Abstract: On-chip integrated detector for analyzing fluids, comprising insulating material partly enclosing a cavity for accommodating an analyte, said cavity being defined at the bottom and at least partly at its sides by said insulating material, and a gateless field effect transistor (FET) formed in a distance from the bottom of the cavity, the sensing surface of which is facing the analyte.

Abstract: A semiconductor component, selected from the group comprising a photodetector, a light emitting diode, an optical modulator and a waveguide. The semiconductor component comprises an Si substrate, an active region formed on said substrate, and an Si capping layer on said active region. In one embodiment the active region is a superlattice comprising alternating layers of Si1-yCy and Si1-x-yGexCy, with the atomic fraction y of the Si1-x-yGexCy layers being equal to or different from the atomic fraction y of the Si1-yCy layers. In another embodiment it is a superlattice comprising a plurality of periods of a three-layer structure comprising Si, Si1-yCy and Si1-xGex layers. In a third embodiment it is a superlattice comprising a plurality of periods of a three-layer structure comprising Si, Si1-yCy and Si1-x-yGexCy layers, with the atomic fraction y of the Si1-x-yGexCy layers being equal to or different from the atomic fraction y of the Si1-yCy layers.

Abstract: Semiconductor structure for a transistor, having at least one doped crystalline semiconductor layer (3) consisting of a semiconductor material such as silicon or germanium which is applied onto a further crystalline layer, wherein the doped semiconductor layer (3) contains carbon alloyed with this semiconductor material to improve the conduction characteristics, and wherein a desired strain can be set in the active semiconductor layer (3) via the proportion of carbon relation to the semiconductor material.

Abstract: A system for applying insulating tape to a three-dimensionally curved conductor, particularly of the type used in high voltage applications. A wrapping ring having an axis of rotation is oriented with respect to the conductor such that the axis of rotation is always placed on the spinning point of the insulating tape, the spinning point being at the location where the tape tangentially contacts the conductor during wrapping. Such an orientation of the wrapping ring avoids the formation of pockets at the curved places of the conductor.