Abstract: A method of treating a silicon surface of a substrate that includes heating the substrate in a process chamber to a temperature, exposing a first area adjacent to the silicon surface to a first gas mixture comprising an etchant, a silicon source gas, and a carrier, exposing a second area adjacent to the silicon surface to a second gas mixture, wherein the second gas mixture is different from the first gas mixture.

Abstract: A method of treating a silicon surface of a substrate that includes heating the substrate in a process chamber to a temperature, exposing a first area adjacent to the silicon surface to a first gas mixture comprising an etchant, a silicon source gas, and a carrier, exposing a second area adjacent to the silicon surface to a second gas mixture, wherein the second gas mixture is different from the first gas mixture.

Abstract: A fluid delivery system for providing fluids to a substrate processing system. The fluid delivery system may include a first manifold having a first inlet, a first outlet, and a second outlet, wherein the first outlet and the second outlet are coupled to the substrate processing system. The fluid delivery system mat further include a first conduit for coupling a first fluid to the first inlet and a flow controller for controlling the flow of the first fluid through the first conduit. The fluid delivery system may also include a computer controlled metering valve coupled to the first outlet.