Patents by Inventor Karen M. Winchester

Karen M. Winchester has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Etch stop for use in etching of silicon oxide
    Patent number: 6555896
    Abstract: A etch stop layer for use in a silicon oxide dry fluorine etch process is made of silicon nitride with hydrogen incorporated in it either in the form of N—H bonds, Si—H bonds, or entrapped free hydrogen. The etch stop layer is made by either increasing the NH3 flow, decreasing the SiH4 flow, decreasing the nitrogen flow, or all three, in a standard PECVD silicon nitride fabrication process. The etch stop can alternatively be made by pulsing the RF field in either a PECVD process or an LPCVD process.
    Type: Grant
    Filed: December 21, 2000
    Date of Patent: April 29, 2003
    Assignee: Micron Technology, Inc.
    Inventors: David A. Cathey, J. Brett Rolfson, Valerie A. Ward, Karen M. Winchester
  • Etch stop use in etching of silicon oxide
    Publication number: 20010003679
    Abstract: A etch stop layer for use in a silicon oxide dry fluorine etch process is made of silicon nitride with hydrogen incorporated in it either in the form of N—H bonds, O—H bonds, or entrapped free hydrogen. The etch stop layer is made by either increasing the NH3 flow, decreasing the SiH4 flow, decreasing the nitrogen flow, or all three, in a standard PECVD silicon nitride fabrication process. The etch stop can alternatively be made by pulsing the RF field in either a PECVD process or an LPCVD process.
    Type: Application
    Filed: December 21, 2000
    Publication date: June 14, 2001
    Inventors: David A. Cathey, J. Brett Rolfson, Valerie A. Ward, Karen M. Winchester
  • Etch stop for use in etching of silicon oxide
    Patent number: 6232218
    Abstract: A etch stop layer for use in a silicon oxide dry fluorine etch process is made of silicon nitride with hydrogen incorporated in it either in the form of N—H bonds, O—H bonds, or entrapped free hydrogen. The etch stop layer is made by either increasing the NH3 flow, decreasing the SiH4 flow, decreasing the nitrogen flow, or all three, in a standard PECVD silicon nitride fabrication process. The etch stop can alternatively be made by pulsing the RF field in either a PECVD process or an LPCVD process.
    Type: Grant
    Filed: August 19, 1999
    Date of Patent: May 15, 2001
    Assignee: Micron Technology, Inc.
    Inventors: David A. Cathey, J. Brett Rolfson, Valerie A. Ward, Karen M. Winchester
  • Etch stop for use in etching of silicon oxide
    Patent number: 6222257
    Abstract: A etch stop layer for use in a silicon oxide dry fluorine etch process is made of silicon nitride with hydrogen incorporated in it either in the form of N—H bonds, Si—H bonds, or entrapped free hydrogen. The etch stop layer is made by either increasing the NH3 flow, decreasing the SiH4 flow, decreasing the nitrogen flow, or all three, in a standard PECVD silicon nitride fabrication process. The etch stop can alternatively be made by pulsing the RF field in either a PECVD process or an LPCVD process.
    Type: Grant
    Filed: August 6, 1999
    Date of Patent: April 24, 2001
    Assignee: Micron Technology, Inc.
    Inventors: David A. Cathey, J. Brett Rolfson, Valerie A. Ward, Karen M. Winchester
  • Etch stop for use in etching of silicon oxide
    Patent number: 6013943
    Abstract: A etch stop layer for use in a silicon oxide dry fluorine etch process is made of silicon nitride with hydrogen incorporated in it either in the form of N--H bonds, O--H bonds, or entrapped free hydrogen. The etch stop layer is made by either increasing the NH.sub.3 flow, decreasing the SiH.sub.4 flow, decreasing the nitrogen flow, or all three, in a standard PECVD silicon nitride fabrication process. The etch stop can alternatively be made by pulsing the RF field in either a PECVD process or an LPCVD process.
    Type: Grant
    Filed: May 5, 1997
    Date of Patent: January 11, 2000
    Assignee: Micron Technology, Inc.
    Inventors: David A. Cathey, J. Brett Rolfson, Valerie A. Ward, Karen M. Winchester
  • Etch stop for use in etching of silicon oxide
    Patent number: 6004875
    Abstract: A etch stop layer for use in a silicon oxide dry fluorine etch process is made of silicon nitride with hydrogen incorporated in it either in the form of N--H bonds, O--H bonds, or entrapped free hydrogen. The etch stop layer is made by either increasing the NH.sub.3 flow, decreasing the SiH.sub.4 flow, decreasing the nitrogen flow, or all three, in a standard PECVD silicon nitride fabrication process. The etch stop can alternatively be made by pulsing the RF field in either a PECVD process or an LPCVD process.
    Type: Grant
    Filed: November 15, 1995
    Date of Patent: December 21, 1999
    Assignee: Micron Technology, Inc.
    Inventors: David A. Cathey, J. Brett Rolfson, Valerie A. Ward, Karen M. Winchester