Patents by Inventor Karen P. Madden

Karen P. Madden has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of information transfer using optical zones
    Patent number: 6766382
    Abstract: A method of transmitting data from a host computer to a portable information device is disclosed. Optical pulses are displayed by illuminating an area of pixels, or optical zone, on a display monitor. Time series of optical pulses are displayed, including a bit stream that provides clocking information displayed within an optical zone concurrently with a data bit stream encoded using a standard encoding scheme (such as a serial or parallel transmission scheme or a combination thereof), and then detecting and downloading the bit stream data by using a suitably configured sensing device connected to a portable information device. If the display monitor is a color display monitor, brightness of each primary color may be used as an independent transmission channel. In addition, multiple optical zones may be used to transmit data, which allows the present invention to be used with monochrome display monitors.
    Type: Grant
    Filed: June 28, 2000
    Date of Patent: July 20, 2004
    Assignee: International Business Machines Corporation
    Inventors: Robert B. Madden, Karen P. Madden
  • Process for treating a semiconductor substrate
    Patent number: 6354309
    Abstract: Semiconductor substrates are contacted with a deionized water solution containing an acidic material.
    Type: Grant
    Filed: September 29, 2000
    Date of Patent: March 12, 2002
    Assignee: International Business Machines Corporation
    Inventors: Russell H. Arndt, Glenn Walton Gale, Frederick William Kern, Jr., Karen P. Madden, Harald F. Okorn-Schmidt, George Francis Ouimet, Jr., Dario Salgado, Ryan Wayne Wuthrich
  • Selective etching of silicate
    Patent number: 6254796
    Abstract: A silicate glass is selectively etched employing a composition containing a fluoride containing compound and certain organic solvents. Preferred compositions also include water.
    Type: Grant
    Filed: December 29, 1998
    Date of Patent: July 3, 2001
    Assignee: International Business Machines Corporation
    Inventors: David L. Rath, Glenn W. Gale, Rangarajan Jagannathan, Kenneth J. McCullough, Karen P. Madden, Harald F. Okorn-Schmidt, Keith R. Pope
  • Removal of dielectric oxides
    Patent number: 6200891
    Abstract: Oxides such as those commonly used in interlevel dielectrics may be removed employing a liquid composition containing a fluoride-containing compound and an organic solvent. Preferred compositions are substantially nonaqueous and include an anhydride. Improved methods for selective removal of oxides, especially for removal of silicon oxides where pre-exposed (or conductive metal - containing) features are present, where metal (conductive metal - contaimg) features are to be exposed by the desired oxide removal, or where the silcon oxide otherwise contacts metal (or conductive metal - containing) features are provided.
    Type: Grant
    Filed: August 13, 1998
    Date of Patent: March 13, 2001
    Assignee: International Business Machines Corporation
    Inventors: Rangarajan Jagannathan, Karen P. Madden, Kenneth J. McCullough, Harald F. Okorn-Schmidt, Keith R. Pope, David L. Rath
  • Process for treating a semiconductor substrate
    Patent number: 6173720
    Abstract: Semiconductor substrates are contacted with a deionized water solution containing an acidic material.
    Type: Grant
    Filed: December 2, 1998
    Date of Patent: January 16, 2001
    Assignee: International Business Machines Corporation
    Inventors: Russell H. Arndt, Glenn Walton Gale, Frederick William Kern, Jr., Karen P. Madden, Harald F. Okorn-Schmidt, George Francis Ouimet, Jr., Dario Salgado, Ryan Wayne Wuthrich
  • Selective removal of etching residues
    Patent number: 6150282
    Abstract: Etching residue is selectively removed employing a substantially non-aqueous composition containing a fluoride containing compound and certain organic solvents. Preferred compositions also include an anhydride.
    Type: Grant
    Filed: November 13, 1997
    Date of Patent: November 21, 2000
    Assignee: International Business Machines Corporation
    Inventors: David L. Rath, Rangarajan Jagannathan, Kenneth J. McCullough, Harald F. Okorn-Schmidt, Karen P. Madden, Keith R. Pope
  • Removal of silicon oxide
    Patent number: 6117796
    Abstract: Silicon oxide is removed from an article employing a liquid composition containing a fluoride-containing compound, organic solvent, and water. The methods of the invention are especially useful for removal of silicon oxide formed by thermal oxidation of a silicon substrate.
    Type: Grant
    Filed: August 13, 1998
    Date of Patent: September 12, 2000
    Assignee: International Business Machines Corporation
    Inventors: Glenn W. Gale, Rangarajan Jagannathan, Karen P. Madden, Kenneth J. McCullough, Harald F. Okorn-Schmidt, Keith R. Pope, David L. Rath
  • Etching of silicon nitride
    Patent number: 6066267
    Abstract: Silicon nitride is etched employing a composition containing a fluoride containing compound, certain organic solvents, and water.
    Type: Grant
    Filed: June 29, 1999
    Date of Patent: May 23, 2000
    Assignee: International Business Machines Corporation
    Inventors: David L. Rath, Rangarajan Jagannathan, Kenneth J. McCullough, Harald F. Okorn-Schmidt, Karen P. Madden, Keith R. Pope
  • Process for removing etching residues, etching mask and silicon nitride and/or silicon dioxide
    Patent number: 6033996
    Abstract: Etching residue, etching mask and silicon nitride and/or silicon dioxide are etched or removed employing a composition containing a fluoride containing compound, water and certain organic solvents.
    Type: Grant
    Filed: November 13, 1997
    Date of Patent: March 7, 2000
    Assignee: International Business Machines Corporation
    Inventors: David L. Rath, Rangarajan Jagannathan, Kenneth J. McCullough, Harald F. Okorn-Schmidt, Karen P. Madden, Keith R. Pope
  • Etching of silicon nitride
    Patent number: 5965465
    Abstract: Silicon nitride is etched employing a composition containing a fluoride containing compound, certain organic solvents, and water.
    Type: Grant
    Filed: September 18, 1997
    Date of Patent: October 12, 1999
    Assignee: International Business Machines Corporation
    Inventors: David L. Rath, Rangarajan Jagannathan, Kenneth J. McCullough, Harald F. Okorn-Schmidt, Karen P. Madden, Keith R. Pope