Abstract: Provided are methods of bonding a fluoroelastomer to a metal substrate; fluoropolymer compounds comprising a fluoroelastomer, a curing agent and a bonding promoter; and composite materials obtained by curing the compound. Further provided is the use of bonding promoters for increasing the bond strength between a fluoroelastomer and a metal substrate.

Abstract: Provided are methods of bonding a fluoroelastomer to a metal substrate; fluoropolymer compounds comprising a fluoroelastomer, a curing agent and a bonding promoter; and composite materials obtained by curing the compound. Further provided is the use of bonding promoters for increasing the bond strength between a fluoroelastomer and a metal substrate.

Abstract: The semiconductor laser has a resonator end face (15) and a semiconductor superlattice (16) which is applied to the resonator end face (15). The semiconductor superlattice (16) acts as a passivation layer for the resonator end face (15) and has a number of layers (16.1, 16.2, 16.3, 16.3), the material compositions of which are selected in such a manner that essentially no light is absorbed at the emission wavelength of the semiconductor laser (13), the layer assembly suppresses charge carrier transport from the active layer to the surface of the outermost layer (16.4) and good lattice adaption of the semiconductor superlattice (16) to the semiconductor laser is made possible at the same time.

Abstract: Field-Effect Transistor Based on Embedded Cluster Structures and Process for Its Production In field-effect transistors, semiconductor clusters, which can extend from the source region to the drain region and which can be implemented in two ways, are embedded in one or a plurality of layers. In a first embodiment, the semiconductor material of the adjacent channel region can be strained by the clusters and the effective mass can thus be reduced by altering the energy band structure and the charge carrier mobility can be increased. In a second embodiment, the clusters themselves can be used as a canal region. These two embodiments can also appear in mixed forms. The invention can be applied to the Si material system with SiGe clusters or to the GaAs material system with InGaAs clusters or to other material systems.

Abstract: The temperature coupling of crucible (4) of an effusion cell to a receiving part (1) that surrounds the crucible (4) and serves as a heating-equipped cooling reservoir is improved by inserting, in the space (2) between the crucible (4) and the wall of a recess (1A) in the receiving part (1), a conducting medium with high heat conductivity and low vapor pressure (e.g. Ga, In, Hg or a soft solid). As a result of the improved thermal coupling of crucible (4), the temperature of the crucible (4) follows more rapidly that of the heating-equipped cooling reservoir, such that materials with high vapor pressure and relatively low evaporation temperatures can be deposited under greater control.

Abstract: Field-Effect Transistor Based on Embedded Cluster Structures and Process for Its Production In field-effect transistors, semiconductor clusters, which can extend from the source region to the drain region and which can be implemented in two ways, are embedded in one or a plurality of layers. In a first embodiment, the semiconductor material of the adjacent channel region can be strained by the clusters and the effective mass can thus be reduced by altering the energy band structure and the charge carrier mobility can be increased. In a second embodiment, the clusters themselves can be used as a canal region. These two embodiments can also appear in mixed forms. The invention can be applied to the Si material system with SiGe clusters or to the GaAs material system with InGaAs clusters or to other material systems.

Abstract: In field-effect transistors, semiconductor clusters, which can extend from the source region to the drain region and which can be implemented in two ways, are embedded in one or a plurality of layers. In a first embodiment, the semiconductor material of the adjacent channel region can be strained by the clusters and the effective mass can thus be reduced by altering the energy band structure and the charge carrier mobility can be increased. In a second embodiment, the clusters themselves can be used as a canal region. These two embodiments can also appear in mixed forms. The invention can be applied to the Si material system with SiGe clusters or to the GaAs material system with InGaAs clusters or to other material systems.

Abstract: A semiconductor component, selected from the group comprising a photodetector, a light emitting diode, an optical modulator and a waveguide. The semiconductor component comprises an Si substrate, an active region formed on said substrate, and an Si capping layer on said active region. In one embodiment the active region is a superlattice comprising alternating layers of Si1-yCy and Si1-x-yGexCy, with the atomic fraction y of the Si1-x-yGexCy layers being equal to or different from the atomic fraction y of the Si1-yCy layers. In another embodiment it is a superlattice comprising a plurality of periods of a three-layer structure comprising Si, Si1-yCy and Si1-xGex layers. In a third embodiment it is a superlattice comprising a plurality of periods of a three-layer structure comprising Si, Si1-yCy and Si1-x-yGexCy layers, with the atomic fraction y of the Si1-x-yGexCy layers being equal to or different from the atomic fraction y of the Si1-yCy layers.

Abstract: In field-effect transistors, semiconductor clusters, which can extend from the source region to the drain region and which can be implemented in two ways, are embedded in one or a plurality of layers. In a first embodiment, the semiconductor material of the adjacent channel region can be strained by the clusters and the effective mass can thus be reduced by altering the energy band structure and the charge carrier mobility can be increased. In a second embodiment, the clusters themselves can be used as a canal region. These two embodiments can also appear in mixed forms. The invention can be applied to the Si material system with SiGe clusters or to the GaAs material system with InGaAs clusters or to other material systems.

Abstract: A method of manufacturing quantum structures, in particular quantum dots and tunnel barriers and also a component with such quantum structures wherein in that a substrate is structured by the intentional formation of trenches so that material remains between oppositely disposed trench sections, with a transition from a broader region to a narrower region; wherein further material is deposited onto the substrate so that differential growth sets in on the remaining regions of the substrate and an inclined surface arises in the transition region between the broader region and the narrower region and a material height increase arises in the narrower region relative to the broader region; and wherein a different material, or a material of different conductivity, is subsequently deposited, whereby a tunnel barrier arises on the inclined surface and/or a quantum dot arises at the upper end of the inclined surface.

Abstract: Semiconductor structure for a transistor, having at least one doped crystalline semiconductor layer (3) consisting of a semiconductor material such as silicon or germanium which is applied onto a further crystalline layer, wherein the doped semiconductor layer (3) contains carbon alloyed with this semiconductor material to improve the conduction characteristics, and wherein a desired strain can be set in the active semiconductor layer (3) via the proportion of carbon relation to the semiconductor material.

Abstract: The joint agglomeration of PTFE and metal-containing fillers belonging to the group comprising copper, tin and alloys thereof with one another and with other metals is improved if an alkylsulfate or an alkanesulfonate having 10 to 18 carbon atoms is added to the liquid agglomeration medium.

Abstract: A process is described for preparing vinyl chloride polymers. The polymerization is carried out in an apparatus the inside walls and internal fitments of which have been coated with a reaction product which forms on reacting certain silanes with inhibitors for free-radical polymerizations and which contain in the molecule at least one aromatic or at least one quinonoid ring and at least one hydrogen atom which is bonded to an oxygen, sulfur or nitrogen atom with subsequent reaction with water, drying and heat treatment.The wall-deposit formation observed with the new process is markedly smaller, in particular after several polymerization batches, than in the case of known processes.