Patents by Inventor Karen Temple
Karen Temple has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7816068Abstract: A composition suitable for use as a planarizing underlayer in a multilayer lithographic process is disclosed. The inventive composition comprises a polymer containing heterocyclic aromatic moieties. In another aspect, the composition further comprises an acid generator. In yet another aspect, the composition further comprises a crosslinker. The inventive compositions provide planarizing underlayers having outstanding optical, mechanical and etch selectivity properties. The present invention also encompasses lithographic structures containing the underlayers prepared from the compositions of the present invention, methods of making such lithographic structures, and methods of using such lithographic structures to pattern underlying material layers on a substrate.Type: GrantFiled: October 26, 2007Date of Patent: October 19, 2010Assignee: International Business Machines CorporationInventors: Wu-Song S. Huang, Karen Temple, Pushkara R. Varanasi
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Patent number: 7807332Abstract: A composition suitable for use as a planarizing underlayer in a multilayer lithographic process is disclosed. The inventive composition comprises a polymer containing heterocyclic aromatic moieties. In another aspect, the composition further comprises an acid generator. In yet another aspect, the composition further comprises a crosslinker. The inventive compositions provide planarizing underlayers having outstanding optical, mechanical and etch selectivity properties. The present invention also encompasses lithographic structures containing the underlayers prepared from the compositions of the present invention, methods of making such lithographic structures, and methods of using such lithographic structures to pattern underlying material layers on a substrate.Type: GrantFiled: April 18, 2008Date of Patent: October 5, 2010Assignee: International Business Machines CorporationInventors: Wu-Song S. Huang, Karen Temple, Pushkara R. Varanasi
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Patent number: 7648820Abstract: Antireflective hardmask compositions and techniques for the use of antireflective hardmask compositions for processing of semiconductor devices are provided. In one aspect of the invention, an antireflective hardmask layer for lithography is provided. The antireflective hardmask layer comprises a carbosilane polymer backbone comprising at least one chromophore moiety and at least one transparent moiety; and a crosslinking component. In another aspect of the invention, a method for processing a semiconductor device is provided. The method comprises the steps of: providing a material layer on a substrate; forming an antireflective hardmask layer over the material layer. The antireflective hardmask layer comprises a carbosilane polymer backbone comprising at least one chromophore moiety and at least one transparent moiety; and a crosslinking component.Type: GrantFiled: December 21, 2006Date of Patent: January 19, 2010Assignee: International Business Machines CorporationInventors: Katherina Babich, Elbert Huang, Arpan P. Mahorowala, David R. Medeiros, Dirk Pfeiffer, Karen Temple
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Publication number: 20080213697Abstract: A composition suitable for use as a planarizing underlayer in a multilayer lithographic process is disclosed. The inventive composition comprises a polymer containing heterocyclic aromatic moieties. In another aspect, the composition further comprises an acid generator. In yet another aspect, the composition further comprises a crosslinker. The inventive compositions provide planarizing underlayers having outstanding optical, mechanical and etch selectivity properties. The present invention also encompasses lithographic structures containing the underlayers prepared from the compositions of the present invention, methods of making such lithographic structures, and methods of using such lithographic structures to pattern underlying material layers on a substrate.Type: ApplicationFiled: April 18, 2008Publication date: September 4, 2008Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Wu-Song S. Huang, Karen Temple, Pushkara R. Varanasi
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Patent number: 7375172Abstract: A composition suitable for use as a planarizing underlayer in a multilayer lithographic process is disclosed. The inventive composition comprises a polymer containing heterocyclic aromatic moieties. In another aspect, the composition further comprises an acid generator. In yet another aspect, the composition further comprises a crosslinker. The inventive compositions provide planarizing underlayers having outstanding optical, mechanical and etch selectivity properties. The present invention also encompasses lithographic structures containing the underlayers prepared from the compositions of the present invention, methods of making such lithographic structures, and methods of using such lithographic structures to pattern underlying material layers on a substrate.Type: GrantFiled: July 6, 2005Date of Patent: May 20, 2008Assignee: International Business Machines CorporationInventors: Wu-Song S. Huang, Karen Temple, Pushkara R. Varanasi
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Publication number: 20080044776Abstract: A composition suitable for use as a planarizing underlayer in a multilayer lithographic process is disclosed. The inventive composition comprises a polymer containing heterocyclic aromatic moieties. In another aspect, the composition further comprises an acid generator. In yet another aspect, the composition further comprises a crosslinker. The inventive compositions provide planarizing underlayers having outstanding optical, mechanical and etch selectivity properties. The present invention also encompasses lithographic structures containing the underlayers prepared from the compositions of the present invention, methods of making such lithographic structures, and methods of using such lithographic structures to pattern underlying material layers on a substrate.Type: ApplicationFiled: October 26, 2007Publication date: February 21, 2008Applicant: International Business Machines CorporationInventors: Wu-Song Huang, Karen Temple, Pushkara Varanasi
