Patents by Inventor Karl Engl
Karl Engl has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20190155564Abstract: An arrangement includes at least two modules for a video wall including light-emitting components arranged on a carrier, wherein a drive circuit that selectively drives the component at the carrier is provided for each component, row lines and column lines are provided, each drive circuit connects to a row line and a column line, each drive circuit connects to power supply lines, the carrier includes plated-through holes that guide the row lines and the column lines onto an underside of the carrier, the two modules are arranged on a further carrier, the further carrier includes at least one recess, an electrical connector is arranged in the recess, and the electrical connector connects column lines and/or row lines of the two modules to one another.Type: ApplicationFiled: June 30, 2017Publication date: May 23, 2019Inventors: Thomas Schwarz, Frank Singer, Jürgen Moosburger, Karl Engl, Alexander Martin
-
Publication number: 20190044031Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a semiconductor body of semiconductor material, a p-contact layer and an n-contact layer. The semiconductor body includes an active layer intended for generating radiation. The semiconductor body includes a p-side and an n-side, between which the active layer is arranged. The p-contact layer is intended for electrical contacting the p-side. The n-contact layer is intended for electrical contacting the n-side 1b. The n-contact layer contains a TCO layer and a mirror layer, the TCO-layer being arranged between the n-side of the semiconductor body and the mirror layer.Type: ApplicationFiled: October 9, 2018Publication date: February 7, 2019Inventors: Markus Maute, Karl Engl, Sebastian Taeger, Robert Walter, Johannes Stocker
-
Patent number: 10164143Abstract: An optoelectronic semiconductor chip has a semiconductor body and a substrate on which the semiconductor body is disposed. The semiconductor body has an active region disposed between a first semiconductor layer of a first conductor type and a second semiconductor layer of a second conductor type. The first semiconductor layer is disposed on the side of the active region facing the substrate. The first semiconductor layer is electrically conductively connected to a first termination layer that is disposed between the substrate and the semiconductor body. An encapsulation layer is disposed between the first termination layer and the substrate and, in plan view of the semiconductor chip, projects at least in some regions over a side face which delimits the semiconductor body.Type: GrantFiled: July 27, 2017Date of Patent: December 25, 2018Assignee: OSRAM Opto Semiconductors GmbHInventors: Karl Engl, Markus Maute, Stefanie Rammelsberger, Anna Kasprzak-Zablocka
-
Patent number: 10121775Abstract: Described is an optoelectronic semiconductor chip (1) with a built-in bridging element (9, 9A) for overvoltage protection.Type: GrantFiled: November 7, 2014Date of Patent: November 6, 2018Assignee: OSRAM Opto Semiconductors GmbHInventors: Christian Leirer, Berthold Hahn, Karl Engl, Johannes Baur, Siegfried Herrmann, Andreas Ploessl, Simeon Katz, Tobias Meyer, Lorenzo Zini, Markus Maute
-
Patent number: 10115867Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a semiconductor body of semiconductor material, a p-contact layer and an n-contact layer. The semiconductor body includes an active layer intended for generating radiation. The semiconductor body includes a p-side and an n-side, between which the active layer is arranged. The p-contact layer is intended for electrical contacting the p-side. The n-contact layer is intended for electrical contacting the n-side 1b. The n-contact layer contains a TCO layer and a mirror layer, the TCO-layer being arranged between the n-side of the semiconductor body and the mirror layer.Type: GrantFiled: July 14, 2017Date of Patent: October 30, 2018Assignee: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Markus Maute, Karl Engl, Sebastian Taeger, Robert Walter, Johannes Stocker
-
Patent number: 10043958Abstract: A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side and a mirror layer at least in regions at a rear side situated opposite the radiation exit area, a protective layer is arranged on the mirror layer, the protective layer includes a transparent conductive oxide, the mirror layer adjoins the semiconductor layer sequence at an interface situated opposite the protective layer, first and second layers, the first and second electrical connection layers face the rear side of the semiconductor layer sequence and are electrically insulated from one another, and a partial region of the second electrical connection layer extends from the rear side of the semiconductor layer sequence through at least one perforation of the active layer in a direction toward the front side.Type: GrantFiled: January 10, 2017Date of Patent: August 7, 2018Assignee: OSRAM Opto Semiconductors GmbHInventors: Korbinian Perzlmaier, Kai Gehrke, Robert Walter, Karl Engl, Guido Weiss, Markus Maute, Stefanie Rammelsberger
-
Patent number: 10014444Abstract: An optoelectronic semi-conductor chip is disclosed in which an encapsulation layer, which is an ALD layer, completely covers a first mirror layer on the side thereof facing away from a p-conductive region, and is arranged to be in direct contact with said first mirror layer in some sections.Type: GrantFiled: June 25, 2014Date of Patent: July 3, 2018Assignee: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Karl Engl, Georg Hartung, Johann Eibl, Michael Huber, Markus Maute
-
