Abstract: Disclosed is a ferroelectric tunnel junction device and memory cell, and relates to the technical field of ferroelectric tunnel junction devices, comprising a ferroelectric tunnel barrier layer; a first electrode layer on one side of the ferroelectric tunnel barrier layer; a second electrode layer on the other side of the ferroelectric tunnel barrier layer; and a first interfacial layer at the interface between the first electrode layer and the ferroelectric tunnel barrier layer. The first electrode layer comprises a first antiperovskite material and the first interfacial layer comprises a second antiperovskite material that differs from the first antiperovskite material in composition, and preferably in at least the occupancy of corner sites or the centre sites. Also disclosed is a memory cell comprising the ferroelectric tunnel junction device, wherein the data is recordable as a direction of electric polarisation of the ferroelectric tunnel barrier layer.

Abstract: The invention provides a magnetic device and memory cell, and relates to the field of magnetic devices for memory including perovskite-based electrode materials, comprising: a spacer layer; a first magnetic electrode layer located on one side of the spacer layer; and a second magnetic electrode layer located on the other side of the spacer layer; the spacer layer comprises a perovskite nitride material or perovskite oxynitride material; the first magnetic electrode layer and the second magnetic electrode layer respectively comprises a metallic antiperovskite nitride material; the relative net magnetization orientation of the first magnetic electrode layer and the second magnetic electrode layer is switchable between a parallel net magnetization state or an antiparallel net magnetization state to control a spin-polarised current therethrough; the memory cell is applied to a memory or storage device, comprising the magnetic device, wherein the data is recordable as a parallel or antiparallel net magnetization s

Abstract: The present invention provides a high-crystallinity barium titanate film structure, a method of preparation and an application thereof, and relates to the field of materials and devices. The method includes the steps of depositing, on a substrate, a barium titanate layer with a (001) or (111) crystal orientation by atomic layer deposition in a high vacuum environment and at a low temperature of 450° C. or below, wherein a Ba/Ti ratio in the barium titanate layer is 0.9-1.5; and performing plasma annealing treatment on the barium titanate layer at a low temperature of 450° C. or below without breaking vacuum to form a high-crystallinity barium titanate layer having the (001) or (111) crystal orientation. The film structure may further comprise top and bottom electrodes formed above and below the barium titanate layer. The present invention solves the problem that an existing method for obtaining a crystalline BTO film is not applicable to back-end of line (BEOL) integration processes.