Abstract: The present invention relates to regimens for the treatment of angiogenic eye disorders such as nAMD, characterized by high doses of aflibercept and extended intervals between doses.

Abstract: The present invention relates to treatment regimens characterized by high doses of aflibercept (e.g., 8 mg) and extended intervals between doses (e.g., 12 weeks) with improved visual and anatomic outcomes relative to treatment with lower doses such as 2 mg.

Abstract: The present invention relates to regimens for the treatment of angiogenic eye disorders such as DR and DME characterized by high doses of aflibercept and lengthening intervals between doses.

Abstract: The present invention provides methods for treating or preventing diabetic retinopathy, e.g., nonproliferative diabetic retinopathy, by sequentially administering multiple doses of a VEGF antagonist to a patient. The methods of the present invention include the administration of a 2 mg aflibercept by intravitreal injection q8 weeks after three or five initial monthly doses (2q8) or 2 mg q16 weeks after three initial monthly doses and one 8-week interval (2q16). Moreover, the present invention provides methods for reversing or halting the progression NPDR to PDR (e.g., such that the DRSS is reduced by 2 or 3 levels) or preventing the occurrence or reoccurrence of a vision threatening complication by administering aflibercept according to the dosing regimens set forth herein.

Abstract: The present invention provides methods for treating or preventing diabetic retinopathy, e.g., nonproliferative diabetic retinopathy, by sequentially administering multiple doses of a VEGF antagonist to a patient. The methods of the present invention include the administration of a 2 mg aflibercept by intravitreal injection q8 weeks after three or five initial monthly doses (2q8) or 2 mg q16 weeks after three initial monthly doses and one 8-week interval (2q16). Moreover, the present invention provides methods for reversing or halting the progression NPDR to PDR (e.g., such that the DRSS is reduced by 2 or 3 levels) or preventing the occurrence or reoccurrence of a vision threatening complication by administering aflibercept according to the dosing regimens set forth herein.

Abstract: The present invention provides methods for treating or preventing diabetic retinopathy, e.g., nonproliferative diabetic retinopathy, by sequentially administering multiple doses of a VEGF antagonist to a patient. The methods of the present invention include the administration of a 2 mg aflibercept by intravitreal injection q8 weeks after three or five initial monthly doses (2q8) or 2 mg q16 weeks after three initial monthly doses and one 8-week interval (2q16). Moreover, the present invention provides methods for reversing or halting the progression NPDR to PDR (e.g., such that the DRSS is reduced by 2 or 3 levels) or preventing the occurrence or reoccurrence of a vision threatening complication by administering aflibercept according to the dosing regimens set forth herein.

Abstract: Methods are provided for forming a nanostructure array. An example method includes providing a first layer, providing nanostructures dispersed in a solution comprising a liquid form of a spin-on-dielectric, wherein the nanostructures comprise a silsesquioxane ligand coating, disposing the solution on the first layer, whereby the nanostructures form a monolayer array on the first layer, and curing the liquid form of the spin-on-dielectric to provide a solid form of the spin-on-dielectric. Numerous other aspects are provided.

Abstract: Methods are provided for forming a nanostructure array. An example method includes providing a first layer, providing nanostructures dispersed in a solution comprising a liquid form of a spin-on-dielectric, wherein the nanostructures comprise a silsesquioxane ligand coating, disposing the solution on the first layer, whereby the nanostructures form a monolayer array on the first layer, and curing the liquid form of the spin-on-dielectric to provide a solid form of the spin-on-dielectric. Numerous other aspects are provided.

Abstract: Methods for forming or patterning nanostructure arrays are provided. The methods involve formation of arrays on coatings comprising nanostructure association groups, formation of arrays in spin-on-dielectrics, solvent annealing after nanostructure deposition, patterning using resist, and/or use of devices that facilitate array formation. Related devices for forming nanostructure arrays are also provided, as are devices including nanostructure arrays (e.g., memory devices).

Abstract: Methods for forming or patterning nanostructure arrays are provided. The methods involve formation of arrays on coatings comprising nanostructure association groups, formation of arrays in spin-on-dielectrics, solvent annealing after nanostructure deposition, patterning using resist, and/or use of devices that facilitate array formation. Related devices for forming nanostructure arrays are also provided, as are devices including nanostructure arrays (e.g., memory devices).

Abstract: Methods for forming or patterning nanostructure arrays are provided. The methods involve formation of arrays on coatings comprising nanostructure association groups, formation of arrays in spin-on-dielectrics, solvent annealing after nanostructure deposition, patterning using resist, and/or use of devices that facilitate array formation. Related devices for forming nanostructure arrays are also provided, as are devices including nanostructure arrays (e.g., memory devices).

