Abstract: Embodiments described herein provide methods of forming amorphous or nano-crystalline ceramic films. The methods include depositing a ceramic layer on a substrate using a physical vapor deposition (PVD) process, discontinuing the PVD process when the ceramic layer has a predetermined layer thickness, sputter etching the ceramic layer for a predetermined period of time, and repeating the depositing the ceramic layer using the PVD process, the discontinuing the PVD process, and the sputter etching the ceramic layer until a ceramic film with a predetermined film thickness is formed.

Abstract: Implementations described herein generally relate to metal electrodes, more specifically lithium-containing anodes, high performance electrochemical devices, such as secondary batteries, including the aforementioned lithium-containing electrodes, and methods for fabricating the same. In one implementation, an anode electrode structure is provided. The anode electrode structure comprises a current collector comprising copper. The anode electrode structure further comprises a lithium metal film formed on the current collector. The anode electrode structure further comprises a solid electrolyte interface (SEI) film stack formed on the lithium metal film. The SEI film stack comprises a chalcogenide film formed on the lithium metal film. In one implementation, the SEI film stack further comprises a lithium oxide film formed on the chalcogenide film. In one implementation, the SEI film stack further comprises a lithium carbonate film formed on the lithium oxide film.

Abstract: Embodiments described herein provide methods of forming amorphous or nano-crystalline ceramic films. The methods include depositing a ceramic layer on a substrate using a physical vapor deposition (PVD) process, discontinuing the PVD process when the ceramic layer has a predetermined layer thickness, sputter etching the ceramic layer for a predetermined period of time, and repeating the depositing the ceramic layer using the PVD process, the discontinuing the PVD process, and the sputter etching the ceramic layer until a ceramic film with a predetermined film thickness is formed.

Abstract: Implementations described herein generally relate to metal electrodes, more specifically lithium-containing anodes, high performance electrochemical devices, such as secondary batteries, including the aforementioned lithium-containing electrodes, and methods for fabricating the same. In one implementation, an anode electrode structure is provided. The anode electrode structure comprises a current collector comprising copper. The anode electrode structure further comprises a lithium metal film formed on the current collector. The anode electrode structure further comprises a solid electrolyte interface (SEI) film stack formed on the lithium metal film. The SEI film stack comprises a chalcogenide film formed on the lithium metal film. In one implementation, the SEI film stack further comprises a lithium oxide film formed on the chalcogenide film. In one implementation, the SEI film stack further comprises a lithium carbonate film formed on the lithium oxide film.

Abstract: Apparatus for coupling a hot wire source to a process chamber is provided herein. In some embodiments, an apparatus for coupling a hot wire source to a process chamber may include: a housing having an open end and a through hole formed through a top and a bottom of the housing; and a filament assembly configured to be disposed within the housing, the filament assembly having a frame and a plurality of filaments disposed across the frame, wherein the plurality of filaments of the filament assembly are substantially parallel with the top and the bottom of the housing and at least a portion of the plurality of filaments are disposed within the through hole of the housing when the filament assembly is disposed within the housing.

Abstract: Apparatus for coupling a hot wire source to a process chamber is provided herein. In some embodiments, an apparatus for coupling a hot wire source to a process chamber may include: a housing having an open end and a through hole formed through a top and a bottom of the housing; and a filament assembly configured to be disposed within the housing, the filament assembly having a frame and a plurality of filaments disposed across the frame, wherein the plurality of filaments of the filament assembly are substantially parallel with the top and the bottom of the housing and at least a portion of the plurality of filaments are disposed within the through hole of the housing when the filament assembly is disposed within the housing.

Abstract: A pump assembly for circulating water in an evaporative cooler is provided. The pump assembly may include a housing which defines a cavity. The pump assembly may also include an impeller received in the cavity of the housing. Further, the pump assembly may include a rod which may be operatively associated with the impeller and extends out of the housing. Moreover, the pump assembly may include a connecting member which is operatively associated with the rod, and may be adapted to be operatively associated with a shaft of a fan assembly incorporated into the evaporative cooler. The connecting member may be adapted to transmit rotary motion of the shaft to the impeller, thereby enabling the pump assembly to circulate water in the evaporative cooler.

Abstract: A method of sputter depositing dielectric thin films may comprise: providing a substrate on a substrate pedestal in a process chamber, the substrate being positioned facing a sputter target; simultaneously applying a first RF frequency from a first power supply and a second RF frequency from a second power supply to the sputter target; and forming a plasma in the process chamber between the substrate and the sputter target, for sputtering the target; wherein the first RF frequency is less than the second RF frequency, the first RF frequency is chosen to control the ion energy of the plasma and the second RF frequency is chosen to control the ion density of the plasma. The self-bias of surfaces within said process chamber may be selected; this is enabled by connecting a blocking capacitor between the substrate pedestal and ground.

Abstract: A pump assembly for circulating water in an evaporative cooler is provided. The pump assembly may include a housing which defines a cavity. The pump assembly may also include an impeller received in the cavity of the housing. Further, the pump assembly may include a rod which may be operatively associated with the impeller and extends out of the housing. Moreover, the pump assembly may include a connecting member which is operatively associated with the rod, and may be adapted to be operatively associated with a shaft of a fan assembly incorporated into the evaporative cooler. The connecting member may be adapted to transmit rotary motion of the shaft to the impeller, thereby enabling the pump assembly to circulate water in the evaporative cooler.

Abstract: A method and apparatus for analyzing and comparing in real-time the presence of contaminants in a semiconductor substrate processing system. The analysis is made and compared against a statistical baseline of data points established from the analysis of acceptable substrates undergoing the same procedure. A decision can then be made as to whether to remove the wafers for reprocessing. The comparison is to be made not only with the above baseline, but also in accordance with process dependent information provided by a supplemental data port in the processing tool. Thus, the baseline is dynamic and not a static, pre-determined figure.