer that is located on the barrier layer and overlaps with the first spacer.
    Type: Application
    Filed: September 6, 2016
    Publication date: April 13, 2017
    Inventors: Hyun KIM, Seul Ki KIM, Seung Ha CHOI, Yun Seok HAN, Kap Soo YOON, Jeong Uk HEO
  • Publication number: 20170097528
    Abstract: The exemplary embodiments relate generally to a display device that may include: a first substrate and a second substrate, each including a transparent encapsulation area; an outer sealant along a side of the transparent encapsulation area; a pattern part disposed on the first substrate and extending in a direction parallel to the outer sealant; and a transparent sealant adjacent to the pattern part and extending in a direction parallel to the pattern part, and a manufacturing method thereof.
    Type: Application
    Filed: September 8, 2016
    Publication date: April 6, 2017
    Inventors: Hyoung-Joon KIM, Hyo Jin KIM, Kap Soo YOON, Jeong Hyun LEE, Tae Hee LEE, So Young JUN, Soong Won CHO, Jeong Uk HEO
  • Publication number: 20170077246
    Abstract: A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.
    Type: Application
    Filed: November 4, 2016
    Publication date: March 16, 2017
    Inventors: Pil-Sang YUN, Ki-Won KIM, Hye-Young RYU, Woo-Geun LEE, Seung-Ha CHOI, Jae-Hyoung YOUN, Kyoung-Jae CHUNG, Young-Wook LEE, Je-Hun LEE, Kap-Soo YOON, Do-Hyun KIM, Dong-Ju YANG, Young-Joo CHOI
  • Publication number: 20170075174
    Abstract: A liquid crystal display includes a first substrate including: a display area including a plurality of pixels on the first substrate, a non-display area which is disposed on an outside of the display area and in which a dummy wire is disposed on the first substrate, and an image input hole which is defined therein in the non-display area and in which an image input device is disposed, a second substrate facing the first substrate and including a display area and a non-display area corresponding to those of the first substrate, a liquid crystal layer interposed between the first and second substrates, and a sealant which is in the non-display area of the first and second substrates and seals the liquid crystal layer between the first and second substrates. The dummy wire is disposed near the image input hole.
    Type: Application
    Filed: January 15, 2016
    Publication date: March 16, 2017
    Inventors: Tae Hee LEE, Hyoung Joon KIM, Hyo Jin KIM, Kap Soo YOON, Jeong Uk HEO, Ji Yun HONG
  • Patent number: 9570621
    Abstract: The present invention discloses a thin film transistor (TFT), a method for manufacturing the TFT, and a display substrate using the TFT that may prevent degradation of the characteristics of an oxide semiconductor contained in the TFT by blocking external light from entering a channel region of the oxide semiconductor. The TFT includes an oxide semiconductor layer; a protective layer overlapping a channel region of the oxide semiconductor layer; an opaque layer disposed between the oxide semiconductor layer and the protective layer; a source electrode contacting a first side of the oxide semiconductor layer; a drain electrode contacting a second side of the oxide semiconductor layer and facing the source electrode across the channel region; a gate electrode to apply an electric field to the oxide semiconductor layer; and a gate insulating layer disposed between the gate electrode and the oxide semiconductor layer.
    Type: Grant
    Filed: December 23, 2010
    Date of Patent: February 14, 2017
    Assignee: Samsung Display Co., Ltd.
    Inventors: Ki-Hun Jeong, Do-Hyun Kim, Dong-Hoon Lee, Kap-Soo Yoon, Jae-Ho Choi, Sung-Hoon Yang, Pil-Sang Yun, Seung-Mi Seo
  • Publication number: 20170040349
    Abstract: A TFT array substrate includes a semiconductive oxide layer disposed on an insulating substrate and including a channel portion, a gate electrode overlapping the semiconductive oxide layer, a gate insulating layer interposed between the semiconductive oxide layer and the gate electrode, and a passivation layer disposed on the semiconductive oxide layer and the gate electrode. At least one of the gate insulating layer and the passivation layer includes an oxynitride layer, and the oxynitride layer has a higher concentration of oxygen than that of nitrogen in a location of the oxynitride layer closer to the semiconductive oxide layer.
