Patents by Inventor Karim Segueni
Karim Segueni has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20160181041Abstract: The present invention relates to a method of manufacturing an MEMS device that comprises the steps of forming a first membrane layer over a sacrificial base layer, forming a second membrane layer over the first membrane layer, wherein the second membrane layer comprises lateral recesses exposing lateral portions of the first membrane layer and forming stoppers to restrict movement of the first membrane layer. Moreover, it is provided MEMS device comprising a movable membrane comprising a first membrane layer and a second membrane layer formed over the first membrane layer, wherein the second membrane layer comprises lateral recesses exposing lateral portions of the first membrane layer.Type: ApplicationFiled: December 21, 2015Publication date: June 23, 2016Inventors: Anne-Sophie Rollier, Antoine Bonnabel, Karim Segueni
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Publication number: 20160181040Abstract: Systems and methods for a MEMS device, in particular, a MEMS switch, and the manufacture thereof are provided. In one example, said MEMS device comprises posts and a conduction (transmission) line formed over a substrate and a membrane over the posts and the conduction line. The membrane comprises a first membrane layer and a second membrane layer formed over the first membrane layer in a region over one of the posts and/or a region over the conduction line such that the first membrane layer has a region where the second membrane layer is not formed adjacent to the region where the second membrane layer is formed.Type: ApplicationFiled: December 21, 2015Publication date: June 23, 2016Inventors: Renaud Robin, Nicolas Lorphelin, Karim Segueni
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Patent number: 8593239Abstract: The MEMS structure comprises: a flexible membrane (6), which has a main longitudinal axis (6a) defining a longitudinal direction (X), at least one pillar (3, 3?) under the flexible membrane (6), electric lowering actuation means (7) that are adapted to bend down the flexible membrane (6) into a down forced state electric raising actuation means (8) that are adapted to bend up the flexible membrane (6) into an up forced state. The electric lowering actuation means (7) or the electric raising actuation means (8) comprise an actuation area (7c or 8c), that extends under a part of the membrane (6) and that is adapted to exert pulling forces on the membrane (6) simultaneously on both sides of the said at least one pillar (3) in the longitudinal direction (X).Type: GrantFiled: March 18, 2010Date of Patent: November 26, 2013Assignee: DELFMEMSInventors: Karim Segueni, Nicolas Lorphelin
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Patent number: 8212324Abstract: A Micro Electro Mechanical Systems resonance device includes a substrate, and an input electrode, connected to an alternating current source having an input frequency. The device also includes an output electrode, and at least one anchoring structure, connected to the substrate. The device further includes a vibratile structure connected to an anchoring structure by at least one junction, having a natural acoustic resonant frequency. The vibration under the effect of the input electrode, when it is powered, generates, on the output electrode, an alternating current wherein the output frequency is equal to the natural frequency. The vibratile structure and/or the anchoring structure includes a periodic structure. The periodic structure includes at least first and second zones different from each other, and corresponding respectively to first and second acoustic propagation properties.Type: GrantFiled: April 6, 2009Date of Patent: July 3, 2012Assignee: STMicroelectronics SAInventors: Gregory Caruyer, Karim Segueni, Pascal Ancey, Bertrand Dubus
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Patent number: 8159109Abstract: A microresonator comprising a single-crystal silicon resonant element and at least one activation electrode placed close to the resonant element, in which the resonant element is placed in an opening of a semiconductor layer covering a substrate, the activation electrode being formed in the semiconductor layer and being level at the opening.Type: GrantFiled: August 4, 2010Date of Patent: April 17, 2012Assignees: STMicroelectronics (Crolles 2) SAS, STMicroelectronics S.A.Inventors: Nicolas Abelé, Pascal Ancey, Alexandre Talbot, Karim Segueni, Guillaume Bouche, Thomas Skotnicki, Stéphane Monfray, Fabrice Casset
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Publication number: 20110315529Abstract: The MEMS structure comprises: a flexible membrane (6), which has a main longitudinal axis (6a) defining a longitudinal direction (X), at least one pillar (3, 3?) under the flexible membrane (6), electric lowering actuation means (7) that are adapted to bend down the flexible membrane (6) into a down forced state electric raising actuation means (8) that are adapted to bend up the flexible membrane (6) into an up forced state. The electric lowering actuation means (7) or the electric raising actuation means (8) comprise an actuation area (7c or 8c), that extends under a part of the membrane (6) and that is adapted to exert pulling forces on the membrane (6) simultaneously on both sides of the said at least one pillar (3) in the longitudinal direction (X).Type: ApplicationFiled: March 18, 2010Publication date: December 29, 2011Applicant: DELFMEMSInventors: Karim Segueni, Nicolas Lorphelin
