Patents by Inventor Karen Lynne Holloway

Karen Lynne Holloway has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • ‘Via first’ dual damascene process for copper metallization
    Patent number: 6576550
    Abstract: An interconnection pattern is formed over the surface of a silicon wafer in which both the vias and the trenches of the pattern are filled with copper. The process of filling the vias and trenches involves use of a silicon nitride film as an etch stop and the filling of the vias with an anti-reflection coating.
    Type: Grant
    Filed: June 30, 2000
    Date of Patent: June 10, 2003
    Assignee: Infineon, AG
    Inventors: Gabriela Brase, Uwe Paul Schroeder, Karen Lynne Holloway