    Type: Application
    Filed: October 24, 2016
    Publication date: February 9, 2017
    Inventors: Je-Hun LEE, Ki-Won KIM, Do-Hyun KIM, Woo-Geun LEE, Kap-Soo YOON
  • Patent number: 9524992
    Abstract: A thin film transistor array panel and a manufacturing method thereof according to an exemplary embodiment of the present invention form a contact hole in a second passivation layer formed of an organic insulator, protect a side of the contact hole by covering with a protection member formed of the same layer as the first field generating electrode and formed of a transparent conductive material, and etch the first passivation layer below the second passivation layer using the protection member as a mask. Therefore, it is possible to prevent the second passivation layer formed of an organic insulator from being overetched while etching the insulating layer below the second passivation layer so that the contact hole is prevented from being made excessively wide.
    Type: Grant
    Filed: October 5, 2015
    Date of Patent: December 20, 2016
    Assignee: Samsung Display Co., Ltd.
    Inventors: Hye Young Ryu, Hee Jun Byeon, Woo Geun Lee, Kap Soo Yoon, Yoon Ho Kim, Chun Won Byun
  • Patent number: 9520412
    Abstract: A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.
    Type: Grant
    Filed: July 13, 2015
    Date of Patent: December 13, 2016
    Assignee: Samsung Display Co., Ltd.
    Inventors: Pil-Sang Yun, Ki-Won Kim, Hye-Young Ryu, Woo-Geun Lee, Seung-Ha Choi, Jae-Hyoung Youn, Kyoung-Jae Chung, Young-Wook Lee, Je-Hun Lee, Kap-Soo Yoon, Do-Hyun Kim, Dong-Ju Yang, Young-Joo Choi
  • Patent number: 9502445
    Abstract: A TFT array substrate includes a semiconductive oxide layer disposed on an insulating substrate and including a channel portion, a gate electrode overlapping the semiconductive oxide layer, a gate insulating layer interposed between the semiconductive oxide layer and the gate electrode, and a passivation layer disposed on the semiconductive oxide layer and the gate electrode. At least one of the gate insulating layer and the passivation layer includes an oxynitride layer, and the oxynitride layer has a higher concentration of oxygen than that of nitrogen in a location of the oxynitride layer closer to the semiconductive oxide layer.
    Type: Grant
    Filed: July 27, 2015
    Date of Patent: November 22, 2016
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Je-Hun Lee, Ki-Won Kim, Do-Hyun Kim, Woo-Geun Lee, Kap-Soo Yoon
  • Patent number: 9443877
    Abstract: A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.
    Type: Grant
    Filed: July 14, 2015
    Date of Patent: September 13, 2016
    Assignee: Samsung Display Co., Ltd.
    Inventors: Pil-Sang Yun, Ki-Won Kim, Hye-Young Ryu, Woo-Geun Lee, Seung-Ha Choi, Jae-Hyoung Youn, Kyoung-Jae Chung, Young-Wook Lee, Je-Hun Lee, Kap-Soo Yoon, Do-Hyun Kim, Dong-Ju Yang, Young-Joo Choi
  • Publication number: 20160218197
    Abstract: There are provided a method of manufacturing a thin film transistor and a display including a thin film transistor. The method of manufacturing a thin film transistor includes forming a barrier layer cm a substrate, forming a semiconductor layer on the barrier layer, forming a gate insulating layer on the semiconductor layer, forming a gate electrode on the gate insulating layer, forming an offset region on an external surface of the gate electrode through a plasma heat treatment process or an annealing process, etching, an offset region of the gate electrode, etching a gate insulating layer except for a portion of the gate insulating layer, positioned below the gate electrode, forming an interlayer insulating layer on the gate electrode, and etching, the interlayer insulating layer to form a source electrode and a drain electrode.
