Abstract: The present invention provides a patterning process, which comprises step of forming a BPSG film on the under layer film by using a composition for forming a coating type BPSG film including a base polymer and an organic compound with a content of 25 parts by mass or more of the organic compound with respect to 100 parts by mass of the base polymer, the base polymer having a silicon containing unit, a boron containing unit and a phosphorus containing unit with a total content of the boron containing unit and the phosphorus containing unit being 10 mol % or more, the organic compound having two or more hydroxyl groups or carboxyl groups per one molecule.

Abstract: The present invention provides a patterning process, which comprises step of forming a BPSG film on the under layer film by using a composition for forming a coating type BPSG film including a base polymer and an organic compound with a content of 25 parts by mass or more of the organic compound with respect to 100 parts by mass of the base polymer, the base polymer having a silicon containing unit, a boron containing unit and a phosphorus containing unit with a total content of the boron containing unit and the phosphorus containing unit being 10 mol % or more, the organic compound having two or more hydroxyl groups or carboxyl groups per one molecule.

Abstract: An article including a microelectronic substrate is provided as an article usable during the processing of the microelectronic substrate. Such article includes a microelectronic substrate having a front surface, a rear surface opposite the front surface and a peripheral edge at boundaries of the front and rear surfaces. The front surface is a major surface of the article. A removable annular edge extension element having a front surface, a rear surface and an inner edge extending between the front and rear surfaces has the inner edge joined to the peripheral edge of the microelectronic substrate. In such way, a continuous surface is formed which includes the front surface of the edge extension element and the front surface of the microelectronic substrate, the continuous surface being substantially co-planar and flat where the peripheral edge is joined to the inner edge.

Abstract: A method of forming an image in a photoresist layer. The method includes, providing a substrate; forming the photoresist layer over the substrate; forming a contamination gettering topcoat layer over the photoresist layer, the contamination gettering topcoat layer including one or more polymers and one or more cation complexing agents; exposing the photoresist layer to actinic radiation through a photomask having opaque and clear regions, the opaque regions blocking the actinic radiation and the clear regions being transparent to the actinic radiation, the actinic radiation changing the chemical composition of regions of the photoresist layer exposed to the radiation forming exposed and unexposed regions in the photoresist layer; and removing either the exposed regions of the photoresist layer or the unexposed regions of the photoresist layer. The contamination gettering topcoat layer includes one or more polymers, one or more cation complexing agents and a casting solvent.

Abstract: The resist compositions having an acid sensitive imaging polymer and a radiation sensitive acid generator component comprising: (i) a first radiation sensitive acid generator selected from the group consisting of dissolution-inhibiting acid generators, and (ii) a second radiation sensitive acid generator selected from the group consisting of unprotected acidic group-functionalized acid generators and acid labile group-protected acidic group-functionalized radiation sensitive acid generators; enables formation of high sensitivity resists suitable for use in EPL, EUV, soft x-ray, and other low energy intensity lithographic imaging applications. The resist compositions may be useful in other lithographic processes as well.

Abstract: A barrier layer for fabricating at least one of a device and a mask includes a polymeric photoacid generator formed between a substrate and a resist layer. The barrier layer may be used, for example, in forming a resist image, and forming a patterned material feature on a substrate.