Abstract: An electroetching method for removing excess silver-copper braze material from the edges of I/O pads during the manufacture of chip carriers for microelectronic devices, and the product thereby produced, are disclosed. The disclosed method is preferably self-limiting, such that braze material is preferentially removed from all regions of the assembly. The method is particularly useful for producing a desirable sidewall profile, size, and extent of coverage of the I/O pad for the fillet of braze material surrounding the base of pins in a pin grid array device. Agitation control is important for producing the desired uniformity and profile.