Abstract: A vegetable cheese analogue has an oat base having dry matter in an amount of 2-8% by weight of the cheese analogue, a vegetable fat in an amount of 20-30% by weight of the cheese analogue, at least one starch in an amount of 20-30% by weight of the cheese analogue, at least one vegetable protein in an amount of 1-4% by weight of the cheese analogue, at least one stabilizer in an amount of 0.2-1% by weight of the cheese analogue, and water in an amount of 35-45% by weight of the cheese analogue.

Abstract: The present invention provides a method of gel-casting WC—Co cemented carbide powder, where the resulting gelled body can be of complex shape and has a high green density, a good homogeneity and sufficiently good mechanical properties for the gelled body to be demolded and dried without significant shape-distortions and cracking. The method relates to the forming of a gelled body through the gelling of an aqueous slurry of WC—Co cemented carbide powder with good dispersion characteristics, where the gelling is achieved by the temperature induced polymerization reaction between a monomer and a cross-linker, catalyzed by a free-radical initiator. By further subjecting the body to drying, heating, and sintering, a dense cemented carbide body is obtained.

Abstract: A method for producing vertical bipolar transistors having different voltage breakdown and high-frequency performance characteristics on a single die comprises forming, for each of the vertical bipolar transistors, a buried collector region, and base and emitter regions above the buried collector region. The lateral extensions and locations of the base and emitter regions and of the buried collector region are, for each of the vertical bipolar transistors, selected to create an overlap between the base and emitter regions, and the buried collector region, as seen from above, wherein at least some of the overlaps are selected to be different.

Abstract: The present invention relates to a method for the non-magnetic purification of cellular components from a crude cell lysate by continuous liquid chromatography, which method comprises lysis of cells in a vessel to provide a crude cell lysate; passing the crude cell lysate so obtained, without any intermediate clarification, over a chromatogra-phy column packed with a porous particulate chromatography matrix to adsorb target component(s), wherein the particle surfaces present immobilised nitrilotriacetic acid (NTA) ligands charged with metal ions; and recovering the target component(s) by elu-tion.

Abstract: The present invention provides a method of gel-casting WC—Co cemented carbide powder, where the resulting gelled body can be of complex shape and has a high green density, a good homogeneity and sufficiently good mechanical properties for the gelled body to be demolded and dried without significant shape-distortions and cracking. The method relates to the forming of a gelled body through the gelling of an aqueous slurry of WC—Co cemented carbide powder with good dispersion characteristics, where the gelling is achieved by the temperature induced polymerization reaction between a monomer and a cross-linker, catalyzed by a free-radical initiator. By further subjecting the body to drying, heating and sintering, a dense cemented carbide body is obtained.

Abstract: A method for producing vertical bipolar transistors having different voltage breakdown and high-frequency performance characteristics on a single die comprises forming, for each of the vertical bipolar transistors, a buried collector region, and base and emitter regions above the buried collector region. The lateral extensions and locations of the base and emitter regions and of the buried collector region are, for each of the vertical bipolar transistors, selected to create an overlap between the base and emitter regions, and the buried collector region, as seen from above, wherein at least some of the overlaps are selected to be different.

Abstract: A method to provide a triple well in an epitaxially based CMOS or B:CMOS process comprises the step of implanting the triple well prior to the epitaxial deposition.

Abstract: A method to provide a triple well in an epitaxially based CMOS or B:CMOS process comprises the step of implanting the triple well prior to the epitaxial deposition.

Abstract: A manufacturing method for semiconductor components is disclosed which will allow better precision in the definition of the doped areas of the components and the separation of differently doped areas. A selectively shaped area of, for example, polysilicon, defining the area or areas to be doped, is deposited on the component before the masks are applied. This makes the fitting of the masks less critical, as they only have to be fitted within the area of the polysilicon layer. In this way an accuracy of 0.1 .mu.m or better can be achieved.

Abstract: A manufacturing method for semiconductor components is disclosed which will allow better precision in the definition of the doped areas of the components and the separation of differently doped areas. A selectively shaped area of, for example, polysilicon, defining the area or areas to be doped, is deposited on the component before masks are applied. This makes the positioning of masks less critical because they only have to be positioned within the area of the polysilicon layer. In this way, an accuracy of 0.1 .mu.m or better can be achieved.