    Type: Application
    Filed: December 1, 2015
    Publication date: July 28, 2016
    Inventors: Myung Kwan RYU, Ki Hwan KIM, Kap Soo YOON, Hyeon Jun LEE, Jeong Uk HEO
  • Publication number: 20160217756
    Abstract: A display substrate. The display substrate includes: a plurality of pixel units; a gate driving unit supplying a gate signal to the plurality of pixel units and including a plurality of shift register circuits which are dependently connected to each other; a vertical start line supplying a vertical start signal to the gate driving unit; and an electrostatic protection unit having two ends connected to different points of the vertical start line, the electrostatic protection unit including a plurality of back-to-back diodes connected in series with each other between the two ends. Each of the back-to-back diodes include a pair of diodes connected in parallel to each other in a bidirectional diode structure.
    Type: Application
    Filed: June 30, 2015
    Publication date: July 28, 2016
    Inventors: Young-Jin KIM, Byoung-Ju Kim, Jae-Hyun PARK, Kap Soo YOON, Jun Hyuck JEON, Jeong Uk HEO
  • Patent number: 9281406
    Abstract: A method of fabricating a thin-film transistor substrate includes disposing an oxide semiconductor layer on an insulating substrate, performing a thermal treatment process to the oxide semiconductor layer, providing an alignment mark, a source electrode, a drain electrode, and an oxide semiconductor pattern, after the thermal treatment process, providing a gate electrode, after the thermal treatment process, and providing a pixel electrode connected to the drain electrode.
    Type: Grant
    Filed: August 13, 2014
    Date of Patent: March 8, 2016
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Ki-Won Kim, Kap Soo Yoon, Jiyun Hong
  • Publication number: 20160027805
    Abstract: A thin film transistor array panel and a manufacturing method thereof according to an exemplary embodiment of the present invention form a contact hole in a second passivation layer formed of an organic insulator, protect a side of the contact hole by covering with a protection member formed of the same layer as the first field generating electrode and formed of a transparent conductive material, and etch the first passivation layer below the second passivation layer using the protection member as a mask. Therefore, it is possible to prevent the second passivation layer formed of an organic insulator from being overetched while etching the insulating layer below the second passivation layer so that the contact hole is prevented from being made excessively wide.
    Type: Application
    Filed: October 5, 2015
    Publication date: January 28, 2016
    Inventors: Hye Young RYU, Hee Jun BYEON, Woo Geun LEE, Kap Soo YOON, Yoon Ho KIM, Chun Won BYUN
  • Publication number: 20160020331
    Abstract: A display substrate is provided. The display substrate includes a gate interconnection disposed on an insulating substrate, an oxide semiconductor pattern disposed on the gate interconnection and including an oxide semiconductor, and a data interconnection disposed on the oxide semiconductor pattern to interconnect the gate interconnection. The oxide semiconductor pattern includes a first oxide semiconductor pattern having a first oxide and a first element and a second oxide semiconductor pattern having a second oxide.
    Type: Application
    Filed: September 18, 2015
    Publication date: January 21, 2016
    Inventors: Ki-Won KIM, Kap-Soo YOON, Do-Hyun KIM, Hyun-Jung LEE
  • Patent number: 9224900
    Abstract: A touch sensitive display device utilizing infrared ray sensing transistors. The transistors are configured, and comprise specified materials, to allow them to be formed with fewer photolithography processes, reducing cost and manufacturing time.
    Type: Grant
    Filed: October 6, 2010
    Date of Patent: December 29, 2015
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Ki-Hun Jeong, Sung-Hoon Yang, Kap-Soo Yoon, Kyung-Sook Jeon, Seung Mi Seo