Abstract: Methods for forming or patterning nanostructure arrays are provided. The methods involve formation of arrays on coatings comprising nanostructure association groups, patterning using resist, and/or use of devices that facilitate array formation. Related devices for forming nanostructure arrays are also provided, as are devices including nanostructure arrays (e.g., memory devices).

Abstract: Methods for forming or patterning nanostructure arrays are provided. The methods involve formation of arrays on coatings comprising nanostructure association groups, formation of arrays in spin-on-dielectrics, solvent annealing after nanostructure deposition, patterning using resist, and/or use of devices that facilitate array formation. Related devices for forming nanostructure arrays are also provided, as are devices including nanostructure arrays (e.g., memory devices).

Abstract: Methods for forming or patterning nanostructure arrays are provided. The methods involve formation of arrays on coatings comprising nanostructure association groups, formation of arrays in spin-on-dielectrics, solvent annealing after nanostructure deposition, patterning using resist, and/or use of devices that facilitate array formation. Related devices for forming nanostructure arrays are also provided, as are devices including nanostructure arrays (e.g., memory devices). Methods for protecting nanostructures from fusion during high temperature processing are also provided.

Abstract: Methods for forming or patterning nanostructure arrays are provided. The methods involve formation of arrays on coatings comprising nanostructure association groups, patterning using resist, and/or use of devices that facilitate array formation. Related devices for forming nanostructure arrays are also provided, as are devices including nanostructure arrays (e.g., memory devices).

Abstract: Methods for forming or patterning nanostructure arrays are provided. The methods involve formation of arrays on coatings comprising nanostructure association groups, patterning using resist, and/or use of devices that facilitate array formation. Related devices for forming nanostructure arrays are also provided, as are devices including nanostructure arrays (e.g., memory devices).

Abstract: The invention provides a method for treating cancer in a human comprising administering to the human a dose of a pharmaceutical composition comprising (i) a pharmaceutically acceptable carrier and (ii) an adenoviral vector comprising a nucleic acid sequence encoding TNF-? operably linked to a promoter, wherein the dose comprises about 1×107 to about 4×1012 particle units (pu) of replication-deficient adenoviral vector, at least once in a therapeutic period comprising up to 10 weeks, whereby the cancer in human is treated. The invention further provides a method of treating a human for multiple tumors, wherein the method comprises contacting a first tumor with a dose of the pharmaceutical composition at least once in a therapeutic period comprising up to about 10 weeks, whereby the human is treated for the first tumor and one or more additional tumors.

Abstract: Methods and structures are provided for conformal lining of dual damascene structures in semiconductor devices that contain porous or low k dielectrics. Features, such as trenches and contact vias are formed in the dielectrics. The features are subjected to low-power plasma predeposition treatment to irregularities on the porous surfaces and/or reactively form an permeation barrier before a diffusion barrier material is deposited on the feature. The diffusion barrier may, for example, be deposited by CVD using metalorganic vapor reagents. The feature is then filled with copper metal and further processed to complete a dual damascene interconnect. The plasma predeposition treatment advantageously reduces the amount of permeation of the metalorganic reagent into the interlayer dielectric.

Abstract: The invention provides a method for treating cancer in a human comprising (a) administering to the human a dose of a pharmaceutical composition comprising (i) a pharmaceutically acceptable carrier and (ii) an adenoviral vector comprising a nucleic acid sequence encoding a human TNF-? and operably linked to a promoter, wherein the dose comprises about 4×107 to about 4×1012 particle units (pu) of adenoviral vector, at least once in a therapeutic period comprising up to about 10 weeks, (b) administering a dose of ionizing radiation to the human over the duration of the therapeutic period, and (c) administering a dose of one or more chemotherapeutics to the human over the duration of the therapeutic period, whereby the cancer in the human is treated.

Abstract: Methods and structures are provided for conformal lining of dual damascene structures in semiconductor devices that contain porous or low k dielectrics. Features, such as trenches and contact vias are formed in the dielectrics. The features are subjected to low-power plasma predeposition treatment to irregularities on the porous surfaces and/or reactively form an permeation barrier before a diffusion barrier material is deposited on the feature. The diffusion barrier may, for example, be deposited by CVD using metalorganic vapor reagents. The feature is then filled with copper metal and further processed to complete a dual damascene interconnect. The plasma predeposition treatment advantageously reduces the amount of permeation of the metalorganic reagent into the interlayer dielectric.