Abstract: A method and system of inspecting pre-molded parts comprising sealant material are disclosed. The method includes directing a micro-focused X-ray beam through a pre-molded sealant part comprising a sealant material to produce a phase-shifted refracted X-ray beam, and detecting the refracted X-ray beam with at least one phase contrast imaging X-ray detector to produce an image of the sealant material. The system includes at least one X-ray source structured and arranged to direct a micro-focused X-ray beam through a pre-molded sealant part comprising a sealant material to produce a phase-shifted refracted X-ray beam, and at least one phase contrast imaging X-ray detector structured and arranged to detect the refracted X-ray beam to produce an image of the sealant material.

Abstract: This disclosure is directed at a photoconductive element for a digital X-ray imaging system which consists of a detector element comprising at least one semiconducting layer for absorbing photons, a first electrode coupled to a surface of said semiconducting layer, a second electrode coupled to a surface of said semiconducting layer, wherein said first electrode and said second electrode are separated horizontally, and at least one of said electrodes is electrically isolated from said semiconducting layer by an insulating layer; a readout circuit element coupled to said detector element; and a dielectric layer between said detector element and said readout circuit element.

Abstract: This disclosure is directed at a photoconductive element for a digital X-ray imaging system which consists of a detector element comprising a semiconducting layer for absorbing photons, an insulator layer on at least one surface of said semiconducting layer and at least two electrodes on one surface of said insulator layer; and a switching element wherein at least one layer within said switching element is in the same plane as at least one said layer within said detector element.

Abstract: This disclosure is directed at a photoconductive element for a digital X-ray imaging system which consists of a detector element comprising at least one semiconducting layer for absorbing photons, a first electrode coupled to a surface of said semiconducting layer, a second electrode coupled to a surface of said semiconducting layer, wherein said first electrode and said second electrode are separated horizontally, and at least one of said electrodes is electrically isolated from said semiconducting layer by an insulating layer; a readout circuit element coupled to said detector element; and a dielectric layer between said detector element and said readout circuit element.

Abstract: This disclosure is directed at a photoconductive element for a digital X-ray imaging system which consists of a detector element comprising a semiconducting layer for absorbing photons, an insulator layer on at least one surface of said semiconducting layer and at least two electrodes on one surface of said insulator layer; and a switching element wherein at least one layer within said switching element is in the same plane as at least one said layer within said detector element.

Abstract: The present invention discloses structure of a two-gate field effect transistor (FET), named as charge gated FET, and presents various active pixel sensor (APS) and multimode architectures using the device which has only one, or two on-pixel transistors for high resolution, high gain and fast frame rate APS arrays. It is also disclosed a new method of addressing pixels of an APS array by applying the addressing voltage pulse directly to the gate of the amplifying transistor of the pixel architecture, eliminating the row select transistor from the pixel circuit.

Abstract: The disclosure is directed at a radiation detector comprising a substrate layer of detector material; a set of readout electronics deposited and integrated on one side of the substrate layer; and a contact layer deposited on a side of the substrate layer opposite the set of readout electronics.

Abstract: The present invention discloses structure of a two-gate field effect transistor (FET), named as charge gated FET, and presents various active pixel sensor (APS) and multimode architectures using the device which has only one, or two on-pixel transistors for high resolution, high gain and fast frame rate APS arrays. It is also disclosed a new method of addressing pixels of an APS array by applying the addressing voltage pulse directly to the gate of the amplifying transistor of the pixel architecture, eliminating the row select transistor from the pixel circuit.