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Patent number: 7858407Abstract: A microresonator comprising a single-crystal silicon resonant element and at least one activation electrode placed close to the resonant element, in which the resonant element is placed in an opening of a semiconductor layer covering a substrate, the activation electrode being formed in the semiconductor layer and being level at the opening.Type: GrantFiled: November 6, 2008Date of Patent: December 28, 2010Inventors: Nicolas Abelé, Pascal Ancey, Alexandre Talbot, Karim Segueni, Guillaume Bouche, Thomas Skotnicki, Stéphane Monfray, Fabrice Casset
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Publication number: 20100295416Abstract: A microresonator comprising a single-crystal silicon resonant element and at least one activation electrode placed close to the resonant element, in which the resonant element is placed in an opening of a semiconductor layer covering a substrate, the activation electrode being formed in the semiconductor layer and being level at the opening.Type: ApplicationFiled: August 4, 2010Publication date: November 25, 2010Applicants: STMicroelectronics (Crolles 2) SAS, STMicroelectronics S.A.Inventors: Nicolas Abelé, Pascal Ancey, Alexandre Talbot, Karim Segueni, Guillaume Bouche, Thomas Skotnicki, Stéphane Monfray, Fabrice Casset
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Publication number: 20090289314Abstract: A Micro Electro Mechanical Systems resonance device includes a substrate, and an input electrode, connected to an alternating current source having an input frequency. The device also includes an output electrode, and at least one anchoring structure, connected to the substrate. The device further includes a vibratile structure connected to an anchoring structure by at least one junction, having a natural acoustic resonant frequency. The vibration under the effect of the input electrode, when it is powered, generates, on the output electrode, an alternating current wherein the output frequency is equal to the natural frequency. The vibratile structure and/or the anchoring structure includes a periodic structure. The periodic structure includes at least first and second zones different from each other, and corresponding respectively to first and second acoustic propagation properties.Type: ApplicationFiled: April 6, 2009Publication date: November 26, 2009Applicant: STMicroelectronics SAInventors: Gregory CARUYER, Karim Segueni, Pascal Ancey, Bertrand Dubus
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Publication number: 20090152998Abstract: A microresonator comprising a single-crystal silicon resonant element and at least one activation electrode placed close to the resonant element, in which the resonant element is placed in an opening of a semiconductor layer covering a substrate, the activation electrode being formed in the semiconductor layer and being level at the opening.Type: ApplicationFiled: November 6, 2008Publication date: June 18, 2009Applicants: STMicroelectronics (Crolles) 2 SAS, STMicroelectronics S.A., Commissariat A L'energie AtomiqueInventors: Nicolas Abele, Pascal Ancey, Alexandre Talbot, Karim Segueni, Guillaume Bouche, Thomas Skotnicki, Stephane Monfray, Fabrice Cassett
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Patent number: 7196451Abstract: An electromechanical resonator includes a monocrystalline-silicon substrate (S) provided with an active zone (ZA) delimited by an insulating region, a vibrating beam (10) anchored by at least one of its free ends on the insulating region and including a monocrystalline-silicon vibrating central part (12), and a control electrode (E) arranged above the beam and bearing on the active zone. The central part (12) of the beam is separated from the active zone (ZA) and from the control electrode (E).Type: GrantFiled: July 21, 2004Date of Patent: March 27, 2007Assignee: STMicroelectronics SAInventors: Stephane Monfray, Pascal Ancey, Thomas Skotnicki, Karim Segueni
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Publication number: 20070035200Abstract: A microelectromechanical system comprises a beam and an electrode coupled to the beam via electrostatic interaction. The beam is designed to undergo elastic flexural deformation and has an approximately constant cross section. The beam consists of several flat faces that extend over the length of the beam, each having a thickness of less than an external dimension of the cross section. A flexural vibration frequency of the beam is then increased compared with a solid beam of the same external dimensions. Such a microelectromechanical system is suitable for applications requiring very short transition times, or for producing high-frequency oscillators and resonators.Type: ApplicationFiled: March 23, 2006Publication date: February 15, 2007Applicants: STMicroelectronics S.A.Inventors: Fabrice Casset, Karim Segueni, Arnaud De Grave, Nicolas Abele
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Publication number: 20050199970Abstract: An electromechanical resonator includes a monocrystalline-silicon substrate (S) provided with an active zone (ZA) delimited by an insulating region, a vibrating beam (10) anchored by at least one of its free ends on the insulating region and including a monocrystalline-silicon vibrating central part (12), and a control electrode (E) arranged above the beam and bearing on the active zone. The central part (12) of the beam is separated from the active zone (ZA) and from the control electrode (E).Type: ApplicationFiled: July 21, 2004Publication date: September 15, 2005Applicant: STMICROELECTRONICS SAInventors: Stephane Monfray, Pascal Ancey, Thomas Skotnicki, Karim Segueni