Patents by Inventor Karl Dohnke

Karl Dohnke has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor structure with a switch element and an edge element
    Patent number: 7071503
    Abstract: A semi-conductor structure for controlling and switching a current has a switch element and an edge element. The switch element contains a first semi-conductor area of a first conductivity type contacted by way of an anode electrode and a cathode electrode, a depletion area that is arranged inside the first semi-conductor area and that can be influenced by a control voltage applied to the control electrode for the purpose of current control, and an island area of a second conductivity type that is buried inside the first semi-conductor area. The edge element contains an edge area of the second conductivity type that is buried inside the first semi-conductive area and that is formed on a common level with the buried island area, in addition to an edge terminating area of a second conductivity type adjacent the edge area.
    Type: Grant
    Filed: September 24, 2004
    Date of Patent: July 4, 2006
    Assignee: SiCED Electronics Development GmbH & Co. KG
    Inventors: Karl Dohnke, Rudolf Elpelt, Peter Friedrichs, Heinz Mitlehner, Reinhold Schörner
  • Semiconductor structure with a switch element and an edge element
    Publication number: 20050062112
    Abstract: A semi-conductor structure for controlling and switching a current has a switch element and an edge element. The switch element contains a first semi-conductor area of a first conductivity type contacted by way of an anode electrode and a cathode electrode, a depletion area that is arranged inside the first semi-conductor area and that can be influenced by a control voltage applied to the control electrode for the purpose of current control, and an island area of a second conductivity type that is buried inside the first semi-conductor area. The edge element contains an edge area of the second conductivity type that is buried inside the first semi-conductive area and that is formed on a common level with the buried island area, in addition to an edge terminating area of a second conductivity type adjacent the edge area.
    Type: Application
    Filed: September 24, 2004
    Publication date: March 24, 2005
    Inventors: Karl Dohnke, Rudolf Elpelt, Peter Friedrichs, Heinz Mitlehner, Reinhold Schorner