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Patent number: 7326442Abstract: An antireflective composition and a lithographic structure comprising a silicon-metal oxide, antireflective material derived from the composition. The antireflective composition comprises a polymer of formula I, wherein 1?x?2; 1?y?5; 1?0; m>0; n>0; R is a chromophore, M is a metal selected from Group IIIB to Group VIB, lanthanides, Group IIIA, Group IVA except silicon; and L is an optional ligand. The invention is also directed to a process of making a lithographic structure including a silicon-metal oxide, antireflective material.Type: GrantFiled: July 14, 2005Date of Patent: February 5, 2008Assignee: International Business Machines CorporationInventors: Katherina E. Babich, Sean D. Burns, Elbert E. Huang, Arpan P. Mahorowala, Dirk Pfeiffer, Karen Temple
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Publication number: 20070105363Abstract: Antireflective hardmask compositions and techniques for the use of antireflective hardmask compositions for processing of semiconductor devices are provided. In one aspect of the invention, an antireflective hardmask layer for lithography is provided. The antireflective hardmask layer comprises a carbosilane polymer backbone comprising at least one chromophore moiety and at least one transparent moiety; and a crosslinking component. In another aspect of the invention, a method for processing a semiconductor device is provided. The method comprises the steps of: providing a material layer on a substrate; forming an antireflective hardmask layer over the material layer. The antireflective hardmask layer comprises a carbosilane polymer backbone comprising at least one chromophore moiety and at least one transparent moiety; and a crosslinking component.Type: ApplicationFiled: December 21, 2006Publication date: May 10, 2007Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Katherina Babich, Elbert Huang, Arpan Mahorowala, David Medeiros, Dirk Pfeiffer, Karen Temple
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Patent number: 7172849Abstract: Antireflective hardmask compositions and techniques for the use of antireflective hardmask compositions for processing of semiconductor devices are provided. In one aspect of the invention, an antireflective hardmask layer for lithography is provided. The antireflective hardmask layer comprises a carbosilane polymer backbone comprising at least one chromophore moiety and at least one transparent moiety; and a crosslinking component. In another aspect of the invention, a method for processing a semiconductor device is provided. The method comprises the steps of: providing a material layer on a substrate; forming an antireflective hardmask layer over the material layer. The antireflective hardmask layer comprises a carbosilane polymer backbone comprising at least one chromophore moiety and at least one transparent moiety; and a crosslinking component.Type: GrantFiled: August 22, 2003Date of Patent: February 6, 2007Assignee: International Business Machines CorporationInventors: Katherina Babich, Elbert Huang, Arpan P. Mahorowala, David R. Medeiros, Dirk Pfeiffer, Karen Temple
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Publication number: 20070015083Abstract: An antireflective composition and a lithographic structure comprising a silicon-metal oxide, antireflective material derived from the composition. The antireflective composition comprises a polymer of formula I, wherein 1?x?2; 1?y?5; 1?0; m>0; n>0; R is a chromophore, M is a metal selected from Group IIIB to Group VIB, lanthanides, Group IIIA, Group IVA except silicon; and L is an optional ligand. The invention is also directed to a process of making a lithographic structure including a silicon-metal oxide, antireflective material.Type: ApplicationFiled: July 14, 2005Publication date: January 18, 2007Applicant: International Business Machines CorporationInventors: Katherina Babich, Sean Burns, Elbert Huang, Arpan Mahorowala, Dirk Pfeiffer, Karen Temple
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Publication number: 20070009830Abstract: A composition suitable for use as a planarizing underlayer in a multilayer lithographic process is disclosed. The inventive composition comprises a polymer containing heterocyclic aromatic moieties. In another aspect, the composition further comprises an acid generator. In yet another aspect, the composition further comprises a crosslinker. The inventive compositions provide planarizing underlayers having outstanding optical, mechanical and etch selectivity properties. The present invention also encompasses lithographic structures containing the underlayers prepared from the compositions of the present invention, methods of making such lithographic structures, and methods of using such lithographic structures to pattern underlying material layers on a substrate.Type: ApplicationFiled: July 6, 2005Publication date: January 11, 2007Applicant: International Business Machines CorporationInventors: Wu-Song Huang, Karen Temple, Pushkara Varanasi
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Publication number: 20050042538Abstract: Antireflective hardmask compositions and techniques for the use of antireflective hardmask compositions for processing of semiconductor devices are provided. In one aspect of the invention, an antireflective hardmask layer for lithography is provided. The antireflective hardmask layer comprises a carbosilane polymer backbone comprising at least one chromophore moiety and at least one transparent moiety; and a crosslinking component. In another aspect of the invention, a method for processing a semiconductor device is provided. The method comprises the steps of: providing a material layer on a substrate; forming an antireflective hardmask layer over the material layer. The antireflective hardmask layer comprises a carbosilane polymer backbone comprising at least one chromophore moiety and at least one transparent moiety; and a crosslinking component.Type: ApplicationFiled: August 22, 2003Publication date: February 24, 2005Applicant: International Business Machines CorporationInventors: Katherina Babich, Elbert Huang, Arpan Mahorowala, David Medeiros, Dirk Pfeiffer, Karen Temple