Patent number: 10008649Abstract: A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side and a mirror layer at least in regions at a rear side situated opposite the radiation exit area, a protective layer is arranged on the mirror layer, the protective layer includes a transparent conductive oxide, the mirror layer adjoins the semiconductor layer sequence at an interface situated opposite the protective layer, first and second layers, the first and second electrical connection layers face the rear side of the semiconductor layer sequence and are electrically insulated from one another, and a partial region of the second electrical connection layer extends from the rear side of the semiconductor layer sequence through at least one perforation of the active layer in a direction toward the front side.Type: GrantFiled: January 10, 2017Date of Patent: June 26, 2018Assignee: OSRAM Opto Semiconductors GmbHInventors: Korbinian Perzlmaier, Kai Gehrke, Robert Walter, Karl Engl, Guido Weiss, Markus Maute, Stefanie Rammelsberger
-
Patent number: 9997671Abstract: A composite substrate has a carrier and a utility layer. The utility layer is attached to the carrier by means of a dielectric bonding layer and the carrier contains a radiation conversion material. Other embodiments relate to a semiconductor chip having such a composite substrate, a method for producing a composite substrate and a method for producing a semiconductor chip with a composite substrate.Type: GrantFiled: June 15, 2015Date of Patent: June 12, 2018Assignee: OSRAM Opto Semiconductors GmbHInventors: Johannes Baur, Berthold Hahn, Volker Haerle, Karl Engl, Joachim Hertkorn, Tetsuya Taki
-
Patent number: 9917229Abstract: An electrical contact structure (10) for a semiconductor component (100) is specified, comprising a transparent electrically conductive contact layer (1), on which a first metallic contact layer (2) is applied, a second metallic contact layer (3), which completely covers the first metallic contact layer (2), and a separating layer (4), which is arranged between the transparent electrically conductive contact layer (1) and the second metallic contact layer (3) and which separates the second metallic contact layer (3) from the transparent electrically conductive contact layer (1). Furthermore, a semiconductor component (100) comprising a contact structure (10) is specified.Type: GrantFiled: May 22, 2015Date of Patent: March 13, 2018Assignee: OSRAM Opto Semiconductors GmbHInventors: Korbinian Perzlmaier, Bjoern Muermann, Karl Engl, Christian Eichinger
-
Patent number: 9853018Abstract: An optoelectronic semiconductor chip includes a semiconductor layer sequence. The semiconductor layer sequence includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and an active zone having a p-n junction, which active zone is formed between the first semiconductor region and the second semiconductor region. The semiconductor layer sequence is arranged on a carrier. The semiconductor chip also includes a first contact, which is provided for electrically connecting the first semiconductor region, and a second contact, which is different from the first contact and which is provided for electrically connecting the second semiconductor region. In addition, the semiconductor chip includes a first capacitive electrical element, which is connected in parallel with the p-n junction and which has a first dielectric element.Type: GrantFiled: September 10, 2014Date of Patent: December 26, 2017Assignee: OSRAM Opto Semiconductors GmbHInventors: Christian Leirer, Berthold Hahn, Roland Zeisel, Johannes Baur, Karl Engl
-
Publication number: 20170324000Abstract: An optoelectronic semiconductor chip has a semiconductor body and a substrate on which the semiconductor body is disposed. The semiconductor body has an active region disposed between a first semiconductor layer of a first conductor type and a second semiconductor layer of a second conductor type. The first semiconductor layer is disposed on the side of the active region facing the substrate. The first semiconductor layer is electrically conductively connected to a first termination layer that is disposed between the substrate and the semiconductor body. An encapsulation layer is disposed between the first termination layer and the substrate and, in plan view of the semiconductor chip, projects at least in some regions over a side face which delimits the semiconductor body.Type: ApplicationFiled: July 27, 2017Publication date: November 9, 2017Inventors: Karl Engl, Markus Maute, Stefanie Rammelsberger, Anna Kasprzak-Zablocka
-
Publication number: 20170317240Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a semiconductor body of semiconductor material, a p-contact layer and an n-contact layer. The semiconductor body includes an active layer intended for generating radiation. The semiconductor body includes a p-side and an n-side, between which the active layer is arranged. The p-contact layer is intended for electrical contacting the p-side. The n-contact layer is intended for electrical contacting the n-side 1b. The n-contact layer contains a TCO layer and a mirror layer, the TCO-layer being arranged between the n-side of the semiconductor body and the mirror layer.Type: ApplicationFiled: July 14, 2017Publication date: November 2, 2017Inventors: Markus Maute, Karl Engl, Sebastian Taeger, Robert Walter, Johannes Stocker
-
Patent number: 9761770Abstract: An optoelectronic semiconductor chip includes a semiconductor body with an active region provided for generating electromagnetic radiation, a first mirror layer provided for reflecting the electromagnetic radiation, a first encapsulation layer formed with an electrically insulating material, and a carrier provided for mechanically supporting the first encapsulation layer, the first mirror layer and the semiconductor body. The first mirror layer is arranged between the carrier and the semiconductor body. The first encapsulation layer is arranged between the carrier and the first mirror layer. The first encapsulation layer is an ALD layer.Type: GrantFiled: January 14, 2014Date of Patent: September 12, 2017Assignee: OSRAM Opto Semiconductors GmbHInventors: Johann Eibl, Sebastian Taeger, Lutz Höppel, Karl Engl, Stefanie Rammelsberger, Markus Maute, Michael Huber, Rainer Hartmann, Georg Hartung
