Abstract: The invention provides the use of certain benzoic acid and benzamide compounds as modulators of enzymes histone acetyltransferases, which are involved in gene expression and cancer and also use of such compounds in the treatment of diseases due to defects in gene regulation predominantly cancer.

Abstract: The invention provides the use of certain benzoic acid and benzamide compounds as modulators of enzymes histone acetyltransferases, which are involved in gene expression and cancer and also use of such compounds in the treatment of diseases due to defects in gene regulation predominantly cancer.

Abstract: In this patent we describe the purification of prenylated benzophenones from the fruit rinds of Garcinia species and its evaluation as an inhibitor for Histone acetyltransferases p300 and PCAF. We have found that prenylated benzophenones are potent HAT inhibitors of p300 (IC50-1 ?M) and pCAF (IC50-15 ?M). The inhibitors significantly repress the p300 HAT dependent transcriptional activation from in vitro assembled chromatin template but had no effect on transcription from DNA. These results suggest that the compounds could be specific to HATs. Thus these compounds should be useful as biological switching molecule for evaluating the role of p300 and PCAF in cellular functions and may be useful as new chemical entities for the development of anticancer drugs.

Abstract: Disclosed are compounds of the formulae: and method of using the compounds to treat cancer, AIDS, HIV infection, and asthma.

Abstract: In this patent we describe the purification of prenylated benzophenones from the fruit rinds of Garcinia species and its evaluation as an inhibitor for Histone acetyltransferases p300 and PCAF. We have found that prenylated benzophenones are potent HAT inhibitors of p300 (IC50-1 ?M) and pCAF (IC50-15 ?M). The inhibitors significantly repress the p300 HAT dependent transcriptional activation from in vitro assembled chromatin template but had no effect on transcription from DNA. These results suggest that the compounds could be specific to HATs. Thus these compounds should be useful as biological switching molecule for evaluating the role of p300 and PCAF in cellular functions and may be useful as new chemical entities for the development of anticancer drugs.

Abstract: Disclosed are compounds of the formulae: and method of using the compounds to treat cancer, AIDS, HIV infection, and asthma.

Abstract: Compounds having the formula and derivatives thereof are used to inhibit histone acetyltransferases.

Abstract: Under the present invention, a layer of amorphous silicon is formed over a layer of gate dielectric. Over the layer of amorphous silicon, a gate cap dielectric is formed. The layer of amorphous silicon is then confined by at least one spacer, which is deposited under a low temperature process. Once the at least one spacer is in place, the amorphous silicon is exposed to a temperature sufficiently high to convert the amorphous silicon to polysilicon.

Abstract: Under the present invention, a layer of amorphous silicon is formed over a layer of gate dielectric. Over the layer of amorphous silicon, a gate cap dielectric is formed. The layer of amorphous silicon is then confined by at least one spacer, which is deposited under a low temperature process. Once the at least one spacer is in place, the amorphous silicon is exposed to a temperature sufficiently high to convert the amorphous silicon to polysilicon. By waiting until the amorphous silicon is confined within the at least one spacer before converting it to polysilicon, the variation in gate length is reduced.

Abstract: In order to prevent abnormal oxidation of the side wall of a polycide gate conductor layer in the oxidation heat treatment process after the RIE processing of the polycide gate conductor layer in a semiconductor memory cell, the heat treatment for oxidizing the side wall of the polycide gate conductor layer is conducted in two steps with different conditions. By conducting the first heat treatment process in an inert atmosphere, a thin oxide film is formed on the side wall of the polycide tungsten/gate conductor layer. Then by conducting the second heat treatment process in an atmosphere with a strong oxidizing property, a thick oxide film without abnormal oxidation can be formed.

Abstract: In order to prevent abnormal oxidation of the side wall of a polycide gate conductor layer in the oxidation heat treatment process after the RIE processing of the polycide gate conductor layer in a semiconductor memory cell, the heat treatment for oxidizing the side wall of the polycide gate conductor layer is conducted in two steps with different conditions. By conducting the first heat treatment process in an inert atmosphere, a thin oxide film is formed on the side wall of the polycide tungsten/gate conductor layer. Then by conducting the second heat treatment process in an atmosphere with a strong oxidizing property, a thick oxide film without abnormal oxidation can be formed.

