Abstract: A process for preparing a nanostructured assembly by annealing a composition comprising a block copolymer on a surface. The block copolymer includes a first block resulting from the polymerization of at least one cyclic monomer having a structure as described herein. The block copolymer also includes a second block that includes a vinyl aromatic monomer.

Abstract: The invention relates to a process that enables the creation of nanometric structures by self-assembly of block copolymers, at least one of the blocks of which results from the polymerization of monomers comprising at least one cyclic entity corresponding to the formula I. where X?Si(R1,R2); Ge(R1,R2) Z?Si(R3,R4); Ge(R3,R4); O; S; C(R3,R4) Y?O; S; C(R5,R6) T=O; S; C(R7,R8) R1, R2, R3, R4, R5, R6, R7, R8 are selected from hydrogen, linear, branched or cyclic alkyl groups, with or without heteroatoms, and aromatic groups with or without heteroatoms.

Abstract: The invention relates to a process that enables the creation of nanometric structures by self-assembly of block copolymers, at least one of the blocks of which is crystallizable or has at least one liquid crystal phase.

Abstract: A material (M) includes a substrate one of the surfaces of which is covered with a layer based on a block copolymer having a block (B) consisting of a polysaccharide and to its uses for electronics, in order to prepare organic electroluminescent diodes (OLEDs) or organic photovoltaic cells (OPV) or for designing detection devices (nanobiosensors, biochips).

Abstract: The invention relates to a process for the preparation, by spatial distribution of light intensity, of a surface in relief promoting order and spatial coherence serving as a guide for the organization, on nano- and micrometre scales, of an overlayer on the surface in particular of block copolymers.

Abstract: A method for making a crossbar array of crossed conductive or semi-conductive access lines on a substrate, the crossbar array including on a crossbar array insulator, in a plane parallel to the substrate, a first level of lines including a plurality of first lines parallel with each other made of a conductive or semi-conductive material; on the first level of lines, a second level of lines including a plurality of second lines parallel with each other made of a conductive or semi-conductive material, the second lines being substantially perpendicular to the first lines. The method includes forming, on the substrate, a first cavity of substantially rectangular shape; forming a second cavity of substantially rectangular shape superimposed to the first cavity, the first and second cavities intersecting each other perpendicularly so as to form a resultant cavity.

Abstract: A material (M) includes a substrate one of the surfaces of which is covered with a layer based on a block copolymer having a block (B) consisting of a polysaccharide and to its uses for electronics, in order to prepare organic electroluminescent diodes (OLEDs) or organic photovoltaic cells (OPV) or for designing detection devices (nanobiosensors, biochips).

Abstract: A method for making a crossbar array of crossed conductive or semi-conductive access lines on a substrate, the crossbar array including on a crossbar array insulator, in a plane parallel to the substrate, a first level of lines including a plurality of first lines parallel with each other made of a conductive or semi-conductive material; on the first level of lines, a second level of lines including a plurality of second lines parallel with each other made of a conductive or semi-conductive material, the second lines being substantially perpendicular to the first lines. The method includes forming, on the substrate, a first cavity of substantially rectangular shape; forming a second cavity of substantially rectangular shape superimposed to the first cavity, the first and second cavities intersecting each other perpendicularly so as to form a resultant cavity.

Abstract: A diblock copolymer layer comprising at least two polymers and having a lamellar structure perpendicularly to a substrate is deposited on a first gate insulator formed on the substrate. One of the polymers of the diblock copolymer layer is then eliminated to form parallel grooves in the copolymer layer. The grooves are filled by a first metallic or semi-conductor material and the rest of the copolymer layer is eliminated. A second dielectric material is deposited to form a second gate insulator. The second gate insulator of the floating gate then comprises an alternation of parallel first and second lines respectively of the first and second materials, the second material encapsulating the lines of the first material.

Abstract: A diblock copolymer layer comprising at least two polymers and having a lamellar structure perpendicularly to a substrate is deposited on a first gate insulator formed on the substrate. One of the polymers of the diblock copolymer layer is then eliminated to form parallel grooves in the copolymer layer. The grooves are filled by a first metallic or semi-conductor material and the rest of the copolymer layer is eliminated. A second dielectric material is deposited to form a second gate insulator. The second gate insulator of the floating gate then comprises an alternation of parallel first and second lines respectively of the first and second materials, the second material encapsulating the lines of the first material.