-
Patent number: 9741902Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a semiconductor body of semiconductor material, a p-contact layer and an n-contact layer. The semiconductor body includes an active layer intended for generating radiation. The semiconductor body includes a p-side and an n-side, between which the active layer is arranged. The p-contact layer is intended for electrical contacting the p-side. The n-contact layer is intended for electrical contacting the n-side 1b. The n-contact layer contains a TCO layer and a mirror layer, the TCO-layer being arranged between the n-side of the semiconductor body and the mirror layer.Type: GrantFiled: May 17, 2016Date of Patent: August 22, 2017Assignee: OSRAM Opto Semiconductors GmbHInventors: Markus Maute, Karl Engl, Sebastian Taeger, Robert Walter, Johannes Stocker
-
Patent number: 9722136Abstract: An optoelectronic semiconductor chip has a semiconductor body and a substrate on which the semiconductor body is disposed. The semiconductor body has an active region disposed between a first semiconductor layer of a first conductor type and a second semiconductor layer of a second conductor type. The first semiconductor layer is disposed on the side of the active region facing the substrate. The first semiconductor layer is electrically conductively connected to a first termination layer that is disposed between the substrate and the semiconductor body. An encapsulation layer is disposed between the first termination layer and the substrate and, in plan view of the semiconductor chip, projects at least in some regions over a side face which delimits the semiconductor body.Type: GrantFiled: April 14, 2016Date of Patent: August 1, 2017Assignee: OSRAM Opto Semiconductors GmbHInventors: Karl Engl, Markus Maute, Stefanie Rammelsberger, Anna Kasprzak-Zablocka
-
Publication number: 20170200860Abstract: An electrical contact structure (10) for a semiconductor component (100) is specified, comprising a transparent electrically conductive contact layer (1), on which a first metallic contact layer (2) is applied, a second metallic contact layer (3), which completely covers the first metallic contact layer (2), and a separating layer (4), which is arranged between the transparent electrically conductive contact layer (1) and the second metallic contact layer (3) and which separates the second metallic contact layer (3) from the transparent electrically conductive contact layer (1). Furthermore, a semiconductor component (100) comprising a contact structure (10) is specified.Type: ApplicationFiled: May 22, 2015Publication date: July 13, 2017Inventors: Korbinian PERZLMAIER, Bjoern MUERMANN, Karl ENGL, Christian EICHINGER
-
Publication number: 20170148962Abstract: A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side and a mirror layer at least in regions at a rear side situated opposite the radiation exit area, a protective layer is arranged on the mirror layer, the protective layer includes a transparent conductive oxide, the mirror layer adjoins the semiconductor layer sequence at an interface situated opposite the protective layer, first and second layers, the first and second electrical connection layers face the rear side of the semiconductor layer sequence and are electrically insulated from one another, and a partial region of the second electrical connection layer extends from the rear side of the semiconductor layer sequence through at least one perforation of the active layer in a direction toward the front side.Type: ApplicationFiled: January 10, 2017Publication date: May 25, 2017Inventors: Korbinian Perzlmaier, Kai Gehrke, Robert Walter, Karl Engl, Guido Weiss, Markus Maute, Stefanie Rammelsberger
-
Patent number: 9647174Abstract: An optoelectronic semiconductor chip includes a semiconductor layer sequence having an active layer that generates radiation and at least one n-doped layer adjoining the active layer, the semiconductor layer sequence is based on AlInGaN or on InGaN, one or a plurality of central layers composed of AlGaN each having thicknesses of 25 nm to 200 nm are grown at a side of the n-doped layer facing away from a carrier substrate, a coalescence layer of doped or undoped GaN having a thickness of 300 nm to 1.2 ?m is formed at a side of the central layer or one of the central layers facing away from the carrier substrate, a roughening extends from the coalescence layer as far as or into the n-doped layer, a radiation exit area of the semiconductor layer stack is formed partly by the coalescence layer, and the central layer is exposed in places.Type: GrantFiled: April 14, 2016Date of Patent: May 9, 2017Assignee: OSRAM Opto Semiconductors GmbHInventors: Joachim Hertkorn, Karl Engl, Berthold Hahn, Andreas Weimar
-
Patent number: 9620680Abstract: An optoelectronic semiconductor body for emitting electromagnetic radiation from the front side with a semiconductor layer sequence and a first electrical contact layer, wherein the semiconductor layer sequence comprises at least one opening that penetrates fully through the semiconductor layer sequence in the direction from the front side to the rear side that is opposite the front side, the first electrical contact layer is arranged at the rear of the semiconductor body, a section of the first electrical contact layer extends from the rear side through the opening to the front side and covers a first sub-region of a front-side main face of the semiconductor layer sequence, and a second sub-region of the front-side main face is not covered by the first electrical contact layer.Type: GrantFiled: September 30, 2009Date of Patent: April 11, 2017Assignee: OSRAM Opto Semiconductors GmbHInventors: Karl Engl, Matthias Sabathil