Abstract: The present invention is directed to a new soluble double metal salt of group IA and IIA of (−) hydroxycitric acid of general formula I: where X is IA group metal: Li or Na or K or Rb or Cs or Fr where Y is IIA group metal: Be or Mg or Ca or Sr or Ba or Ra where the concentration of X in the salt varies from 1.5-51.0%, the concentration of Y in the salts varies from 2.0-50.9%, the concentration of HCA in the salt varies from 31.0-93.0% depending on the nature of X and Y. This invention more particularly relates to new soluble double metal salt of group IA and IIA of (−) hydroxycitric acid of general formula II.

Abstract: The present invention is directed to a new soluble double metal salt of group IA and IIA of (-) hydroxycitric acid of general formula I:where X is IA group metal: Li or Na or K or Rb or Cs or Frwhere Y is IIA group metal: Be or Mg or Ca or Sr or Ba or Rawhere the concentration of X in the salt varies from 1.5-51.0%,the concentration of Y in the salts varies from 2.0-50.9%,the concentration of HCA in the salt varies from 31.0-93.0% depending on the nature of X and Y.This invention more particularly relates to new soluble double metal salt of group IA and IIA of (-) hydroxycitric acid of general formula II.

Abstract: A MOSFET device is formed on a P- doped semiconductor substrate with an N- well formed therein, with a pair of isolation regions formed in the N- well with a gate oxide layer formed above the N- well. An FET device is formed with source and drain regions within the N-well, and a gate electrode formed above the gate oxide layer aligned with the source and drain regions. The gate electrode comprises a stack of layers. A polysilicon layer is formed on the gate oxide layer. A tungsten nitride dopant barrier layer is formed upon the polysilicon layer having a thickness of from about 5 nm to about 20 nm, and a tungsten silicide layer is formed upon the tungsten nitride layer.

Abstract: Reduction of gate-induced-drain-leakage in metal oxide semiconductor (MOS) devices is achieved by performing an anneal in a non-oxidizing ambient. In one embodiment, the anneal is performed in a argon and/or ammonia ambients after gate sidewall oxidation that forms the spacers.

Abstract: A MOSFET device is formed on a P- doped semiconductor substrate with an N- well formed therein, with a pair of isolation regions formed in the N- well with a gate oxide layer formed above the N- well. An FET device is formed with source and drain regions within the N-well, and a gate electrode formed above the gate oxide layer aligned with the source and drain regions. The gate electrode comprises a stack of layers. A polysilicon layer is formed on the gate oxide layer. A tungsten nitride dopant barrier layer is formed upon the polysilicon layer having a thickness of from about 5 nm to about 20 nm, and a tungsten silicide layer is formed upon the tungsten nitride layer.

Abstract: Disclosed is a process fo fabrication of a MESFET in which starting with a GaAs substrate having a shallow N- layer covered with nitride, a submicron-wide dummy gate mask consisting of upper and lower portions made of dissimilar materials is formed. Multilayer organic and sidewall image transfer techniques are employed for forming the mask. The nitride is etched using the gate mask. N+ source/drain are formed by ion implantation. The lower portion of the gate mask is etched to expose the periphery of the nitride. Refractory metal for source/drain contacts is deposited. An oxide laeyr is deposited to passivate the source/drain contacts and to fully cover the exposed nitride periphery. The gate mask is removed. High temperature anneal is accomplished to simultaneously activate the N+ regions and anneal the contact metal. By RIE the exposed nitride removed leaving submicron spacers thereof. Gate metal is deposited in the gate region.

Abstract: Disclosed is a process of forming high density, planar, single- or multi-level wiring for a semiconductor integrated circuit chip. On the chip surface is provided a dual layer of an insulator and hardened photoresist having various sized openings (grooves for wiring and openings for contacts) therein in a pattern of the desired wiring. A conductive (e.g., metal) layer of a thickness equal to that of the insulator is deposited filling the grooves and contact openings. A sacrificial dual (lower and upper component) layer of (hardened) photoresist is formed filling the metal valleys and obtaining a substantially planar surface. The lower component layer is thin and conformal and has a higher etch rate than the upper component layer which is thick and nonconformal. By reactive ion etching the sacrificial layer is removed leaving resist plugs in the metal valleys.

Abstract: This invention relates to thin (g-Ge.sub.x -Se.sub.1--x) positive ionresists and thin (g-Ge.sub.x -Se.sub.1--x) with absorbed or chemically bonded silver as a negative ionresist, which when exposed to H.sup.+ ion beams and subsequently developed, for example by alkaline solutions, have a useful differential dissolution rate, when comparing exposed and unexposed areas, with excellent resolution. The ionresist materials and processes of the invention are useful, for example, in forming solid-state electronic articles.